Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Comparative study of subthreshold characteristics of different antimonide-based and nitride-based dual material gate (DMG) HEMTs

Abstract: As MOSFET technology reaching its limits, new devices like HEMTs (high electron mobility transistors) are gradually gaining more interests. HEMTs have high mobility due to reduce scattering for the spatially separated doped region. But as their dimensions reach the nano-scale region, different SCEs (short channel effects) and carrier transport inefficiency creep in. To solve these problems a new structure, DMG (dual material gate) HEMT has been proposed. In this paper we have shown comparison of subthreshold characteristics among different antimonide-based DMG HEMTs and between antimonide-based and nitride-based DMG HEMTs. We have found that as the band-offsets in the heterojunction become deeper, the effect of using DMG over SMG (single material gate) reduces in case of antimonide-based HEMTs. Our work also shows that DMG structure is more effective in reducing SCEs for antimonide-based HEMTs than nitride-based HEMTs, while nitride-based DMG HEMTs give more efficient carrier transport than its antimonide-based counterpart.

High performance optically pumped antimonide mid-infrared lasers

Abstract: In this paper, we briefly review optically pumped type-II "W" quantum-well semiconductor lasers that emit in the midinfrared wavelengths. In addition, we demonstrate on-chip unstable resonator cavity devices that exhibit excellent lateral beam quality.

Fabrication of Nanotips and Microbeams in Antimonide Based Semiconductor Material using Bromine Ion Beam Assisted Etching

Abstract: Antimonide-based compound semiconductors have emerged as the materials of choice for fabricating high-speed low-power electronics and electro-optics for applications requiring miniaturization and portability. In this work Br-IBAE is shown to be an anisotropic antimonide etching technique that is capable of generating novel structures as well as performing standard etching tasks. When etching less than optimally chemical-mechanical polished (111) InSb wafers, sharp-tipped cone structures with tip radii of the order of less than 60 nm are produced. These structures may be ideally suited for the development of field-emission devices, where small tip radii are required for useful emission currents. The anisotropic nature of the IBAE technique allows one to etch channels in the surface at angles up to 70° from perpendicular, making the fabrication of microbeams feasible. Using an angled sample holder, the first etch undercuts the masked beams from one side. The sample is then removed and realigned so as to undercut the beams from the other side. The triangular shaped microbeams are left suspended from either one or both ends. Using a combination of atomic force microscopy and mechanical engineering beam analysis techniques, the elastic parameters of the material can be measured. The microbeams can be aligned along various directions on the surface to investigate anisotropic characteristics. This is particularly important for determining the mechanical characteristics of materials that can only be grown in thin epitaxial layers, such as quaternary antimonide-based compound semiconductors.

Bidirectional antimonide laser diodes: application to the development of an infrared probe based on absorption spectroscopy

Abstract: We present a study of a sensor probe based on tunable diode laser absorption spectroscopy, using antimonide-based diode lasers emitting at 2.3 and 2.6 μm. The lasers were fabricated by molecular beam epitaxy in the IES laboratory. The active regions are based on InGaAsSb/AlGaAsSb quantum wells grown on a GaSb(N) substrate. The diode lasers operate at room temperature in a continuous wave (CW) regime and exhibit 5 mW of emitted power. A linear optical setup using the two emitting facets of the diode lasers was developed. By using a second derivative detection by wavelength modulation spectroscopy, we obtained a CH4 detection limit of 9 ppm m. The sensor is designed to be used in soil and to measure CH4, CO2 and H2O, which are important constituents of the soil atmosphere generated by anaerobic digestion, microbial respiration or water transfer.