Showing papers on "Antimonide published in 1997"
TL;DR: In this article, the effect of these difficulties on the growth of the binary materials, and hence the various antimonide based devices such as lasers, LEDs, photodetectors, and Hall probes, is discussed.
59 citations
TL;DR: In this paper, a type-II antimonide midinfrared vertical-cavity surface-emitting laser is reported, with an emission wavelength of 2.9 μm that is nearly independent of temperature (dλ/dT≈ 0.07 nm).
Abstract: We report a type-II antimonide midinfrared vertical-cavity surface-emitting laser. The emission wavelength of 2.9 μm is nearly independent of temperature (dλ/dT≈0.07 nm/K) and the multimode linewidth is quite narrow (3.5 nm). The pulsed threshold power at 86 K is as low as 22 mW for a 30 μm spot. Lasing is observed up to T=280 K, and the peak output power from a 600 μm spot exceeds 2 W up to 260 K. The differential power conversion efficiency is >1% at 220 K.
49 citations
TL;DR: An antimonide diode laser operating near 2.65 mum was used to measure absorption lines of NO gas in the first overtone band and a blended line pair of NO that is sufficiently free of interference from H(2) O to permit the selective detection of NO under reduced pressure conditions was identified.
Abstract: An antimonide diode laser operating near 2.65 mum was used to measure absorption lines of NO gas in the first overtone band. A blended line pair of NO that is sufficiently free of interference from H(2) O to permit the selective detection of NO under reduced pressure conditions was identified. With wavelength-modulation spectroscopy, a rms noise level equivalent to an absorbance of 3.2 x 10(-5) was achieved at a measurement integration time (for a single spectral data point) of 0.1 s. The corresponding detection sensitivity (signal-to-noise ratio of 2) for NO in air at reduced pressure was ~15 ppm m (ppm is parts in 10(6)). Antimonide diode lasers show substantial promise for gas-sensing applications because they can gain access to relatively strong absorption lines of several gases of environmental interest at operating wavelengths at which cryogenic cooling is not required.
34 citations
TL;DR: In this article, the growth rates of antimonides on (1 0 0) substrates are generally low because the decomposition of group III species is suppressed by the excessively adsorbed antimony atoms on the surface.
8 citations
01 Oct 1997
TL;DR: In this article, the authors explore the wavelength limits which are dictated by the requirements for pseudomorphic growth and adequate carrier confinement and compare the results with the results of the Van de Walle model solid theory.
Abstract: Strained GaInAs grown on InP offers an alternative to antimonide-based technology for mid-IR light emitting diodes and lasers operating at wavelengths up to approximately 2.4 microns. Such devices consist of compressively strained GaInAs carrier quantum well, with either lattice-matched or tensile-strained GaInAs carrier confinement barriers, and lattice-matched AlInAs optical confinement layers. The paper explores the wavelength limits which are dictated by the requirements for pseudomorphic growth and adequate carrier confinement. The electrical and optical results obtained from structures emitting at 2.1 and 1.8 microns at room temperature are reported and the data compared with the results of the Van de Walle model solid theory.
6 citations
TL;DR: In this paper, the first reported data in which Sn was used as a charge compensator in filled antimonide skutterudites, and the finding that Sn doping does not effect polycrystalline Bi1-xSbx as it does single crystal samples.
Abstract: We discuss ongoing work in three areas of thermoelectric materials research: 1) broad band semiconductors featuring anion networks, 2) filled skutterudites, and 3) polycrystalline Bi-Sb alloys. Key results include: a preliminary evaluation of a previously untested ternary semiconductor, KSnSb; the first reported data in which Sn is used as a charge compensator in filled antimonide skutterudites; the finding that Sn doping does not effect polycrystalline Bi1-xSbx as it does single crystal samples.
5 citations
TL;DR: In this article, the phonon dispersion curves for aluminium arsenide and antimonide have been investigated by using a deformation bond approximation model, and the results obtained from this model are compared with the experimental values wherever it is available.
Abstract: The phonon dispersion curves for aluminium arsenide and antimonide have been investigated by using a deformation bond approximation model. The results obtained from this model are compared with the experimental values wherever it is available. Since there is no complete experimental phonon dispersion curves for AlAs, we could not compare our calculated results, but the results of AlSb have been compared with the inelastic neutron scattering measurements at 15 K. However, we compare the phonon frequencies of AlAs and AlSb at critical points of the Brillouin zone obtained by our calculations and Raman spectroscopy measurements. This model predicts the phonon modes satisfactorily in all the symmetry directions of the Brillouin zone (BZ). The spectrum has similar features as observed in other III–V compound semiconductors.
5 citations
01 Mar 1997
TL;DR: In this article, the authors survey and assess new concepts for next-generation GaSb-based thermophotovoltaic (TPV) devices, including liquid-phase epitaxial lateral overgrowth on patterned, masked substrates.
Abstract: We survey and assess new concepts for “next-generation” GaSb-based thermophotovoltaic (TPV) devices. The objectives are new device structures with novel back mirror designs to better utilize photon recycling effects, isolation schemes to realize monolithic, series-interconnected TPV arrays, and reduced cost by the use of surrogate substrates in place of GaSb or InAs wafers. The processes considered include 1. liquid-phase epitaxial lateral overgrowth on patterned, masked substrates, 2. epitaxial film transfer or wafer fusion techniques, 3. epitaxial growth of GaSb alloys on high resistivity (lattice matched) ZnTe, 4. realization of semi-insulating III-V antimonides, 5. selective wet oxidation of Al-containing antimonides (e.g., AlAsSb) wherein a the semiconducting epitaxial layer is converted to Al2O3 to form a buried insulating layer, and 6. GaSb- and InAs-on-silicon heteroepitaxy.
