Showing papers on "Antimonide published in 1996"
TL;DR: In this paper, the product distribution of an antimony cracking effusion cell has been characterized using a time-of-flight mass spectrometer employing resonanceenhanced laser ionization.
Abstract: The product distribution of an antimony cracking effusion cell has been characterized using a time‐of‐flight mass spectrometer employing resonance‐enhanced laser ionization. Source operating conditions have been identified under which predominately tetramers, dimers, and monomers of antimony are produced. Molecular beam epitaxy experiments employing the characterized antimony source for the growth of antimonide/arsenide superlattices and GaSb epilayers show that significant improvements in material quality can be obtained using monomeric antimony over that using molecular antimony species. A comparison of the surface chemistry of atomic and diatomic antimony species in the growth of several Sb‐containing semiconductors will be presented.
53 citations
20 citations
TL;DR: The reaction between GaCl3 and Sb(SiMe3)3 in a 1:1 mole ratio at 110°C in toluene leads to gallium antimonide, GaSb, which has been characterised by electron diffraction studies and EDX and elemental analyses as discussed by the authors.
Abstract: The reaction between GaCl3 and Sb(SiMe3)3 in a 1:1 mole ratio at 110°C in toluene leads to gallium antimonide, GaSb, which has been characterised by electron diffraction studies and EDX and elemental analyses. Microscopy studies (SEM and TEM) show the formation of nanocrystals with a predominant crystal size of 20–30 nm.
15 citations
TL;DR: In this paper, a defect and substitution variant of the binary silicide V 5 Si 3 with W 4 Si 3 -type structure, V 4 SiSb 2, was described.
13 citations
TL;DR: The formation of Mg2Si(100), ao= 6.39A, on Si(100) substrates has been investigated in this article, where Mg was first evaporated onto Si( 100) surfaces and Mg 2Si (100) films were formed in a subsequent annealing process.
Abstract: The formation of Mg2Si(100), ao= 6.39A, on Si(100) substrates has been investigated. Mg was first evaporated onto Si(100) surfaces and Mg2Si (100) films were formed in a subsequent annealing process. The Mg2Si layers were characterized by x-ray diffraction and transmission electron microscopy analysis. Optical and scanning electron microscopy analysis show the surface morphology to be smooth. The films are stable under thermal cycling and exhibit low resistivity. Epitaxial films of Mg2Si on Si(100) could be an ideal substrate for mercury cadmium telluride and antimonide based III-V semiconductor for mid-infrared devices because of its close lattice matching (the lattice misfit factor is less than 1.5%).
13 citations
TL;DR: In this article, a magnetic structure with a easy axis and two types of uranium sites having different values of the moment was found for both compounds, and the appearance of such a structure was ascribed to a low local symmetry of the U-ion environment and hybridization-mediated two-ion interactions.
Abstract: Experiments using polarized and unpolarized neutrons have been performed on single crystals of and . A magnetic structure with a [001], easy axis and two types of uranium site having different values of the moment was found for both compounds. The values of magnetic moment at these two sites are 2.11 and for bismuthide, and 2.14 and for antimonide. The appearance of such a structure is ascribed to a low local symmetry of the U-ion environment and hybridization-mediated two-ion interactions.
12 citations
TL;DR: In this paper, a novel reflection mode and transmission mode GaAs (grown by metal organic chemical vapour deposition) photocathodes with the structures (GaAs-Na 3 Sb-Cs)-O-Cs, GaAs-N 2 KSb-C-O-C, and GaAs N 2 K-SiO-Oc)-Oc were fabricated.
6 citations
Patent•
07 May 1996TL;DR: In this paper, transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb3, P3, or As3.
Abstract: Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb3, P3, or As3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced semiconductor properties results in semiconductor materials which may be used in the fabrication of power semiconductor devices to substantially improve the efficiency of the resulting semiconductor device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing.
4 citations
Patent•
17 Dec 1996
TL;DR: In this article, an n-p-n heterojunction bipolar transistor (HBT) is formed on an InP substrate, which contains contacts for an emitter, a collector, and a base.
