Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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10 Apr 2018
TL;DR: In this paper, the improved electrochemical properties of tin antimonide when cerium was incorporated in the matrix were reported. But the performance was limited due to volumetric change restricting application.
Abstract: Possession of high theoretical capacity of Sn and Sb on lithiation attracts high attention. Tin antimonides suffer from volumetric change restricting application. Addition of active/inactive elements in the matrix is captive. This work reports the improved electrochemical characters of tin antimonide when cerium incorporated in the matrix. The prepared alloy is subjected as an anode, due to the expected high electronic conductivity, with the aqueous and non-aqueous electrolyte and the performance is exhibiting better reversibility, high conductivity and cyclability. The performances of typically prepared tin antimonide and Ce incorporated tin antimonide are presented. The structural aspects clear that both the pristine and doped SnSb alloy exhibit hexagonal crystal system.
1 citations
TL;DR: In this article, the authors investigated the thermal properties of the optically pumped vertical external cavity surface of a VECSEL with and without a SiC heatspreader and found that the temperature increase in case of the SiC heat spreader is reduced by a factor of almost 10 in comparison to the VECsEL without the SiCspreader.
Abstract: In this paper the investigation of thermal properties of the optically pumped vertical external cavity surface emitting
lasers (VECSEL) is reported. The experimental technique used is thermoreflectance. The original achievements of the
paper include design and construction of experimental setups allowing the measurement of the temperature distributions
on the surface of the operating VECSEL with and without heatspreader. The temperature increase in case of the
VECSEL with SiC heatspreader is reduced by the factor of almost 10 in comparison to the VECSEL without the
heatspreader. Additionally, the lowering of the temperature of lasing VECSEL was observed experimentally.
1 citations
01 Jan 1998
TL;DR: In this paper, the optical properties of aluminum antimonide (AlSb) have been analyzed for a limited number of samples and the refractive index, n, and extinction coefficient, k, of AlSb have been measured.
Abstract: Publisher Summary
This chapter analyzes the optical properties of aluminum antimonide (AlSb). The refractive index, n, and the extinction coefficient, k, of AlSb have been measured for a limited number of samples. The two main reasons for this are that large high-quality single crystals are difficult to grow and the surface of AlSb reacts rapidly with the atmosphere to produce a relatively thick contaminated layer. One method for measuring the optical properties of semiconductors—especially for the ultraviolet (UV) and visible regions—is spectroscopic ellipsometry. However, contamination-free surfaces are needed for precise ellipsometric measurements. The chapter reviews the measurements of the dependence of energy-gap absorptance of AlSb at room temperature for hydrostatic pressures from atmospheric up to the phase change at about 8 GPa; the reflectance of room-temperature AlSb between 16 m and 40 m, which includes the infrared lattice reflectance band; and the fundamental reflection band of six III–V compound semiconductors at liquid helium-temperature.
1 citations
TL;DR: Scandium dysprosium antimonide ScDySb was synthesized from scandium metal and DySb in an all-solid state reaction at 1770 K as discussed by the authors.
Abstract: Scandium dysprosium antimonide ScDySb was synthesized from scandium metal and DySb in an all-solid state reaction at 1770 K. According to X-ray analysis of the crystal structure [P4/nmm, Z = 4, a = 430.78(1) pm, c = 816.43(4) pm, R1 = 0.0238, wR(all) = 0.0688, 268 independent reflections], ScDySb adopts the anti-PbFCl type of structure, but with pronounced deviations in structural details, which are related to specific bonding interactions between the atoms involved. ScDySb shows antiferromagnetic ordering below 35.4 K, which was verified by susceptibility, heat capacity, and resistivity measurements. X-ray structure determination, performed at 30 K, showed no significant structural changes to occur during the magnetic phase transition. The band structure was calculated in the framework of Density Functional Theory. The bonding properties are comparable to those of Sc2Sb. Pronounced basins of the Electron Localization Function (ELF) appear in the tetragonal pyramidal Sc4Dy voids.
1 citations
TL;DR: In this paper , the authors show that transition metal dichalcogenides (TMDs) have a metallic nature at room temperature with a transition to a semiconducting nature at low temperatures accompanied by a phase transition, in agreement with band structure calculations.
Abstract: Transition metal dichalcogenides (TMDs) are known for their layered structure and tunable functional properties. However, a unified understanding on other transition metal chalcogenides (i.e. M2X) is still lacking. Here, the relatively new class of copper-based chalcogenides Cu2X (X = Te, Se, S) is thoroughly reported. Cu2X are synthesized by an unusual vapor–liquid assisted growth on a Al2O3/Cu/W stack. Liquid copper plays a significant role in synthesizing these layered systems, and sapphire assists with lateral growth and exfoliation. Similar to traditional TMDs, thickness dependent phonon signatures are observed, and high-resolution atomic images reveal the single phase Cu2Te that prefers to grow in lattice-matched layers. Charge transport measurements indicate a metallic nature at room temperature with a transition to a semiconducting nature at low temperatures accompanied by a phase transition, in agreement with band structure calculations. These findings establish a fundamental understanding and thrust Cu2Te as a flexible candidate for wide applications from photovoltaics and sensors to nanoelectronics.
1 citations