Showing papers on "Antimonide published in 2003"
TL;DR: The optical properties of strained GaAsSb/GaAs quantum wells grown by molecular beam epitaxy were investigated by photoluminescence spectroscopy as a function of excitation intensity and temperature as mentioned in this paper.
Abstract: The optical properties of strained GaAsSb/GaAs quantum wells grown by molecular beam epitaxy were investigated by photoluminescence spectroscopy as a function of excitation intensity and temperature. Photoluminescence spectra exhibit strong blue shifts of the emission peak with increasing excitation intensity, ascribed to the interplay between band tail filling at low carrier densities and electrostatic band bending at high carrier concentrations. Spectroscopic data are consistent with a type II band alignment, with a small conduction band offset (ΔEc∼100 meV), and gain spectra are blue shifted with respect to the low excitation luminescence. The large material gain and fast carrier recombination lifetimes demonstrate the viability of this material system for the fabrication of 1.3 μm lasers.
57 citations
TL;DR: In this paper, the properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-length infrared (LWIR) range were reviewed.
Abstract: The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3–5 μ m range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.
54 citations
TL;DR: In this article, the antimonide-based long-wavelength VCSEL was used for room-temperature continuous-wave operation with 1.2 mW power output at 1266 nm.
Abstract: Room-temperature continuous-wave operation of antimonide-based long wavelength VCSELs is demonstrated, with 1.2 mW power output at 1266 nm, the highest figure reported so far using this material system. Singlemode powers of 0.3 mW at 10/spl deg/C and 0.1 mW at 70/spl deg/C and sidemode suppression ratios up to 42 dB are also achieved.
47 citations
TL;DR: In this article, the photoluminescence (PL) and lasing characteristics of mid-IR type II "W" structures depend on the molecular beam epitaxy growth conditions, and the growth temperature that yields the highest PL intensities and narrowest PL lines is found to be in the ≈480-510°C range, which is considerably higher than the temperatures used in previous type II antimonide laser growths.
Abstract: We have studied how the photoluminescence (PL) and lasing characteristics of mid-IR type II “W” [InAs/Ga1−xInxSb/InAs/AlAsySb1−y] structures depend on the molecular beam epitaxy growth conditions. The growth temperature that yields the highest PL intensities and narrowest PL lines is found to be in the ≈480–510 °C range, which is considerably higher than the temperatures used in previous type II antimonide laser growths. Also contrary to earlier reports is our observation that using migration-enhanced epitaxy to force an InSb-like interface bond type is detrimental to the laser performance. The PL intensity at 78 K is found to correlate closely with the PL intensities and linewidths at all temperatures, as well as the lasing linewidths, thresholds, and efficiencies. Even though the tested laser structures were grown at a nonoptimal lower substrate temperature of 425 °C, they nonetheless yielded much better morphology, better-resolved x-ray features, stronger PL intensities, narrower PL linewidths, lower lasing thresholds ( 20 ns at 78 K) than any previous antimonide lasers grown on the present Riber 32P molecular beam epitaxy system.
44 citations
TL;DR: In this paper, a ternary antimonide superlattice photodiode with a 21 μm cutoff wavelength was described, where the active region consists of 150 periods of 10 monolayers (MLs) of In0.93Sb and 19 MLs of InAs with InSb-like interfacial bonds.
Abstract: We describe a ternary antimonide superlattice photodiode with a 21 μm cutoff wavelength. The active region consists of 150 periods of 10 monolayers (MLs) of In0.07Ga0.93Sb and 19 MLs of InAs with InSb-like interfacial bonds. The device has a detectivity of 3×109 cm√Hz/W, dynamic impedance-area product of 0.18 Ω cm2, and peak external quantum efficiency of 3% at 40 K. X-ray diffraction and cross-sectional scanning tunneling microscopy show the structure to have a high degree of order with abrupt interfaces. A simulation of the absorption spectrum effectively reproduces the observed spectrum.
37 citations
01 Jan 2003
TL;DR: In this paper, photoacoustic (PA) spectroscopy of methane using an antimonide semiconductor laser is reported. But the laser was not optimized for the laser characteristics, and its performance was unsatisfactory.
