Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Multialkali Photocathode (S20) Optimization : Use In Streak Camera Tubes And Image Intensifiers Associated

Abstract: Streak camera tubes have been developed with alkali antimonide photocathodes. At the be-ginning it was mainly monoalkali type S 9 or S 11 (caesium antimonide). These cathodes have a good sensitivity in blue and are currently used in photomultipliers for nuclear detec-tion. From theoretical and experimental results obtained in laboratory (Laboratoires d'Electronique et de Physique Appliquee - LEP), development studies on multialkali antimonide thin films have been recently carried out on industrial equipments at the Hyperelec factory. It is now possible to produce with a good reproducibility thin films with high red sensitivity. Particularly the use of transfer technique allows to obtaina very high sensitivity in the bandwidth of 800 - 850 nm. This characteristic is very important for calibration of streak camera tubes because it is made by using LED or ultra fast laser diodes emitting in the red. It is also important for increasing the detection sensitivity when streak tubes are used in connection with long fiber optics which transmit preferably red signal. The paper will describe the main parameters on which it is possible to act and the photo-cathode results expected on streak camera tubes processed by transfer technique.© (1985) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Solar cell of aluminum antimonide transparent film

Abstract: The utility model discloses an aluminum antimonide transparent membrane solar cell and belongs to a structure design of semiconductor membrane solar cell. The structure is the glass/CTO/ZTO/CdS/AlSb/single-walled carbon nanotube coat/Ni/Al/MgF2, namely a transparent conductive membrane CZT is deposited on the glass, and a buffer layer ZTO is deposited, then a n-type window layer CdS and a p-type absorption layer AlSb are deposited, subsequently the single-walled carbon nanotube coat is deposited for serving as the transparent and conductive back contact, finally a Ni/Al gate line and a MgF2 anti-reflecting layer are deposited. By adopting the structure design, the utility model can remarkably increase the photoelectric conversion efficiency of the membrane solar cell, simultaneously, the solar cell with the structure can permeate the solar light with the wavelength of more than 800nm in the higher transmittance and consequently effectively utilize the solar light by the bottom cell of the stacked solar cell, thus the transparent cell has the important significance on developing the stacked solar cell.

Simulations of indium arsenide antimonide (InAs 0.91 Sb 0.09 ) monovalent barrier-based thermophotovoltaic cells

Abstract: Thermophotovoltaics (TPVs) have attracted interest due to their ability to harvest infrared radiation and produce usable energy. The focus of this research is the characterization of novel TPV cell designs which employ a barrier layer in the pn junction, creating a p-B-n (p-type, barrier, n-type) structure. First suggested for use with photodetectors, the monovalent barrier is designed to block only one carrier; it exists in either the valence band or conduction band but not both. This monovalent band is accomplished by careful selection of a wide bandgap material in place of, or in addition to, the intrinsic layer. The use of a barrier layer enables these p-B-n cells to operate at longer wavelengths, higher efficiencies, and higher operating temperatures. p-B-n designs utilizing InAs 0.91 Sb 0.09 lattice matched to GaSb were examined. Barrier and absorber materials were researched and simulations were performed to determine optimal band alignments as well as to perform an initial optimization of the design.

Antimonides having novel combinations of properties

Abstract: The invention relates to thermoelectric generators or Peltier systems comprising an antimonide as a semiconductor material. According to said method, a substituted antimonide is used, in which the crystal lattice of the metal antimonides is partially substituted with sulfides, selenides and/or tellurides of the metals antimony, silicon, germanium, zinc, lead, arsenic and/or bismuth.

Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique

Abstract: Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk and surface recombination parameters in doubly capped, 0.50–0.59-eV, p-type InGaAsSb epitaxial materials. The InGaAsSb lifetime structures with variable active-layer thicknesses are used to extract the surface recombination velocity (SRV), while samples with different active-layer doping concentrations have been used to determine the Auger and radiative recombination coefficients. The RF photoreflectance measurements and analysis are compatible with a radiative recombination coefficient (B) of approximately 3×10−11 cm3/s, Auger coefficient (C) of 1×10−28 cm6/s, and SRV of ∼103 cm/s or lower for 0.50–0.59 eV, doubly capped, p-type InGaAsSb epitaxial layers.