Showing papers on "Antimonide published in 2017"
TL;DR: In this article, the development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HCdTe.
Abstract: Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher op...
186 citations
TL;DR: In this article, a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility was proposed. But the effect of surface roughness on the emittance was not analyzed.
Abstract: Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. We calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.
41 citations
TL;DR: High potential was demonstrated of these compounds as new thermoelectrics for their very low thermal conductivity and moderate Seebeck coefficient and Magnetism studies and theoretical calculations were conducted as well to better understand the structure-and-property correlation of these materials.
Abstract: New Mg-containing antimonide Zintl phases, Sr14MgSb11 and Eu14MgSb11, were synthesized from high-temperature solid-state reactions in Ta tubes at 1323 K. Their structures can be viewed as derived from the Ca14AlSb11 structure type, which adopt the tetragonal space group I41/acd (No. 142, Z = 8) with the cell parameters of a = 17.5691(14)/17.3442(11) A and c = 23.399(4)/22.981(3) A for the Sr- and Eu-containing compounds, respectively. The corresponding thermoelectric properties were probed, which demonstrated high potential of these compounds as new thermoelectrics for their very low thermal conductivity and moderate Seebeck coefficient. Magnetism studies and theoretical calculations were conducted as well to better understand the structure-and-property correlation of these materials.
25 citations
TL;DR: In this paper, the relationship between the lifetime of the K-Cs-Sb photocathode and the photocathodes temperature has been investigated, and the origin of the significant QE degradation at photoinjector temperatures over $70 was identified as the loss of cesium atoms from the k-Cs Sb photo-film.
Abstract: K-Cs-Sb bialkali antimonide photocathodes grown by a triple-element codeposition method have been found to have excellent quantum efficiency (QE) and outstanding near-atomic surface smoothness and have been employed in the VHF gun in the Advanced Photoinjector Experiment (APEX), however, their robustness in terms of their lifetime at elevated photocathode temperature has not yet been investigated. In this paper, the relationship between the lifetime of the K-Cs-Sb photocathode and the photocathode temperature has been investigated. The origin of the significant QE degradation at photocathode temperatures over $70\text{ }\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ has been identified as the loss of cesium atoms from the K-Cs-Sb photocathode, based on the in situ x-ray analysis on the photocathode film during the decay process. The findings from this work will not only further the understanding of the behavior of K-Cs-Sb photocathodes at elevated temperature and help develop more temperature-robust cathodes, but also will become an important guide to the design and operation of the future high-field rf guns employing the use of such photocathodes.
24 citations
TL;DR: In this paper, a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K2CsSb sputter target is presented, using in situ and operando X-ray characterizations.
Abstract: Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. In this paper, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K2CsSb sputter target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.
18 citations
TL;DR: A versatile method to fabricate antimonide-based heterostructures in membrane form is presented, and the potential of these materials to enable hybrid integration and elastic strain engineering is demonstrated.
Abstract: Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metal-coated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 μ m and lateral sizes from 24 × 24 μ m2 to 1 × 1 cm2. Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to ∼ 3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range.
13 citations
TL;DR: In this article, the influence of the AlSb layer thickness when this nucleation layer is grown at low temperature (400 °C) was investigated, and it was shown that there exists a correlation between the micro-twin density, the surface roughness and the broadening of the ω-scan GaSb peaks.
13 citations
TL;DR: In this paper, the results from semi-classical Monte Carlo simulations of electron photoemission (photoelectric emission) from cesium antimonide (Cs3Sb) and compare them with experimental results at 90 K and room temperature.
Abstract: We report on the results from semi-classical Monte Carlo simulations of electron photoemission (photoelectric emission) from cesium antimonide (Cs3Sb) and compare them with experimental results at 90 K and room temperature, with an emphasis on near-threshold photoemission properties. Interfacial effects, impurities, and electron-phonon coupling are central features of our Monte Carlo model. We use these simulations to predict photoemission properties at the ultracold cryogenic temperature of 20 K and to identify critical material parameters that need to be properly measured experimentally for reproducing the electron photoemission properties of Cs3Sb and other materials more accurately.
11 citations
TL;DR: In this article, CxKySb photocathodes were manufactured on a niobium substrate and evaluated over a range of temperatures from 300 to 77 K. Measurements of the photocathode spectral response provided a means to evaluate the photocpathode band gap dependence on the temperature and to predict the photoconductor quantum efficiency at 4 K, a typical temperature at which superconducting radio frequency photoguns operate.