Abstract: PROBLEM TO BE SOLVED: To enable active carbon concentration, capable of substituting with conventional p-type GaInAs to be attained in GaAsSb by providing an epitaxial layer of carbon-doped gallium arsenide antimonide (GaAsSb: C) on an InP-based semiconductor material layer. SOLUTION: An n-p-n heterojunction bipolar transistor(HBT) 10 formed on an InP substrate 12 contains contacts 14, 16 and 18 respectively for an emitter, a collector, and a base. Further, a collector contact layer 20, a collector layer 22, a base layer 24, an emitter layer 26 and an emitter contact layer 28 are deposited epitaxially on the IMP substrate 12. Next, the thick doped base layer 24 (p ) made of carbon doped GaAaSb is substituted with a p-type GaInAs. Accordingly, a p-type dopant in low diffusion coefficient at high concentration can be assembled without hydrogen passivation.
3 citations
TL;DR: In this paper, the authors review recent applications of wavefunction engineering to the design of antimonide quantum heterostructures with favorable properties for infrared devices, such as electro-optical and all-optically modulators based on Г-L intervalley transfer, type-II quantum well lasers with enhanced gain per injected carrier, and type-2 interband cascade lasers predicted to combine low thresholds and high output powers.
Abstract: We review recent applications of wavefunction engineering to the design of antimonide quantum heterostructures with favorable properties for infrared devices. Examples include electro-optical and all-optical modulators based on Г-L intervalley transfer, type-II quantum well lasers with enhanced gain per injected carrier, and type-II interband cascade lasers predicted to combine low thresholds and high output powers.
1 citations
Journal Article•
TL;DR: In this paper, the results of the development of the technology for GaSb-based ridge wave-guide laser emitting at 2-23 μm at RT were presented. And the fabrication of double-channel mesa structure in AlSb and GaSba-containing alloys by RIE technique was discussed.
Abstract: Semiconducting antimonide compounds have received increasing attention as the alternative materials for mid-infrared photonic devices, with a variety of applications such as remote sensing, pollution monitoring, and molecular spectroscopy For many, if not all these devices it is necessary to pattern antimonide films into mesa or line structures While plasma etching techniques have played an increasing role in producing such features, little was reported until now on dry etching of GaSb- and AlSb-containing alloys In this paper we present the results of our recent work towards the development of the technology for GaSb-based ridge wave-guide laser emitting at 2-23 μm at RT Specifically, we discuss the fabrication of double-channel mesa structure in AlxGai1−xAsySb1−y/GaSb (x=02-05) heterostructure materials by RIE technique The effects of gas and material composition, rf power, pressure and temperature on etching characteristics were studied with special attention paid to surface quality, etching rate and etching profile, which are crucial for obtaining a single mode waveguide CCI2F2/H2 and CCI4/H2 process chemistries were investigated which shows the latter to provide vertical sidewalls and residue free etch surfaces at controllable etch rates
Patent•
01 Aug 1996
TL;DR: In this paper, a method for low temperature cleaning of group III-V semiconductor substrates, in particular substrates containing indium or antimonide, whereby the substrate is heated in an oxygen-free environment and exposed to a chemical cleaning agent.
Abstract: A method for low temperature cleaning of group III-V semiconductor substrates, in particular substrates containing indium or antimonide, whereby the substrate is heated in an oxygen-free environment and exposed to a chemical cleaning agent. The chemical is of the form (Me2N)3-X, where X is a group V element (e.g. arsenic (As), antimony (Sb), phosphorus (P)), also present in the substrate. Examples of the chemicals are tris(dimethylamino)arsine [TDMAAs] = (Me2N)3As, tris(dimethylamino)antimony [TDMASb] = (Me2N)3Sb, and tris(dimethylamino)phosphine [TDMAP] = (Me2N)3P. The cleaning process removes the native oxide layer on the surface of the substrate, leaving a smooth, atomically flat surface suitable for epitaxial growth. The process is of particular importance to thermally unstable substrates, for example indium antimonide (InSb), which are difficult to clean using conventional techniques.
