Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Antimonide quantum dots enable novel photonic devices

Abstract: Long-wavelength (ie, near-IR) light-emitting devices, especially 13and 155μm lasers, are needed for ubiquitous fiberoptic communication networks To achieve low-cost, low-power consumption and high performance from such light sources, we would like to fabricate them on low-cost, high-quality semiconductor substrates such as gallium arsenide and silicon wafers But the crystal lattice mismatch between these substrates and narrow-energy-bandgap semiconductors makes it difficult to obtain near-IR light-emitting materials using normal fabrication techniques Recently, some approaches for creating these luminescent materials have been proposed As one method, the epitaxial growth of nitride-based semiconductors—such as GaInNAs— on GaAs substrates is being widely investigated SiGe, silicon quantum dots (QDs), and III-V semiconductors bonded directly to Si are also being studied to find a photonics technology that allows us to fabricate light-emitting materials on Si However, obtaining optimized material characteristics for highintensity and near-IR luminescence with these material fabrication techniques is also difficult To avoid these difficulties, we used nanostructured semiconductors, such as a quantum dots (QDs), to create near-IR luminescent material on GaAs and Si substrates Quantum dots have very interesting characteristics, including quantum confinement of carriers and high luminescent efficiency In addition, QD structures can be grown without requiring lattice matching between the QDs and the substrate Without this restriction, we are free to use antimonide-based III-V semiconductor materials, which have very narrow bandgaps These materials were not used in the past because of the very large lattice mismatch (more than 10%) between Sb-based materials and GaAs or Si Therefore, we created Sb-based III-V semiconductor QD structures (ie, the Sb atoms are included in Figure 1 Atomic force microscope image of Sb-based quantum dots (QDs) on a GaAs surface

Antimonide interband and intersubband mid-IR and terahertz lasers

Abstract: Antimonide semiconductor lasers for the mid-infrared and terahertz spectral regions are considered. It is predicted that optically pumped interband type-II lasers will be advantageous at long wavelengths, out to λ≈100 μm . In the mid-IR, antimonide intersubband lasers should have higher gains and longer carrier lifetimes than InGaAs/InAlAs quantum cascade lasers, and hence have prospects for room-temperature cw operation. Spin-polarized antimonide intersubband lasers with applied magnetic fields are projected to display room-temperature cw emission at λ=16 μm .

MBE growth and fabrication of 2.Xμm InGa(As)Sb/AlGaAsSb laser

Abstract: 2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.

Detecting ammonia and methane with antimonide lasers

Abstract: Type I antimonide diode lasers operate in the 2000 to 2800 nm spectral region. Compared to the 1300 to 1650nm communications spectral band, the antimonide band can access stronger molecular transitions and thus potentially achieve higher sensitivity. Compared to quantum cascade or lead-salt lasers operating at longer infrared wavelengths,antimonide lasers have the advantage that both laser and detector technology support room temperature, cw operation. This paper describes experiments to measure ammonia and methane simultaneously, with high sensitivity and fast response, using a distributed feedback laser at 2200 nm. Our approach is based on scanning the laser over a small spectral regionthat encompasses several lines, either by varying the laser temperature or current, while simultaneously using wavelength modulation with harmonic detection to record the spectrum. Temperature scanning is slower but can cover a wider spectral interval. Digital signal processing methods, including classical least squares and singular value decomposition, extract the gas concentrations from the measured spectra. The accuracy and precision of these algorithms are compared in two limits: the limit when both gases are absent or present only at low levels, and the limit when the concentration of one gas is high.

Crystal structures of rubidium calcium arsenide, RbCaAs and of rubidium calcium antimonide, RbCaSb

Abstract: Source of material: The title compounds were synthesized from stoichiometric amounts of the elements (Rb:Ca:As(Sb) =1:1:1) in sealed niobium ampoules in evacuated quartz tubes at 973 K. RbCaAs and RbCaSb are isostructural with KMnAs (see ref. 1). The structure can be described as an elongated ccp arrangement of As or Sb atoms along [101]. Half of the tetrahedral holes are centered by Ca atoms. The filled tetrahedra share edges forming ^[CaX4/4] layers (X = As, Sb) parallel ((Ю1) with J(Ca-As) = 296.4 pm and ¿(Ca-Sb) = 315.8 pm. These layers are held together by the Rb atoms, which are displaced from the centers of the octahedra resulting in a pyramidal coordination (CN = 5). The band gaps from diffuse reflexion spectra Eg = 2.4 eV (RbCaAs) and Eg = 2.3 eV (RbCaSb) are in agreement with the ruby-red color of these compounds.