Abstract: CsxKySb photocathodes were manufactured on a niobium substrate and evaluated over a range of temperatures from 300 to 77 K. Vacuum conditions were identified that minimize surface contamination due to gas adsorption when samples were cooled below room temperature. Measurements of the photocathode spectral response provided a means to evaluate the photocathode band gap dependence on the temperature and to predict the photocathode quantum efficiency at 4 K, a typical temperature at which superconducting radio frequency photoguns operate.
9 citations
TL;DR: In this article, a bi-alkali Rb-K-Sb photocathode has been installed in a high voltage DC gun at Cornell University and the intrinsic electron beam emittance was measured at different photon energies.
Abstract: High quantum efficiency alkali antimonide photocathodes have been grown over both stainless steel and glass substrates using sequential evaporation of Sb, K, Rb, and Cs. Quantum efficiencies well above 25% have been measured at 400 nm. A bi-alkali Rb-K-Sb photocathode grown on a stainless steel substrate has been installed in a high voltage DC gun at Cornell University and the intrinsic electron beam emittance was measured at different photon energies.
9 citations
TL;DR: In this paper, the epitaxy, energy bandgap, and structural and optical properties of GaSbN nanostructures in the dilute antimony (Sb) limit were studied.
Abstract: We have studied the epitaxy, energy bandgap, and structural and optical properties of GaSbN nanostructures in the dilute antimony (Sb) limit (Sb concentration < 1%). GaSbN nanowire structures are grown on a Si substrate by plasma-assisted molecular beam epitaxy. It is observed, both theoretically and experimentally, that the incorporation of a very small amount of Sb (<1%) in GaN can substantially reduce the energy bandgap of GaN from 3.4 eV to ∼2 eV. We have further demonstrated that emission wavelengths of GaSbN nanowires can be tuned from ∼365 nm to 600 nm at room-temperature by varying the Sb incorporation. Functional GaSbN nanowire light-emitting diodes are also demonstrated, which exhibit strong emission in the deep-visible spectral range.
01 Jan 2017
TL;DR: In this paper, the performance of GaInP/GaAs/GaInNAsSb solar cells grown by molecular beam epitaxy was investigated and an efficiency of 27% under AM0 conditions was demonstrated.
Abstract: Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm 2 /°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.
06 Aug 2017
TL;DR: In this paper, the highfrequency and static dielectric constants, the reflex index, the total optical electronegativity difference, the bulk modulus, the micro-hardness, the plasmon energy and the electronic polarizability of cubic zincblende boron-antimonide semiconductor have been estimated by using some empirical formulas.
Abstract: The high-frequency and static dielectric constants, the reflex index, the total optical electronegativity difference, the bulk modulus, the micro-hardness, the plasmon energy and the electronic polarizability of cubic zincblende boron-antimonide semiconductor have been estimated by using some empirical formulas. These parameters are analyzed by comparing them against the available experimental and theoretical data. In general, our obtained results agree well with other theoretical data from the literature.
Dissertation•
01 Jan 2017
TL;DR: In this paper, the authors presented a novel monolithic approach for making mid-IR imagers based on co-integration of midIR photodetectors with GaAs-based MESFETs on the same chip.
Abstract: The use of Mid-infrared (mid-IR) imagers has great potential for a number of applications in gas sensing and medical diagnostics, but so far for many of those non-defence fields it has been significantly limited by their high price tag. One of the reasons behind the great cost of mid-IR imagers is that most of them need to operate at cryogenic temperatures. Thanks to more than half a century of research, state-of-the-art mid-IR photodetectors have finally achieved premium detection performance without the need for cryogenic cooling. Some of them have even demonstrated very promising results, suggesting room temperature operation is on the horizon. As a result, the cost associated with cooling equipment has been significantly suppressed. However, most mid-IR imagers are still based on hybrid technologies needing a great number of die-level process steps and being prone to connection failure during thermal cycles. The high manufacturing cost this entails is also preventing a wider diffusion of mid-IR imagers. Currently, there is still a lack of an effective monolithic approach able to achieve low-cost mass production of mid-IR imagers in the same way as monolithic integration has been widely used for imagers working at visible wavelengths.
