Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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31 Aug 2000TL;DR: In this article, the beam former is monolithically integrated in the semiconductor chip and is made of an aluminum-containing material, preferably a material system made of indium-gallium-aluminum antimonide, gallium- aluminum-arsenide antimonides or indium aluminum -arsenic antimonyide.
Abstract: Semiconductor chip (100) comprises a semiconductor laser element (102); and a beam former (103) integrated in the chip for forming a laser beam emitted from the element. The beam former is arranged in the outlet direction of the laser beam so that the beam is guided through the former. An Independent claim is also included for a process for the production of a semiconductor chip. Preferred Features: The beam former is monolithically integrated in the semiconductor chip and is made of an aluminum-containing material, preferably a material system made of indium-gallium-aluminum antimonide, gallium-aluminum-arsenide antimonide or indium-aluminum-arsenic antimonide.
2 citations
01 Jan 1966
TL;DR: Magnesium antimonide and magnesium bismuthide as materials for power generating thermocouples were used in this article for power generation thermocouple in the early 1990s.
Abstract: Magnesium antimonide and magnesium bismuthide as materials for power generating thermocouples
2 citations
03 Feb 2011-Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
TL;DR: In this paper, the pN heterojunction is composed of a 30 nm thick p-type In0.27Ga0.73Sb alloy and a 130 nm thick In 0.41Sb0.59 n-layer.
Abstract: High frequency pN heterojunction diodes with cutoff frequencies over 1 THz have been fabricated using narrow bandgap high-mobility semiconductors. The pN heterojunction is composed of a 30 nm thick p-type In0.27Ga0.73Sb alloy and a 130 nm thick In0.69Al0.31As0.41Sb0.59 n-layer. A high-mobility n-type InAs0.66Sb0.34 contact layer is used to connect the mesa diode to a metal Ohmic contact. These alloys have a lattice constant a0=6.2 A and are grown on semi-insulating GaAs, a0=5.65 A, using a buffer consisting of 1 μm of In0.21Ga0.19Al0.6Sb with a0=6.2 A and 0.5 μm of Ga0.35Al0.65Sb with a0=6.12 A.
2 citations
01 Mar 2017
TL;DR: In this article, Antimonide-based HEMTs with 50 nm gate length have been simulated with an In 0.1 As 0.9 Sb channel and Al 0.
Abstract: In this paper the, Antimonide-based HEMTs have been simulated with an In 0.1 As 0.9 Sb channel and Al 0.1 In 0.9 Sb barrier and back-barriers. These HEMTs with 50 nm gate length exhibit improved electron density, mobility, DC and analog/RF performances.
2 citations
08 May 2005
TL;DR: In this article, a distributed Bragg reflector at 1.55 mum grown monolithically by metalorganic vapor phase epitaxy is reported, which achieves a reflectivity of 99.5% over the 2 inch wafer surface.
Abstract: A distributed Bragg reflector at 1.55 mum grown monolithically by metalorganic vapor-phase epitaxy is reported. The DBR composed of 24 AlGaAsSb/InP periods achieves a reflectivity of 99.5% over the 2 inch wafer surface
2 citations