Abstract: First investigations of photoacoustic (PA) spectroscopy (PAS) of methane using an antimonide semiconductor laser are reported. The laser fabrication is made in two steps. The structure is firstly grown by molecular beam epitaxy, then a metallic distributed-feedback (DFB) grating is processed. The laser operates at 2371.6 nm in continuous wave and at room temperature. It demonstrates single-mode emission with typical tuning coefficients of 0.04 nm mA(-1) and 0.2 nm K(-1). PA detection of methane was performed by coupling this laser into a radial PA cell. A detection limit of 20 ppm has been achieved in a preliminary configuration that was not optimised for the laser characteristics.
33 citations
TL;DR: In this article, an antimonide-based thermophotovoltaic monolithic interconnected module has been fabricated and tested using In 0.1 Ga 0.9 As 0.6 As 0 0.04 Sb 0.92 cell isolation diodes.
26 citations
TL;DR: In this article, the A atoms can be intercalated in small amounts into the cubic voids of the Mo3Sb7 structure without noticeable symmetry changes (space group Imm).
Abstract: Mo3Sb7 was synthesized by heating the elements in the stoichiometric ratio in a sealed silica tube at 700 °C. The title compounds AδMo3Sb7 (A = Mg, Ni, Cu) were prepared by annealing prereacted Mo3Sb7 with different amounts of A in powder form between 500 and 750 °C. According to our single-crystal structure studies, the A atoms can be intercalated in small amounts into the cubic voids of the Mo3Sb7 structure without noticeable symmetry changes (space group Imm). The different cations cause different band-gap decreases that depend on the element as well as its concentration.Key words: thermoelectrics, band-gap tuning, intercalation, antimonide, electronic structure.
23 citations
TL;DR: In this article, the authors performed thermodynamic calculations to estimate ternary phase equilibria in many of the transition metal-Ga-Sb systems and used the results of their calculations and a limited number of experiments to identify candidates for nonreactive elemental contacts to GaSb.
Abstract: Antimonide-based compound semiconductors are promising candidates for high-frequency, low-power electronic devices as well as a variety of optoelectronic devices. To assist with the design of shallow or thermally stable contacts, we have performed thermodynamic calculations to estimate ternary phase equilibria in many of the transition metal-Ga-Sb systems. We have used the results of our calculations and a limited number of experiments to identify candidates for nonreactive elemental contacts to GaSb. Both W and Re are clearly in thermodynamic equilibrium with GaSb under the conditions considered in our study. Metal gallides and antimonides that are candidates for thermally stable contacts to GaSb are also highlighted.
18 citations
TL;DR: In this article, a ternary molybdenum antimonide-sulfide, Mo2SbS2, was identified, which can be synthesized by reacting stoichiometric amounts of the elements at 850 °C for 7 da...
Abstract: We identified a new ternary molybdenum antimonide-sulfide, Mo2SbS2. Black, needle-shaped crystals of Mo2SbS2 can be synthesized by reacting stoichiometric amounts of the elements at 850 °C for 7 da...
15 citations
TL;DR: The binary antimonide Ti11-xSb8-y was prepared from directly reacting the elements in stoichiometric ratios, either by melting the reaction mixture in an arc furnace or by annealing it in a resistance furnace above 1000 °C as mentioned in this paper.
Abstract: The new binary antimonide Ti11-xSb8-y was prepared from directly reacting the elements in stoichiometric ratios, either by melting the reaction mixture in an arc furnace or by annealing it in a resistance furnace above 1000 °C. Ti11-xSb8-y is a nonstoichiometric compound with a small phase range that cannot be prepared with the idealized Ti:Sb ratio of 11:8. Ti10.84(3)Sb7.74(1) crystallizes in the Cr11Ge8 type, isostructural with (Zr,V)11Sb8: space group Pnma, lattice dimensions a = 1462.28(9) pm, b = 559.72(4) pm, c = 1764.4(1) pm, V = 1.4441(2) nm3 (Z = 4). One can describe this type as an intergrowth of distorted fragments of the NiAs and W5Si3 types. In addition to the dominating heteronuclear Ti−Sb bonds, the structure of Ti11-xSb8-y comprises several homonuclear Ti−Ti and Sb−Sb bonding interactions. Short bonds of alternating 276 and 284 pm occur in a linear nonclassical chain of mainly Sb atoms (i.e., 87% Sb and 13% Ti). According to our experiments, the incorporation of Ti atoms into this chain, ...