This thesis presents a novel monolithic approach for making mid-IR imagers based on co-integration of mid-IR photodetectors with GaAs-based MESFETs on the same chip. The initial focus of the project was the development of the fabrication steps for delivery of prototype devices. In order to achieve monolithic fabrication of pixel devices made in either indium antimonide (InSb) or indium arsenide antimonide (InAsSb) on a gallium arsenide (GaAs) substrate, various highly controllable etch processes, both wet and dry etch based, were established for distinct material layers. Moreover, low temperature annealed Ohmic contacts to both antimonide-based materials and GaAs were used. The processing temperatures used never exceeded 180˚C, preventing degradation of photodetector performance after fabrication of transistors, thus avoiding well-known thermal issues of InSb fabrication. Furthermore, an intermediate step based on polyimide was developed to provide a smoothing section between the lower MESFET and upper photodetector regions of the pixel device. The polyimide planarisation enabled metal interconnects between the fabricated devices regardless of the considerable etch step (> 6 µm) created after multiple mesa etches. Detailed electrical and optical measurements demonstrated that the devices were sensitive to mid-IR radiation in the 3 to 5 µm range at room temperature, and that each pixel could be isolated from its contacts by switching off the co-integrated MESFET.
Following the newly developed fabrication flow, InSb-based mid-IR imaging arrays (in two sizes, 4×4 and 8×8) are presented here for the first time, with pixel addressing achieved by monolithically integrated GaAs MESFETs. By demonstrating real-time imaging results obtained from these array devices at room temperature, implementation of a new type of monolithic focal plane array for mid-IR imaging has been confirmed. The device is suitable for further scaling (up to 64×64 pixel and beyond) and potential commercialisation. More importantly, the monolithic approach developed in this work is very flexible, as a number of III-V materials with mid-IR detecting capabilities can be grown on GaAs substrates, meaning alternative semiconductor layer structures could also be investigated in the near future.
TL;DR: The ternary antimonide YIrSb was synthesized from the binary precursor YIr and elemental antimony by a diffusion controlled solid-state reaction as mentioned in this paper, where single crystals were obtained by a flux technique with elemental bismuth as an inert solvent.
Abstract: The ternary antimonide YIrSb was synthesized from the binary precursor YIr and elemental antimony by a diffusion controlled solid-state reaction. Single crystals were obtained by a flux technique with elemental bismuth as an inert solvent. The YIrSb structure (TiNiSi type, space group Pnma) was refined from single-crystal X-ray diffractometer data: a = 711.06(9), b = 447.74(5), c = 784.20(8) pm, wR2 = 0.0455, 535 F2 values, 20 variables. 89Y solid state MAS NMR and 121Sb Mossbauer spectra show single resonance lines in agreement with single-crystal X-ray data. YIrSb is a Pauli paramagnet.
01 Mar 2017
TL;DR: In this article, Antimonide-based HEMTs with 50 nm gate length have been simulated with an In 0.1 As 0.9 Sb channel and Al 0.
Abstract: In this paper the, Antimonide-based HEMTs have been simulated with an In 0.1 As 0.9 Sb channel and Al 0.1 In 0.9 Sb barrier and back-barriers. These HEMTs with 50 nm gate length exhibit improved electron density, mobility, DC and analog/RF performances.
Dissertation•
30 Dec 2017
TL;DR: In this article, an introduction to LITHIUM ION and SODIUM Ion BATTERY ANODES is given. But the main focus of the article is on the performance of COPPER ANTIMONIDE and NANOWIRE ARRAY.
