Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Physics and technology of antimonide heterostructure devices at SCD

Abstract: SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures, grown on GaSb. The XBn/XBp family of detectors enables diffusion limited behavior with dark currents comparable with MCT Rule-07 and with high quantum efficiencies. InAsSb/AlSbAs based XBn focal plane array detectors with a cut-off wavelength of ~ 4.1 μm and formats presently up to 1024×1280 / 15 μm, operate with background limited performance up to ~175 K at F/3. They have a sensitivity and image quality comparable with those of standard InSb detectors working at 77K. In an XBp configuration, the same concept has been applied to an InAs/GaSb type II superlattice (T2SL) detector with a cut-off wavelength of ~ 9.5 μm, which operates with background limited performance up to ~100 K at F/2. In order to design our detectors effectively, a suite of simulation algorithms was developed based on the k ⋅ p and optical transfer matrix methods. In a given T2SL detector, the complete spectral response curve can be predicted essentially from a knowledge of the InAs and GaSb layer widths in a single period of the superlattice. Gallium free T2SL detectors in which the GaSb layer is replaced with InAs1-xSbx (x ~ 0.15-0.5) have also been simulated and the predicted spectral response compared for the two detector types.

CW, High Power, Single-Longitudinal-Mode Operation of an Optically Pumped Mid-IR DFB Laser

Abstract: A CW, single-longitudinal-mode, optically pumped mid-IR distributed-feedback antimonide-based type-II quantum-well laser at 3.62 mum is demonstrated. Record high output powers, > 300 mW per side, and tunability of 5.5 nm are obtained at 77 K.

Understanding the Growth Dynamics Cs-Sb Thin Films via In-Situ Characterization Techniques: Towards Epitaxial Alkali Antimonide Photocathodes

Abstract: Alkali antimonide photocathodes, such as Cs3Sb, have attractive properties, such as low emittance and high quantum efficiency, which makes them excellent candidates for next-generation high-brightness electron sources. A large number of studies in literature focus on quantum efficiency and lifetime, and fewer report chemical and structural analysis, despite the latter ultimately determine the brightness at the photocathode. Epitaxial, single-crystalline films would allow to study the intrinsic properties of alkali antimonide photocathodes and to optimize them for maximum brightness, but this goal remains elusive. A strong limiting factor is the extreme air sensitivity, preventing ex-situ structural and chemical analysis. We used vacuum suitcase transfer to study the morphology of Cs3Sb samples grown on different substrates with scanning tunneling microscopy. Samples grown on SiC substrates show 10 times larger islands than samples grown on other substrates in the same conditions. Further studies with in situ reflection high energy electron diffraction demonstrate favorable growth dynamics on SiC, making it a preferable substrate for epitaxial growth of Cs3Sb.

Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD

Abstract: Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained Structural, optical and electrical characterisation data are shown and discussed Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices

Antimonide-based approaches for long-wavelength VCSELs

Abstract: We demonstrate an optically-pumped all-epitaxial 1.56 /spl mu/m VCSEL on an InP substrate which combined a simple InGaAs active region with AlAsSb-AlGaAsSb mirror stacks. The AlGaAsSb material system is well-suited for fabrication of high-reflectivity DBRs due to a significantly higher refractive index contrast than achievable using InAlGaAsP, particularly at 1.55 /spl mu/m.