Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Optical Characterization of Indium Arsenide Antimonide Semiconductors Grown by Molecular Beam Epitaxy

Abstract: : The material parameters and crystalline quality of undoped, MBE-grown InAs(1-x)Sb(x) nearly lattice-matched to (100) GaSb (-0.617% less than or equal delta a/a less than or equal +0.708%) similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also studied by temperature- and excitation-dependent photoluminescence (PL), which, for the majority of cases, showed only a single band-edge peak, identified by comparison with the absorption data. PL linewidths as narrow as 4.3 meV and LO-phonon replicas indicated high material quality, but the shift of the PL peak to higher energies with increased excitation was greater than expected from band filling alone, and underscored the likelihood of phase separation. Extrinsic PL peaks were also observed from one undoped sample, and identified a F-B transition at 4-7 meV and a DAP transition at 10-14 meV below the band edge. Characterization of InAs(1-x)Sb(x):Be identified the Be acceptor energy as >30 meV above the valence band. jg p263

Boron doped manganese antimonide as a useful permanent magnet material

Abstract: Permanent magnets are used for several important applications, including de electrical motors, wind turbines, hybrid automobile, and for many other applications. Modern widely used rare-earth based permanent magnet materials, such as Sm—Co and Nd—Fe—B, are generally intermetallic alloys made from rare earth elements and transition metals such as cobalt. However, the high costs of rare earth elements make the widespread use of these permanent magnets commercially unattractive. The present work focuses on producing a new permanent magnet material, with good magnetic properties, which is free from rare-earth elements and thus cost-effective. The present invention provides a process to synthesis boron doped manganese antimonide as an alternative to rare earth based permanent magnet materials. The boron doped manganese antimonide disclosed in this invention is free from rare-earth element with good magnetic properties. The material in the present study has been synthesized employing sequential combination of high energy ball milling, arc melting under argon atmosphere and again high energy ball milling followed by annealing. The annealed boron doped manganese antimonide shows improved magnetic properties as compared to manganese antimonide.

Crystal structure of discandium antimonide, Sc2Sb

Abstract: SbSc2, tetragonal, PAInmm (No. 129), a = 4.211(1) Â, c = 7.814(3) Â, V= 138.6 Â, Z= 2, R&(F) = 0.065, wÄreffF^ = 0.159, Τ =293 Κ. Source of material Sc2Sb was synthesized from the elements in a sealed tantalum ampoule at 1075 Κ for 4 days. The powdered product was compressed to a pellet and melted twice in an arc furnace in a protective argon atmosphere. After additional annealing at 1225 Κ for 8 days crystals of sufficient quality for X-ray diffraction were formed. Table 1. Data collection and handling.