Abstract: ...................................................................................................ii CHAPTER 1: AN INTRODUCTION TO LITHIUM ION AND SODIUM ION BATTERIES ....................................................................................................................1 CHAPTER 2: ANTIMONY AND METAL ANTIMONIDES FOR LITHIUM ION AND SODIUM ION BATTERY ANODES......................................................................1η CHAPTER 3: LITHIUM ION ANODE PERFORMANCE OF ELECTRODEPOSITED THIN FILM COPPER ANTIMONIDES...........................................................................81 CHAPTER 4: REVERSIBLE CONVERSION OF COPPER ANTIMONIDE WITH SODIUM IONS ENABLED BY FLUOROETHYLENE CARBONATE.......................................119 CHAPTER 5: ELECTRODEPOSITED ZN4SB3 THIN FILMS FOR SODIUM-ION BATTERY ANODES....................................................................................................132 CHAPTER 6: COPPER ANTIMONIDE NANOWIRE ARRAY LITHIUM ION ANODES STABILIZED BY ELECTROLYTE ADDITIVES .....................................................1θ1 CHAPTER 7: EFFECTS OF COMPOSITION AND MORPHOLOGY ON THE ELECTROCHEMICAL PERFORMANCE OF COPPER ANTIMONY ALLOY NANOWIRE ARRAYS....................................................................................................185 CHAPTER 8: DEEP EUTECTIC SOLVENTS AS A MEDIUM FOR THE ELECTROCHEMICAL SYNTHESIS OF I NTERMETALLIC COMPOUNDS...................20θ
Patent•
05 Apr 2017
TL;DR: In this article, an antimonide second class superlattice infrared detector with a planar structure and a preparation method is presented, where an energy zone composition and material combination of the pin type detector are specially designed to ensure photoproduction carrier collection not to be blocked by barriers, and effectively ensuring and improving infrared detector work performance.
Abstract: The invention discloses an antimonide second class superlattice infrared detector with a planar structure and a preparation method thereof; the antimonide second class superlattice infrared detector comprises a lower electrode, an InAs/GaSb or InAs/InAsSb superlattice absorbed layer, an InAs/GaSb superlattice or GaSb or GaAsSb contact layer, and an upper electrode arranged in sequence in a set direction; a p type zone is also locally formed in the contact layer or the contact layer and the superlattice absorbed layer; the invention also discloses an infrared detector preparation method; the antimonide second class superlattice infrared detector uses the planar structure to prevent surface leak current caused by etching in a normal mesa structure, thus reducing dark current and noises of the infrared detector, and simplifying the manufacture technology of the antimonide second class superlattice infrared detector. In addition, an energy zone composition and material combination of the pin type detector are specially designed, thus ensuring photoproduction carrier collection not to be blocked by barriers, and effectively ensuring and improving infrared detector work performance.
Patent•
23 Mar 2017
TL;DR: In this article, a tunnel junction for a semiconductor device is described and a p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb).
Abstract: A tunnel junction for a semiconductor device is disclosed. The tunnel junction includes a n-doped tunnel layer and a p-doped tunnel layer. The p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb). A semiconductor device including the tunnel junction with the p-doped tunnel layer constructed of AlGaAsSb is also disclosed.
01 Jan 2017
Patent•
13 Oct 2017
TL;DR: In this article, a two-phase magneto-sensitive composite consisting of indium, antimony, and manganese was obtained by the thermal treatment of the two materials at the temperature of 550 to 800°C.
Abstract: FIELD: physics.SUBSTANCE: magneto-sensitive composite consists of indium, antimony, and manganese and is a two-phase system corresponding to the formula (InSb)(MnSb), where x=0.04-0.1. This system is obtained by the thermal treatment of indium antimonide and manganese antimonide at the temperature of 550 to 800°C.EFFECT: invention allows to obtain a magneto-sensitive composite with a high value of the magneto-resistance in magnetic fields from 0,15 T due to the increased content of manganese antimonide and high values of the Curie temperature from 540 to 570 K.1 dwg, 1 ex
Patent•
29 Jun 2017
TL;DR: In this article, a method for the industrial manufacture of gallium antimonide with a large specific electrical resistance was presented, where the content of antimony atoms in the gas phase is exceeded in relation to the content in the gallium phase, 20-50 times.
Abstract: FIELD: electricity.SUBSTANCE: in the method of manufacturing gallium antimonide with a large specific electrical resistance including growing gallium antimonide by epitaxy on a substrate of gallium antimonide, the process of growing gallium antimonide is carried out by gas phase epitaxy from organometallic compounds at a temperature in the range from 550 to 620°C, when the content of antimony atoms is exceeded in relation to the content of gallium atoms in the gas phase, 20-50 times.EFFECT: creation of a method for the industrial manufacture of GaSb with a large specific electrical resistance.1 cl
Patent•
04 Apr 2017TL;DR: In this paper, a superlattice (SL) photodetector is considered, and each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs).
Abstract: In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.
TL;DR: Based on the analysis of band structure, a correction factor is introduced in the InxGa1−xAsySb1−y bandgaps calculation with taking into account the spin-orbit coupling sufficiently as mentioned in this paper.