4 citations
TL;DR: In this article, Ga1−xInxAsySb1−y alloys lattice-matched to GaSb were grown from Sb-rich solutions by liquid phase epitaxy on (100)-oriented GaInAsSb substrates at growth temperatures larger than 600°C with supercooled temperatures (ΔT) varied from 4 to 12°C.
3 citations
TL;DR: In this article, an optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a W configuration of type-II antimonide quantum wells is reported.
Abstract: An optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a “W” configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 μm has a weak temperature variation (d ⋋ /dT ≈ 0.07–0.09 nm/K), and the multimode linewidth is quite narrow (2.5-4 nm). Lasing is observed up to T = 280 K in pulsed mode and up to 160 K cw. Under cw excitation at T = 78 K, the threshold pump power is as low as 4 mW for a 6 am spot, and the differential power conversion efficiency is 4.5%.
3 citations
01 Jan 1997
TL;DR: In this paper, a number of volatile antimony precursors were synthesized for low temperature chemical vapor deposition (CVD) of antimony thin films, including tris (trifluoromethyl)stibine, Sb(CF3)3, Lewis base adducts of Sb3, and SbH3.
Abstract: Volatile antimony precursors were synthesized for the low temperature chemical vapor deposition (CVD) of antimony thin films. The molecules synthesized include tris (trifluoromethyl)stibine, Sb(CF3)3, Lewis base adducts of Sb(CF3)3, and antimony trihydride (stibine), SbH3. Isotopie substitution of stibine with deuterium leads to a more thermally stable, carbon-free antimony source. Similarly, deuterium substitution of trimethylsilylmethyl antimony dihydride leads to a stabilized liquid antimony precursor. The molecules were characterized using FTIR, NMR and DSC / TGA. Pure antimony films were deposited at temperatures below 300 °C with growth rates approaching 170 A / min using a low pressure hot-wall CVD reactor. The films were characterized using XRD, EDS, SEM and AFM.
11 Aug 1997
TL;DR: The AlGaAsSb system appears very suitable to elaborate high reflective DBRs with a low number of pairs operating at wavelengths of interest for telecommunications (13 and 155 /spl mu/m).
Abstract: The AlGaAsSb system appears very suitable to elaborate high reflective DBRs with a low number of pairs operating at wavelengths of interest for telecommunications (13 and 155 /spl mu/m) Very high reflectivities of 992% at 156 /spl mu/m and for the first time 988% at 13 /spl mu/m have been obtained We are now investigating this antimonide approach for fabricating monolithic VCSELs Thus the elaboration of an active layer composed of InGaAs wells encapsulated within AlGaInAs barriers is under evaluation
01 Jan 1997
TL;DR: Strossner et al. as discussed by the authors measured the dependence of the energy gap absorptance of aluminum antimonide (AlSb) at room the temperature for hydrostatic pressures from atmospheric up to the phase change at about 8 GPa.
Abstract: Publisher Summary It is noted that the refractive index, n, and the extinction coefficient, k, of aluminum antimonide (AlSb) is measured for a limited number of samples. The two main reasons for this: (1) large high-quality single crystals are difficult to grow, and (2) the surface of AlSb reacts rapidly with the atmosphere to produce a relatively thick contaminated layer. One method for measuring the optical properties of semiconductors, especially for the ultraviolet and visible regions, is spectroscopic ellipsometry. Using the wet-chemical etching procedures have helped in obtaining AlSb surfaces of sufficient quality for ellipsometric measurements at room the temperature from 5.8-1.4 eV. They also report that n and k values are calculated from the measured pseudo-dielectric function. This is called the “pseudo-dielectric function” because no corrections are made for any surface overlayers. Strossner et al measured the dependence of the energy gap absorptance of AlSb at room the temperature for hydrostatic pressures from atmospheric up to the phase change at about 8 GPa.
TL;DR: In this paper, a defect and substitution variant of the binary silicide V 5 Si 3 with W 4 Si 3 -type structure, V 4 SiSb 2, was described.
Abstract: The new compound V 4 SiSb 2 was prepared by reaction of the elemental components in an arc-melting furnace. Its crystal structure was determined from single-crystal X-ray data: I 4/ mcm , a = 987.2(3) m, c = 470.7(1) pm, Z = 4, R = 0.020 for 241 structure factors and 14 variable parameters. It may be regarded as a defect and substitution variant of the binary silicide V 5 Si 3 with W 5 Si 3 -type structure: one vanadium position is unoccupied, and the antimony atoms of V 4 SiSb 2 were found at the positions of one silicon site of V 4 Si 3 . The silicon atoms form chains with the two-electron bond distance of 235.4(1) pm. The antimony atoms are isolated from each other, suggesting oxidation numbers corresponding to the formula (V −2 ) 4 Si 2 (Sb 3 ) 2 . In addition to silicon and antimony, the vanadium atoms have vanadium neighbours at bond distances varying between 289.3(2) and 311.9(2) pm.
11 Aug 1997
TL;DR: In this article, a trace gas monitoring with antimonide diode lasers combined with high sensitivity absorption detection techniques is described, which targets NO, CO, H/sub 2/O and H/ sub 2/CO detection under reduced pressure sampling conditions.
Abstract: Trace gas monitoring with antimonide diode lasers combined with high sensitivity absorption detection techniques is described. Our work in progress targets NO, CO, H/sub 2/O and H/sub 2/CO detection under reduced pressure sampling conditions.