Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Fabrication of compound semiconductor element

Abstract: PURPOSE:To provide a method for easily fabricating a narrow, gap compound semiconductor element having infrared ray detecting function in which the compositional elements are bonded strongly to allow stabilized crystal growth. CONSTITUTION:The method for fabricating a compound semiconductor element comprises a step for epitaxially growing an tin-indium antimonide (Snx(InSb)1-x) layer 2 on a substrate 1 of indium antimonide (InSb) at a base body (substrate) temperature of 50-230 deg.C, and a step for forming a semiconductor element region (active region) on the tin-indium antimonide (Snx(InSb)1-x) layer 2.

Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers

Abstract: We report on optically-pumped mid-infrared (3.4 - 4.5 /spl mu/m) lasers based on InAs/InGaSb/InAs type-II quantum wells that are periodically inserted into the InGaAsSb waveguide designed to absorb the 1.85 /spl mu/m pump radiation. The integrated absorber layers allow the decoupling of pump absorption from the type-II quantum wells, and efficiently supply carries into these wells by ambipolar diffusion. These type-II integrated absorber lasers exhibit high quantum efficiency and high characteristic temperature associated with lasing threshold.

RBS analysis of AlGaSb thin films

Abstract: Thermophotovoltaic (TPV) cells convert the energy from non-solar thermal sources into electricity Therefore, low bandgap semiconductor materials are necessary for TPV cells Materials based on GaSb cells and on ternary and quaternary antimonide compounds are being investigated as candidates for use in the next generation of TPV systems We grew GaSb/Al x Ga 1− x Sb thin films on single crystalline GaSb substrates using Metal-Organic Vapour Phase Epitaxy performed in an industrial size reactor at 848 K, with a V/III ratio of 1–2 Some of the films include several layers, each with a different Al content RBS of the films was performed at different angles of incidence, from normal to grazing incidence The stoichiometry and thickness of the deposited layers was determined, and the dependence of Al incorporation on the orientation of the GaSb crystal was investigated The density of the layers was determined

High Pressure Structural Properties of Rare-earth Antimonide

Abstract: In the present paper, we have investigated the high-pressure structural phase transition of rare-earth antimonide. We studied theoretically the structural properties of this compound (DySb) by using the three-body potential model with the effect of electronic polarizability (TBIPE P ). These compounds exhibits first order crystallographic phase transition from NaCl (B 1 ) to CsCl (B 2 ) phase at 22.6 GPa respectively. The phase transition pressures and associated volume collapse obtained from present potential model(TBIPE P ) show a good agreement with available experimental data. Keywords: High Pressure, Crystal Structure, Volume Collapse