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Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


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Journal ArticleDOI
TL;DR: In this article, the structure was refined on the basis of single crystal X-ray diffractometer data: U 4 Re 7 Si 6 type, Im3m, a = 865.9(2) pm, wR2 = 0.0557, 159 F 2 values and 10 variables.
Abstract: Yb 4 Rh 7 Sb 6 was synthesized by arc-melting ofthe elements. The structure was refined on the basis of single crystal X-ray diffractometer data: U 4 Re 7 Si 6 type, Im3m, a = 865.9(2) pm, wR2 = 0.0557, 159 F 2 values and 10 variables. The two crystallographically independent rhodium atoms have octahedral and tetrahedral antimony coordination with Rh-Sb distances ranging from 269 to 274 pm. These polyhedra are condensed via common edges and comers, leading to a complex three-dimensional [Rh 7 Sb 6] network. Coordination number 12 cavities within this network are filled by the ytterbium atoms. Temperature dependent magnetic susceptibility measurements show modified Curie-Weiss behavior and an experimental magnetic moment of 3.16(1) μ B /Yb atom, pointing to intermediate-valent ytterbium. Magnetization measurements at 5 K give hint for short-range magnetic ordering. 121 Sb Mossbauer spectra confirm the single crystallographic antimony site and antimonide character.

1 citations

Proceedings ArticleDOI
11 Aug 1997
TL;DR: The AlGaAsSb system appears very suitable to elaborate high reflective DBRs with a low number of pairs operating at wavelengths of interest for telecommunications (13 and 155 /spl mu/m).
Abstract: The AlGaAsSb system appears very suitable to elaborate high reflective DBRs with a low number of pairs operating at wavelengths of interest for telecommunications (13 and 155 /spl mu/m) Very high reflectivities of 992% at 156 /spl mu/m and for the first time 988% at 13 /spl mu/m have been obtained We are now investigating this antimonide approach for fabricating monolithic VCSELs Thus the elaboration of an active layer composed of InGaAs wells encapsulated within AlGaInAs barriers is under evaluation

1 citations

01 Sep 2007
TL;DR: In this paper, a technique for suppressing sublimation of key elements from skutterudite compounds in advanced thermoelectric devices has been demonstrated, which is specifically tailored for application to skutterude antimonides.
Abstract: A technique for suppressing sublimation of key elements from skutterudite compounds in advanced thermoelectric devices has been demonstrated. The essence of the technique is to cover what would otherwise be the exposed skutterudite surface of such a device with a thin, continuous film of a chemically and physically compatible metal. Although similar to other sublimation-suppression techniques, this technique has been specifically tailored for application to skutterudite antimonides. The primary cause of deterioration of most thermoelectric materials is thermal decomposition or sublimation - one or more elements sublime from the hot side of a thermoelectric couple, changing the stoichiometry of the device. Examples of elements that sublime from their respective thermoelectric materials are Ge from SiGe, Te from Pb/Te, and now Sb from skutterudite antimonides. The skutterudite antimonides of primary interest are CoSb3 [electron-donor (n) type] and CeFe(3-x)Co(x)Sb12 [electron-acceptor (p) type]. When these compounds are subjected to typical operating conditions [temperature of 700 C and pressure <10(exp -5) torr (0.0013 Pa)], Sb sublimes from their surfaces, with the result that Sb depletion layers form and advance toward their interiors. As the depletion layer advances in a given device, the change in stoichiometry diminishes the thermal-to-electric conversion efficiency of the device. The problem, then, is to prevent sublimation, or at least reduce it to an acceptably low level. In preparation for an experiment on suppression of sublimation, a specimen of CoSb3 was tightly wrapped in a foil of niobium, which was selected for its chemical stability. In the experiment, the wrapped specimen was heated to a temperature of 700 C in a vacuum of residual pressure <10(exp -5) torr (0.0013 Pa), then cooled and sectioned. Examination of the sectioned specimen revealed that no depletion layer had formed, indicating the niobium foil prevented sublimation of antimony at 700 C. This was a considerable improvement, considering that uncoated CoSb3 had been found to decompose to form the lowest antimonide at the surface at only 600 C. Evidently, because the mean free path of Sb at the given temperature and pressure was of the order of tens of centimeters, any barrier closer than tens of centimeters (as was the niobium foil) would have suppressed transport of Sb vapor, thereby suppressing sublimation of Sb

1 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836