TL;DR: In this article, the monitoring and control of group V incorporation, compositions in a mixed group V compounds, and interfaces with different anions are addressed in growing phosphides/arsenide-based heterostructures.
TL;DR: In this paper, a review of large-area detector arrays, high resistivity substrates and thermophotovoltaics, and ternary (Ga,In)Sb are discussed from the perspective of an established commercial supplier, Firebird Semiconductor Ltd.
Abstract: Significant advances continue to be made made in application and production of the narrow gap, antimonide compound semiconductors. Growth of these at 3- and even 4-in diameters has been achieved with good homogeneity and acceptable defect density. In parallel, wafer surface finish suitable for direct epitaxy, “epi-ready” wafering is making good progress. In this review large-area detector arrays, high resistivity substrates and thermophotovoltaics, and ternary (Ga,In)Sb are discussed from the perspective of an established commercial supplier, Firebird Semiconductor Ltd.
21 Apr 1996
TL;DR: In this article, the authors highlight the growth, by MOVPE, of some InAs/GaSb superlattices, and compare this with published results from the growth of InGaAs/InP super-connections, particularly with respect to the issues mentioned above.
Abstract: There are a number of important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. InAs/GaSb superlattices are a small sub-set of antimonide based semiconductors which are of interest to those studying solid state physics and designing devices with infrared applications. This paper will highlight the growth, by MOVPE, of some InAs/GaSb superlattices, and compare this with published results from the growth of InGaAs/InP superlattices, particularly with respect to the issues mentioned above.
TL;DR: In this article, the authors report the growth, fabrication, and modeling of high performance diode lasers with wavelengths longer than 3 μm, and discuss future directions for improved device performance.
Abstract: Recently, mid-infrared diode lasers fabricated from the antimonide-based III-V compounds have been receiving increased attention for potential applications in trace gas detection, spectroscopy, pollution monitoring, and military systems. In this paper we will report the growth, fabrication, and modeling of high performance diode lasers with wavelengths longer than 3 μm. Molecular beam epitaxy (MBE) has been employed for the growth of these Type-I, strained quantum-well (QW) laser structures on GaSb and InAs substrates. The lasers consist of compressively strained InAsSb wells, tensile-strained InAlAsSb barriers, and lattice-matched AlAsSb cladding layers. QW lasers grown on GaSb substrates, with emission wavelengths of ∼3.9 μm, have operated pulsed up to 165 K. At 80 K, cw power of 30 mW/Facet has been obtained. Ridge-waveguide lasers have operated cw up to 128K. QW lasers grown on InAs substrates have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers on InAs have exhibited cw power of 215 mW/facet at 80 K, pulsed threshold current density as low as 30 A/cm 2 at 80 K, characteristic temperatures (T O ) between 30 and 40 K, and maximum pulsed operating temperature of 225 K. Ridge-waveguide lasers on InAs have cw threshold current of 12 mA at 100 K, and a maximum cw operating temperature of 175 K. In this paper we will present some of the key issues regarding the MBE growth, fabrication, and modeling of such lasers and discuss future directions for improved device performance.
TL;DR: In this article, the authors presented a selfconsistent numerical analysis of the electronic structure of field effect transistors, where electric transport channel is a quasi-two-dimensional plan of Antimonide doping in a Silicon crystal.
Abstract: New implementations in MBE growth techniques allow high accuracy in δ-doping profiles in Silicon crystals. In this work we present a self-consistent numerical calculations of the electronic structure of δ-FETs, field effect transistors where electric transport channel is a quasi-two-dimensional plan of Antimonide doping in a Silicon crystal. We made the calculations to the heavy and light electrons at 77 and 300K varying the gate voltage in devices with one to three coupled deltas. We obtain the effective potential, the sub-bands and respective electronic densities, basic calculations to point at optimization of the device. We made considerations on theirs DC - capacitances and free electron density spreadings to achieve the gate-voltage best performance.