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Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


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TL;DR: In this paper , the morphological, structural, and optical properties of zinc doped aluminum antimonide (Zn:AlSb) have been investigated using XRD, optical microscopy, and UV-V spectroscopy along with four-point probe technique.
Abstract: Abstract Thin films of zinc doped aluminum antimonide (Zn:AlSb) have been dumped on glass substrate using chemical bath deposition method. The morphological, structural, as well as optical properties of deposited thin films are investigated using XRD, optical microscopy, and UV-V is spectroscopy along with four-point probe technique. The XRD results exhibit that Zn is doped in AlSb and maximum grain size has been obtained at 4% Zn-concentration. Optical micrographs of pure and zinc doped aluminum antimonide (AlSb) at different concentrations of Zn have been shown to confirm the doping by observing changes in morphology and it has been observed that optimized films of AlSb are obtained at 4% of Zn-content. The optical bandgap of Zn doped AlSb films at varying concentrations of 0%, 1%, 2%, 3% and 4% has been found to decrease with enhancement in Zn-concentration and values are measured as 1.8, 1.7, 1.6, 1.4, and 1.3 eV respectively. The sheet resistivity also depends on Zn-content and has been observed to decrease as AlSb is doped with Zn, indicating an increase in electrical conductivity. The explored results indicate a significant potential of these deposited thin films to be used in photonics, photocatalysis, and energy industry.

1 citations

01 May 2004
TL;DR: In this article, the authors review the recent progress of Sb-based mid-IR IC lasers and address the requirements for further improvements in their performance, including achieving low threshold current densities, high temperature operation, and continuous wave operation of singlemode distributed feedback lasers.
Abstract: Antimonide-based type-II interband cascade lasers are promising in becoming efficient and compact mid-infrared light sources for many applications such as gas sensing and environmental monitoring. Significant progress toward such a goal has recently been made in terms of achieving low threshold current densities, high temperature operation, and continuous wave operation of single-mode distributed feedback lasers. We review the recent progress of Sb-based mid-IR IC lasers and address the requirements for further improvements in their performance.

1 citations

Patent
28 Sep 2011
TL;DR: In this article, a method for preparing an antimonide film P-N (Positive-Negative) junction through thermal evaporation is presented. But the method is not suitable for high-vacuum plating systems.
Abstract: The invention discloses a method for preparing an antimonide film P-N (Positive-Negative) junction through thermal evaporation The method comprises the steps of: placing a clean substrate in a chamber of a high-vacuum plating system, and vacuumizing the system to high vacuum; heating the substrate, preserving the set temperature, adding doping sources in evaporation sources, heating each evaporation source by adopting a thermal evaporation method, and preparing a doped antimonide film material through co-evaporation, wherein P-type and N-type antimonide materials with different doping concentrations can be obtained by adjusting the temperature of evaporation sources; and obtaining a homojunction or heterojunction P-N structure of an antimonide by using different substrates and the evaporation sources

1 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836