Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
Papers published on a yearly basis
Papers
More filters
TL;DR: A high-power optically pumped semiconductor vertical external cavity surface emitting laser operating at 2-mum wavelength demonstrating the high potential of antimonide material for VECSEL fabrication is reported.
Abstract: We report a high-power optically pumped semiconductor vertical external cavity surface emitting laser operating at 2-mum wavelength. The gain material consisted of 15 GaInSb quantum-wells placed within a three-lambda GaSb cavity and grown on the top of an 18-pairs AlAsSb/GaSb Bragg reflector. For thermal management we have used a transparent diamond heat spreader bonded on the top of the structure. When cooled down to 5 degrees C, the laser emitted up to 1 W of optical power in a nearly diffraction-limited Gaussian beam demonstrating the high potential of antimonide material for VECSEL fabrication.
47 citations
TL;DR: In this article, the antimonide-based long-wavelength VCSEL was used for room-temperature continuous-wave operation with 1.2 mW power output at 1266 nm.
Abstract: Room-temperature continuous-wave operation of antimonide-based long wavelength VCSELs is demonstrated, with 1.2 mW power output at 1266 nm, the highest figure reported so far using this material system. Singlemode powers of 0.3 mW at 10/spl deg/C and 0.1 mW at 70/spl deg/C and sidemode suppression ratios up to 42 dB are also achieved.
47 citations
46 citations
TL;DR: In this paper, a study of 10 graded-gap W-structured superlattices (GG-Ws) is presented, with 50% power responsivity cutoffs from 9μm to 13.4μm.
Abstract: The recent development of graded-gap W-structured superlattices (GG-Ws) has led to a substantial improvement in the dark current performance of infrared photodiodes implemented with type-II superlattices (T2SLs). A study of ten GG-W photodiode wafers with 50% power responsivity cutoffs from 9 μm to 13.4 μm is presented. Dark current performance has increased by a factor of 10 over that of previous type-II structures, without degrading quantum efficiency. In relation to HgCdTe (MCT) based photodiodes, several samples in the study show effective dynamic-resistance-area products close to the MCT trend line for diffusion-limited R
0
A.
46 citations
45 citations