Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Advances in infrared antimonide technology

Abstract: Recently, significant advances have been made in both the application and production of the narrow gap, antimonide compound semiconductors. Growth of InSb and GaSb at 3 and even 4 inch diameters has been achieved with good homogeneity and acceptable defect density. Advances are being made to achieve a wafer surface finish suitable for direct epitaxy. New binary applications for large-area focalplane detector arrays, high resistivity substrates and thermophotovoltaics, and for the ternary (Ga,In)Sb are discussed.

In situ characterization of alkali antimonide photocathodes

Abstract: Alkali antimonide photocathodes are a prime candidate for use in high-brightness photoinjectors of free electron lasers and 4th generation light sources. These materials have complex growth kinetics - many methods exist for forming the compounds, each photocathode having different grain size, roughness, and crystalline texture. These parameters impact the performance of the cathodes, including quantum efficiency (QE), intrinsic emittance and lifetime. In situ analysis of the growth of these materials has allowed investigation of correlations between the growth parameters and the resulting cathode performance. This work explores the relationship between the crystallinity of the initial antimony film and the roughness of the final cathode. Two growth methods are compared ‐ a “traditional” recipe which uses a crystalline initial antimony film and a “yo-yo” process which builds the cathode through an iterative process using sub-crystalline antimony layers. The traditional method provides exemplary QE (7.5% @ 532 nm), but an exceptionally rough surface. The “yo-yo” produces a somewhat lower final QE (4.9% @ 532 nm) but a much smoother surface, as observed by grazing incidence small angle x-ray scattering (GISAXS).

Photoemissive cathode for high current density photoelectron generators

Abstract: A photoemissive cathode (16) for an electron beam generator suitable for direct-write semiconductor lithography applications comprises a light transmissive substrate (40), e.g. of quartz, glass, or sapphire, onto which is deposited an optically semitransparent, electrically conductive film (46), e.g. of chromium. This film (46) in turn is coated with a thin layer (48) of a photoemissive substance comprising cesium antimonide, sodium potassium antimonide, cesiated gallium phosphide, or cesiated gallium arsenide phosphide, and this photoemissive layer (48) will emit an intense and substantially monochromatic beam of electrons upon illumination with laser light of appropriate wavelength and energy. As shown, a thick film 42 of chromium is included. Steps for making the cathode are described.

A novel surface preparation methodology for epi-ready antimonide based III-V substrates

Abstract: Surfaces of GaSb substrates currently available from various commercial vendors are nowhere close to device grade GaAs, Si or InP wafer surfaces. Hence epitaxial growth and device fabrication on as-received commercial substrates poses significant difficulties amongst antimonide based researchers. Antimonide based materials are known to have poor surface oxide quality and not so well understood chemical reactions with various chemicals used to remove the oxides prior to growth. There are no existing reports on the detailed recipe for the preparation of "atomically flat and clean" surfaces that works on wafers obtained from various commercial vendors. This paper presents a detailed recipe for obtaining atomically flat and clean GaSb surfaces, irrespective of the initial polishing source. The same recipe (with slight modification) has been found to be successful with other III-V and II-VI compounds. The novel surface preparation process developed in our laboratory includes, chemical-mechanical polishing using an agglomerate-free sub-micron alumina slurry on a soft pad such as velvet, surface cleaning using dilute ammonium or potassium hydroxide-H2O solution and surfactant or glycerol, surface degreasing using organic solvents, oxide desorption using HCl-H2O and HF-H2O mixtures, mild chemical etching using ammonium sulfide and a final rinse in high purity deionized (DI) water and methanol. Using this recipe, we have been able to achieve surfaces with atomic flatness (RMS surface roughness close to 0.5 nm over a 10 x 10 mm2) and extremely clean surfaces, irrespective of the initial contamination or the sources of the wafers. Results of wafer surfaces before and after polishing using our recipe will be presented.© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.