10 Nov 2003
TL;DR: In this paper, the effects of the injected current and the thermal resistance on the tunability of antimonide-based diode-based laser was studied. And the authors showed that the tunable-diode-laser absorption spectroscopy (TDLAS) was well adapted to gas detection, paradoxically because of their large thermal resistance Rth which increases Joule heating.
Abstract: A study of the effects of the injected current and the thermal resistance on the tunability of antimonide-based diode lasers is presented. The studied diode lasers, emitting at around 2.3 µm, are dedicated to gas detection in the atmosphere, based on tunable-diode-laser absorption spectroscopy (TDLAS). This very useful technique requires, from the lasers, an emitted tunable wavelength able to cross a gas absorption line to detect the absorbed light. Typically a tuning rate of a few GHz/mA is sufficient to perform gas detection at atmospheric pressure (Vicet et al., 2002). It is then important to know and understand the tuning properties of the devices to achieve gas detection. They are very sensitive to thermal effects which are involved in all tuning processes. The lasers studied are shown to be well adapted to gas detection, paradoxically because of their large thermal resistance Rth which increases Joule heating, and mainly affects their tunability.
TL;DR: In this paper, the authors performed thermodynamic calculations to estimate ternary phase equilibria in many of the transition metal-Ga-Sb systems and used the results of their calculations and a limited number of experiments to identify candidates for nonreactive elemental contacts to GaSb.
Abstract: Antimonide-based compound semiconductors are promising candidates for high-frequency, low-power electronic devices as well as a variety of optoelectronic devices. To assist with the design of shallow or thermally stable contacts, we have performed thermodynamic calculations to estimate ternary phase equilibria in many of the transition metal-Ga-Sb systems. We have used the results of our calculations and a limited number of experiments to identify candidates for nonreactive elemental contacts to GaSb. Both W and Re are clearly in thermodynamic equilibrium with GaSb under the conditions considered in our study. Metal gallides and antimonides that are candidates for thermally stable contacts to GaSb are also highlighted.
TL;DR: In this article, the isothermal section of the Zr-Cu-Sb ternary system at 770 K has been investigated by X-ray phase analysis and the structure of Zr2CuSb3 antimonide with the new structure type (space group P 4 m2 ) and two new ternaries compounds were obtained and their crystal structures were determined.
23 Jan 2003
TL;DR: In this article, the antimonide family of semiconductors should be considered in some cases as a serious alternative to MCT for the active region of next generation IR detectors, based on epitaxial materials.
Abstract: We propose that the antimonide family of semiconductors should be considered in some cases as a serious alternative to Mercury Cadmium Telluride (MCT) for the active region of next generation IR detectors, based on epitaxial materials Among the alloys, epitaxial InAs1-ySby on GaSb with 007 < y < 011 and In1-zAlzSb on InSb with 0 < z < 003 together span important regions of the MWIR atmospheric window, yet exhibit strains of less than 015% Both InSb and GaSb are binary substrates available in high quality The sensitivity of bandgap to composition in In1-zAlzSb is similar to that in MCT However, in InAs1-ySby this sensitivity is more than halved In growth from the gas phase, the constraints on temperature stability are about 3 - 5 times lower than in MCT Together, these characteristics make it easier to achieve high uniformity, particularly in InAs1-ySby Finally, high quality superlattices based on InAs/Ga1-xInxSb can be grown by lattice matching to GaSb This epitaxial material is emerging as an attractive alternative to MCT with a high degree of spatial uniformity and with an ability to span cut-off wavelengths from 3-20m in a single material system
TL;DR: In this paper, the authors report high quality mid-infrared electroluminescent devices based on a quantum cascade design using InAs/GaSb/AlSb heterostructures grown on GaSb substrates.
TL;DR: In this paper, the chemical bonding in CdSb and the synthesis of Csb-based materials for novel optical, thermoelectric, and other devices are discussed.
Abstract: Data are presented on the chemical bonding in CdSb and the synthesis of CdSb-based materials for novel optical, thermoelectric, and other devices.
TL;DR: In this paper, the phase relations between the solid solution and liquid phase in a region of dilute arsenic or antimony in these systems were also determined at 1423 K with a quenching technique.