Abstract: In order to meet the design requirements of the high-performance antimonide-based optoelectronic devices, the spin–orbit splitting correction method for bandgaps of Sb-based multi-element alloys is proposed. Based on the analysis of band structure, a correction factor is introduced in the InxGa1−xAsySb1−y bandgaps calculation with taking into account the spin–orbit coupling sufficiently. In addition, the InxGa1−xAsySb1−y films with different compositions are grown on GaSb substrates by molecular beam epitaxy (MBE), and the corresponding bandgaps are obtained by photoluminescence (PL) to test the accuracy and reliability of this new method. The results show that the calculated values agree fairly well with the experimental results. To further verify this new method, the bandgaps of a series of experimental samples reported before are calculated. The error rate analysis reveals that the α of spin–orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the common method. It means this new method can calculate the antimonide multi-element more accurately and has the merit of wide applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.
Patent•
22 Feb 2017
TL;DR: In this paper, the authors revealed the upper semiconductor structure of an insulator and a preparation method of the upper-semiconductor structure, which comprises the following steps: firstly, sequentially forming an antimonide transition layer and an Antimonide semiconductor layer on the upper surface of a substrate, so as to obtain a first compound body; secondly, performing ion implantation treatment on the ion body, wherein implanted ions contain hydrogen ions; thirdly, performing bonding treatment on both the substrate and the substrate, where the substrate is provided with an insulating layer
Abstract: The invention discloses an upper semiconductor structure of an insulator and a preparation method of the upper semiconductor structure The method comprises the following steps: firstly, sequentially forming an antimonide transition layer and an antimonide semiconductor layer on the upper surface of a substrate, so as to obtain a first compound body; secondly, performing ion implantation treatment on the first compound body, wherein implanted ions contain hydrogen ions; thirdly, performing bonding treatment on the first compound body and the substrate so as to obtain a second compound body, wherein the upper surface of the substrate is provided with an insulating layer, and the insulating layer makes contact with the antimonide semiconductor layer in the bonding treatment process; fourthly, performing stripping treatment on the second compound body so as to respectively obtain a third compound body and an upper semiconductor structure of the insulating layer The method is simple in operation steps and is lower in requirement on the equipment; in addition, the limitation for the upper semiconductor structure of the insulator due to over-small size of a wafer when the antimonide wafer is used for preparing can be avoided
30 Aug 2017
TL;DR: In this paper, an antimonide-based resonant tunneling photodetectors with GaSb/AlAsSb double barrier structures and pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAs Sb are shown.
Abstract: We present antimonide-based resonant tunneling photodetectors with GaSb/AlAsSb double barrier structures and pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. Due to the incorporation of GaInSb and GaAsSb prewell emitters, room temperature resonant tunneling with peak-to-valley current ratios of up to 2.4 are shown. The room temperature operation is attributed to the enhanced Γ-Lvalley energy separation and consequently a re-population of the Γ-conduction band of the ternary compound emitter prewell with respect to bulk GaSb. By integration of a quaternary absorption layer, RTDs photodetectors with cut-off wavelengths up to 3 μm have been realized.
Patent•
26 Apr 2017
TL;DR: In this article, a sample was transferred radioactive source in the starting zone termohromatograficheskoy silica column and it was heated in an inert gas stream, such as helium, comprising a pair of antimony Calcination in the presence of trace amounts of silver reagent produced volatile antimonide, which was carried in the gas stream from the start area to the deposition area.
Abstract: FIELD: chemistrySUBSTANCE: metallic mercury cadmium or high energy protons irradiated target material and distilled under a hydrogen atmosphere release spalogennyh nonvolatile products comprising silver radioisotopes on the surface of quartz The resultant sample was transferred radioactive source in the starting zone termohromatograficheskoy silica column and it was heated in an inert gas stream, such as helium, comprising a pair of antimony Calcination in the presence of trace amounts of silver reagent produced volatile antimonide, which is carried in the gas stream from the start area to the deposition area Isolation of silver radioisotopes is selective, because Related silver radioisotopes other elements formed during the irradiation target cadmium, do not form volatile antimonides Use of mercury as the target results in the formation of rhenium volatile antimonide, volatility which exceeds considerably the volatility of the desired product, whereby overlapping zones of the two compounds adsorbed slightlyEFFECT: increased security personnel3 dwg, 2 ex