Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Designing method of InAs/GaSb superlattice electronic structure

Abstract: The invention discloses a designing method of an InAs/GaSb superlattice electronic structure with an M-shaped barrier layer, which belongs to the technical field of electronic structure design of plane infrared probe materials The InAs/GaSb superlattice electronic structure is made of a material of a focal plane infrared provided with the InAs/GaSb superlattice electronic structure An experience tight binding method is adopted, tight binding parameters are determined through non-linear least square fitting, and design of the InAs/GaSb superlattice electronic structure with the M-shaped barrier layer with Al (Ga) Sb is carried out Simultaneously, influence of an Al component on superlattice photoelectric performance is studied, and design of the M-shaped InAs/GaSb superlattice with an AlGaSb barrier layer is achieved Molecular beam epitaxy growing technological conditions are simplified, and component fluctuation caused in a growing process is reduced The designing method of the InAs/GaSb superlattice electronic structure has an important effect of promoting application of antimonide semiconductor low dimensional neterogeny structure in the field of photoelectric detection and thermophotovoltaic battery

Thermoelectric Properties of Some Phosphide Skutterudite Materials

Abstract: The synthesis and thermoelectric properties of CoP3, CeFe4P12 and CeRu4P12 have been investigated. These compounds were made by recrystallization from Sn flux. The samples were analyzed by x-ray diffraction and electron microprobe analysis for phase purity. Electrical resistivity and Seebeck coefficient measurements showed that all three compounds are p-type semiconductors, in agreement with theoretical predictions and previous literature results. The large difference between the thermal conductivity of the binary and filled compounds can be primarily attributed to the additional phonon scattering by Ce atoms rattling inside the empty cages. The properties of the phosphide compounds are compared to their antimonide analogs and discussed in order to obtain further insights into the transport properties of skutterudite materials. Guidelines for optimizing thermoelectric properties of this class of compounds are also provided.

GaSb-based diode lasers with asymmetric coupled quantum wells

Abstract: Asymmetric tunnel coupled quantum wells with built-in resonant second order nonlinearity were designed and fabricated within the antimonide material system. The quantum wells demonstrated intensive photo- and electroluminescence responses associated with optical transitions between two tunnel-split conduction band subbands and one valence band subband. The thickness of the tunnel barrier defined the optical gain bandwidth and resonance energy for the difference frequency generation. The test diode lasers based on asymmetric quantum wells with a conduction subband splitting of about 25 meV operated near 2.1 μm at room temperature and demonstrated high differential gain and excellent performance parameters. The experimental modal gain spectra showed relatively flat top and an extended bandwidth at high pumping levels.