Abstract: Arsenic and antimony activities in the Fe-Ni-As and Fe-Ni-Sb ternary systems were measured at 1423 K by an isothermal isopiestic method to obtain fundamental information about the behaviour of arsenic and antimony in processing intermediate products, nickel arsenide or antimonide ores. Phase relations between the solid solution and liquid phase in a region of dilute arsenic or antimony in these systems were also determined at 1423 K with a quenching technique. The isoactivity lines of arsenic in the homogeneous liquid phase were almost parallel to the Ni-Fe axis of Fe-Ni-As ternary composition diagram, while those of antimony represented a negative gradient due to stronger chemical affinity of antimony to nickel as compared to iron. The iron and nickel activities in these ternary systems were derived from the measured arsenic or antimony activity and the determined phase relations. The Redlich-Kister-Muggianu polynomial formula was successfully applied to express the activities as a function of alloy compositions. Based on the obtained data, the total pressures of arsenic and antimony gas species were evaluated to discuss the possibility to recover or eliminate arsenic and antimony from the alloys by means of volatilization.
TL;DR: In this paper, the electronic band structure of the alkali antimonide Li2CSb has been calculated based on this calculation, estimates are given for the absorption coefficient and the radiative lifetime of the photoelectron.
Abstract: The electronic band structure of the alkali antimonide Li2CsSb has been calculated Based on this calculation, estimates are given for the absorption coefficient and the radiative lifetime of the photoelectron The optical generation of photoelectrons in this material proceeds via a direct optical transition, but after relaxation of the photoelectron it is prohibited to recombine with a valence band hole due to the indirect band gap The photoelectron lifetime and the diffusion lengths are compared with other photocathode materials The results suggest that for Li2CsSb the photocathode can be made significantly thicker and therefore more efficient
10 Jan 2003
TL;DR: In this paper, a single step diffusion process followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high efficiency, p−n junction GaSb and GaInSb thermophotovoltaic cells.
Abstract: This paper presents results of experimental and theoretical research on antimonide‐ based thermophotovoltaic (TPV) materials and cells. The topics discussed include: growth of large diameter ternary GaInSb bulk crystals, substrate preparation, diffused junction processes, cell fabrication and characterization, and, cell modeling. Ternary GaInSb boules up to 2 inches in diameter have been grown using the vertical Bridgman technique with a novel self solute feeding technique. A single step diffusion process followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high efficiency, p‐n junction GaSb and GaInSb thermophotovoltaic cells. The optimum junction depth to obtain the highest quantum efficiency and open circuit voltage has been identified based on diffusion lengths (or minority carrier lifetimes), carrier mobility and experimental diffused impurity profiles. Theoretical assessment of the performance of ternary (GaInSb) and binary (GaSb) cells f...
TL;DR: The structure of PtSiSb consists of a three-dimensional network built up by condensing PtSi 3 Sb 3 octahedra through both corner-and edge-sharing as discussed by the authors.
TL;DR: In this article, the first quaternary rare-earth antimonide containing a p-block metal and a transition metal was synthesized by reaction of the elements and its structure has been determined by single-crystal X-ray diffraction methods.
10 Nov 2003
TL;DR: In this article, the authors used liquid phase epitaxy (LPE) for the growth of ternary and quaternary alloy III-V antimonides for mid-infrared optoelectronics applications.
Abstract: Thick (>100 µm) epitaxial layers of ternary and quaternary alloy III–V antimonides (e.g. InAsSb, InGaSb, AlGaAsSb, InGaAsSb and InAsSbP) can function as ‘virtual’ substrates for mid-infrared optoelectronics applications. Such alloy substrates have adjustable lattice constants and bandgaps, and are therefore of considerable interest for epitaxial growth of lattice-matched or strain-engineered epitaxial device structures, including mid-infrared detectors and light-emitting diodes. Liquid-phase epitaxy (LPE) methods can be readily adapted for the growth of such III–V antimonide virtual substrates due to the fast growth rates (1 to 10 µm/min) that are achievable with III–V antimonide LPE. The authors report on the development of InAsSb and InAsSbP virtual substrates consisting of two or three thick compositionally step-graded epitaxial layers grown by LPE on InAs substrates. Through this approach, ternary and quaternary alloy virtual substrates are obtained, with lattice constants and bandgaps significantly different from those currently available with binary compound substrates, including virtual substrates with optical absorption edges in the 4–5 µm wavelength range.
