Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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1 citations
28 May 1999
TL;DR: In this paper, the In content in GaInAsSb was increased to 2.7 µm to avoid the miscibility gap, and the maximum CW power at 10/spl deg/C from a 100-/spl mu/m aperture was 500, 250 and 160 mW for 2.3, 2.5 and 2.6 µm respectively.
Abstract: Summary form only given. Antimonide-based semiconductor lasers, either electrically or optically pumped, have made significant progress in the past few years. Near 2 /spl mu/m, GaInAsSb/AlGaAsSb quantum-well (QW) diode lasers have exhibited excellent performance, with room-temperature threshold current density as low as 50 A/cm/sup 2/, CW output power more than 1 W from 100-/spl mu/m aperture, and diffraction-limited CW power of 600 mW from tapered structures. Recently, room-temperature CW operation has been extended to 2.7 /spl mu/m by increasing the In content in GaInAsSb while limiting the As content to avoid the miscibility gap. The maximum CW power at 10/spl deg/C from a 100-/spl mu/m aperture was 500, 250 and 160 mW for 2.3, 2.5 and 2.6 /spl mu/m, respectively.
1 citations
Patent•
30 Aug 2002
TL;DR: In this paper, a thermoelectric material that has improved the conversion performance and junction properties with an electrode to a thermal history in an antimonide material having skutterudite structure was provided.
Abstract: PROBLEM TO BE SOLVED: To provide a thermoelectric material that has improved thermoelectric conversion performance and junction properties with an electrode to a thermal history in an antimonide thermoelectric material having skutterudite structure. SOLUTION: Gas atomized powder having a different antimony content is sintered by a thermoelectric material sintered body containing rare-earth elements in antimonide having skutterudite structure, thus forming a section containing antimony more excessively than a desired stoichiometric composition in one portion of the sintered body.
1 citations
TL;DR: In this paper , the authors incorporated a novel method known as intercalation, in which alkali atoms pass through the defects of a graphene thin film to create a photocathode material underneath.
Abstract: Alkali antimonide photocathodes have wide applications in free-electron lasers and electron cooling. The short lifetime of alkali antimonide photocathodes necessitates frequent replacement of the photocathodes during a beam operation. Furthermore, exposure to mediocre vacuum causes loss of photocathode quantum efficiency due to the chemical reaction with residual gas molecules. Theoretical analyses have shown that covering an alkali antimonide photocathode with a monolayer graphene or hexagonal boron nitride protects it in a coarse vacuum environment due to the inhibition of chemical reactions with residual gas molecules. Alkali antimonide photocathodes require an ultra-high vacuum environment, and depositing a monolayer 2D material on it poses a serious challenge. In the present work, we have incorporated a novel method known as intercalation, in which alkali atoms pass through the defects of a graphene thin film to create a photocathode material underneath. Initially, Sb was deposited on a Si substrate, and a monolayer graphene was transferred on top of the Sb film. Heat cleaning around 550–600 °C effectively removed the Sb oxides, leaving metallic Sb underneath the graphene layer. Depositing Cs on top of a monolayer graphene enabled the intercalation process. Atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, low energy electron microscopy, and x-ray diffraction measurements were performed to evaluate photocathode formation underneath the monolayer graphene. Our analysis shows that Cs penetrated the graphene and reacted with Sb and formed Cs 3 Sb.
1 citations