Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Performance Limits of Low Bandgap Thermophotovoltaic Antimonide‐Based Cells for Low Temperature Radiators

Abstract: This paper assesses the performance of antimonide‐based thermophotovoltaic cells fabricated by different technologies. In particular, the paper compares the performance of lattice matched quaternary (GaInAsSb) cells epitaxially grown on GaSb substrates to the performance of ternary (GaInSb) and binary (GaSb) cells fabricated by Zn diffusion on bulk substrates. The focus of the paper is to delineate the key performance advantages of the highest performance‐to‐date of the quaternary cells to the performance of the alternative ternary and binary antimonide‐based diffusion technology. The performance characteristics of the cells considered are obtained from PC‐1D simulations using appropriate material parameters.

Antimonide second class superlattice infrared detector with planar structure and preparation method thereof

Abstract: The invention discloses an antimonide second class superlattice infrared detector with a planar structure and a preparation method thereof; the antimonide second class superlattice infrared detector comprises a lower electrode, an InAs/GaSb or InAs/InAsSb superlattice absorbed layer, an InAs/GaSb superlattice or GaSb or GaAsSb contact layer, and an upper electrode arranged in sequence in a set direction; a p type zone is also locally formed in the contact layer or the contact layer and the superlattice absorbed layer; the invention also discloses an infrared detector preparation method; the antimonide second class superlattice infrared detector uses the planar structure to prevent surface leak current caused by etching in a normal mesa structure, thus reducing dark current and noises of the infrared detector, and simplifying the manufacture technology of the antimonide second class superlattice infrared detector. In addition, an energy zone composition and material combination of the pin type detector are specially designed, thus ensuring photoproduction carrier collection not to be blocked by barriers, and effectively ensuring and improving infrared detector work performance.

Non-Contact Determination of Free Carrier Concentration in n-GaInAsSb

Abstract: GaSb-based semiconductors are of interest for mid-infrared optoelectronic and high-speed electronic devices. Accurate determination of electrical properties is essential for optimizing the performance of these devices. However, electrical characterization of these semiconductors is not straightforward since semi-insulating (SI) GaSb substrates for Hall measurements are not available. In this work, the capability of Raman spectroscopy for determination of the majority carrier concentration in n-GaInAsSb epilayers was investigated. Raman spectroscopy offers the advantage of being non-contact and spatially resolved. Furthermore, the type of substrate used for the epilayer does not affect the measurement. However, for antimonide-based materials, traditionally employed Raman laser sources and detectors are not optimized for the analysis wavelength range dictated by the narrow band gap of these materials. Therefore, a near-infrared Raman spectroscopic system, optimized for antimonide-based materials, was developed. Ga{sub 0.85}In{sub 0.15}As{sub 0.13}Sb{sub 0.87} epilayers were grown by organometallic vapor phase epitaxy with doping levels in the range 2 to 80 x 10{sup 17} cm{sup -3}, as measured by secondary ion mass spectrometry. For a particular nominal doping level, epilayers were grown both lattice matched to n-GaSb substrates and lattice-mismatched to SI GaAs substrates under nominally identical conditions. Single magnetic field Hall measurements were performed on the epilayers grown on SI GaAs substrates, while Raman spectroscopy was used to measure the carrier concentration of epilayers grown on GaSb and the corresponding SI GaAs substrates. Compared to Hall measurements, Raman spectra indicated that the GaInAs/Sb epilayers grown on GaSb substrates have higher free carrier concentrations than the corresponding epilayers grown on SI GaAs substrates under nominally identical conditions. This is contrary to the assumption that for nominally identical growth conditions, the resulting carrier concentration is independent of substrate, and possible mechanisms will be discussed.

Fabrication, Transport and Characterization of Cesium Potassium Antimonide Cathode in Electron Guns

Abstract: We have fabricated two cesium potassium antimonide cathodes at BNL, transported them in a UHV load-lock chamber to JLab and tested their performance in DC gun at 100 kV and 200 kV. These cathodes have delivered current of 16 mA and current density up to 8 A/cm 2 without significant degradation. Two more load-lock chambers have been built to transport and insert similar cathodes in SRF guns operating at 704 MHz and 112 MHz. In this paper, we will describe the design of the load-lock chambers, transfer mechanisms, transport of the cathodes over ~ 750 km in UHV environment and the cathode performance in the gun environment.