TL;DR: The Br-IBAE technique is shown to be an anisotropic antimonide etching technique that is capable of generating novel structures as well as performing standard etching tasks as discussed by the authors.
Abstract: Antimonide-based compound semiconductors have emerged as the materials of choice for fabricating high-speed low-power electronics and electro-optics for applications requiring miniaturization and portability. In this work Br-IBAE is shown to be an anisotropic antimonide etching technique that is capable of generating novel structures as well as performing standard etching tasks. When etching less than optimally chemical-mechanical polished (111) InSb wafers, sharp-tipped cone structures with tip radii of the order of less than 60 nm are produced. These structures may be ideally suited for the development of field-emission devices, where small tip radii are required for useful emission currents. The anisotropic nature of the IBAE technique allows one to etch channels in the surface at angles up to 70° from perpendicular, making the fabrication of microbeams feasible. Using an angled sample holder, the first etch undercuts the masked beams from one side. The sample is then removed and realigned so as to undercut the beams from the other side. The triangular shaped microbeams are left suspended from either one or both ends. Using a combination of atomic force microscopy and mechanical engineering beam analysis techniques, the elastic parameters of the material can be measured. The microbeams can be aligned along various directions on the surface to investigate anisotropic characteristics. This is particularly important for determining the mechanical characteristics of materials that can only be grown in thin epitaxial layers, such as quaternary antimonide-based compound semiconductors.
10 Jan 2003
TL;DR: In this paper, the performance of lattice matched quaternary (GaInAsSb) cells epitaxially grown on GaSb substrates to binary and ternary cells fabricated by Zn diffusion on bulk substrates is compared.
Abstract: This paper assesses the performance of antimonide‐based thermophotovoltaic cells fabricated by different technologies. In particular, the paper compares the performance of lattice matched quaternary (GaInAsSb) cells epitaxially grown on GaSb substrates to the performance of ternary (GaInSb) and binary (GaSb) cells fabricated by Zn diffusion on bulk substrates. The focus of the paper is to delineate the key performance advantages of the highest performance‐to‐date of the quaternary cells to the performance of the alternative ternary and binary antimonide‐based diffusion technology. The performance characteristics of the cells considered are obtained from PC‐1D simulations using appropriate material parameters.
26 Nov 2003
TL;DR: In this paper, a near-infrared Raman spectroscopic system was developed for antimonide-based materials to determine the majority carrier concentration in n-GaInAsSb epilayers.
Abstract: GaSb-based semiconductors are of interest for mid-infrared optoelectronic and high-speed electronic devices. Accurate determination of electrical properties is essential for optimizing the performance of these devices. However, electrical characterization of these semiconductors is not straightforward since semi-insulating (SI) GaSb substrates for Hall measurements are not available. In this work, the capability of Raman spectroscopy for determination of the majority carrier concentration in n-GaInAsSb epilayers was investigated. Raman spectroscopy offers the advantage of being non-contact and spatially resolved. Furthermore, the type of substrate used for the epilayer does not affect the measurement. However, for antimonide-based materials, traditionally employed Raman laser sources and detectors are not optimized for the analysis wavelength range dictated by the narrow band gap of these materials. Therefore, a near-infrared Raman spectroscopic system, optimized for antimonide-based materials, was developed. Ga{sub 0.85}In{sub 0.15}As{sub 0.13}Sb{sub 0.87} epilayers were grown by organometallic vapor phase epitaxy with doping levels in the range 2 to 80 x 10{sup 17} cm{sup -3}, as measured by secondary ion mass spectrometry. For a particular nominal doping level, epilayers were grown both lattice matched to n-GaSb substrates and lattice-mismatched to SI GaAs substrates under nominally identical conditions. Single magnetic field Hall measurements were performed on the epilayers grown on SI GaAs substrates, while Raman spectroscopy was used to measure the carrier concentration of epilayers grown on GaSb and the corresponding SI GaAs substrates. Compared to Hall measurements, Raman spectra indicated that the GaInAs/Sb epilayers grown on GaSb substrates have higher free carrier concentrations than the corresponding epilayers grown on SI GaAs substrates under nominally identical conditions. This is contrary to the assumption that for nominally identical growth conditions, the resulting carrier concentration is independent of substrate, and possible mechanisms will be discussed.
TL;DR: In this paper, the capability of Raman spectroscopy for determination of the majority carrier concentration in n-GaInAsSb epilayers was investigated, and it was shown that the resulting carrier concentration is independent of substrate.
Abstract: GaSb-based semiconductors are of interest for mid-infrared optoelectronic and high-speed electronic devices. Accurate determination of electrical properties is essential for optimizing the performance of these devices. However, electrical characterization of these semiconductors is not straightforward since semi-insulating (SI) GaSb substrates for Hall measurements are not available. In this work, the capability of Raman spectroscopy for determination of the majority carrier concentration in n-GaInAsSb epilayers was investigated. Raman spectroscopy offers the advantage of being non-contact and spatially resolved. Furthermore, the type of substrate used for the epilayer does not affect the measurement. However, for antimonide-based materials, traditionally employed Raman laser sources and detectors are not optimized for the analysis wavelength range dictated by the narrow band gap of these materials. Therefore, a near-infrared Raman spectroscopic system, optimized for antimonide-based materials, was developed. Ga{sub 0.85}In{sub 0.15}As{sub 0.13}Sb{sub 0.87} epilayers were grown by organometallic vapor phase epitaxy with doping levels in the range 2 to 80 x 10{sup 17} cm{sup -3}, as measured by secondary ion mass spectrometry. For a particular nominal doping level, epilayers were grown both lattice matched to n-GaSb substrates and lattice-mismatched to SI GaAs substrates under nominally identical conditions. Single magnetic field Hall measurements were performed on the epilayersmore » grown on SI GaAs substrates, while Raman spectroscopy was used to measure the carrier concentration of epilayers grown on GaSb and the corresponding SI GaAs substrates. Compared to Hall measurements, Raman spectra indicated that the GaInAs/Sb epilayers grown on GaSb substrates have higher free carrier concentrations than the corresponding epilayers grown on SI GaAs substrates under nominally identical conditions. This is contrary to the assumption that for nominally identical growth conditions, the resulting carrier concentration is independent of substrate, and possible mechanisms will be discussed.« less
10 Nov 2003
TL;DR: In this article, high-resolution X-ray diffraction studies of two antimonide-based mid-infrared W-laser samples were performed to achieve lattice matching of the active region to the substrate in the second sample.
Abstract: The authors report on high-resolution X-ray diffraction studies of two antimonide-based mid-infrared W-laser samples. Both samples are of the same layer structure but with different mixed anion interface compositions in order to achieve lattice matching of the active region to the substrate in the second sample. A structural analysis, taking effects into account such as layer relaxation, layer tilting and asymmetrical strain enables an accurate determination of the average lattice constant of the active regions. The authors verify that the aim of lattice matching of the active region in the second sample is clearly achieved, and they also determine the strain values of the W-structure quantum-well layers and estimate the mixed anion interface stoichiometry. With a knowledge of the determined structural parameters, non-radiative recombination processes are investigated with time-resolved photoluminescence as well as laser properties under optically pumped laser operation.
Journal Article•
TL;DR: In this paper, the phase relations between the solid solution and liquid phase in a region of dilute arsenic or antimony in these systems were also determined at 1423 K with a quenching technique.
Abstract: Arsenic and antimony activities in the Fe-Ni-As and Fe-Ni-Sb ternary systems were measured at 1423 K by an isothermal isopiestic method to obtain fundamental information about the behaviour of arsenic and antimony in processing intermediate products, nickel arsenide or antimonide ores. Phase relations between the solid solution and liquid phase in a region of dilute arsenic or antimony in these systems were also determined at 1423 K with a quenching technique. The isoactivity lines of arsenic in the homogeneous liquid phase were almost parallel to the Ni-Fe axis of Fe-Ni-As ternary composition diagram, while those of antimony represented a negative gradient due to stronger chemical affinity of antimony to nickel as compared to iron. The iron and nickel activities in these ternary systems were derived from the measured arsenic or antimony activity and the determined phase relations. The Redlich-Kister-Muggianu polynomial formula was successfully applied to express the activities as a function of alloy compositions. Based on the obtained data, the total pressures of arsenic and antimony gas species were evaluated to discuss the possibility to recover or eliminate arsenic and antimony from the alloys by means of volatilization.
01 Dec 2003
TL;DR: In this paper, the authors investigated III-antimonide/nitride-based materials for unique semiconductor properties and applications and concluded that InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber.
Abstract: The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and havemore » achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.« less