Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

A method for the low temperature cleaning of substrates containing indium or antimony

Abstract: A method for low temperature cleaning of group III-V semiconductor substrates, in particular substrates containing indium or antimonide, whereby the substrate is heated in an oxygen-free environment and exposed to a chemical cleaning agent. The chemical is of the form (Me2N)3-X, where X is a group V element (e.g. arsenic (As), antimony (Sb), phosphorus (P)), also present in the substrate. Examples of the chemicals are tris(dimethylamino)arsine [TDMAAs] = (Me2N)3As, tris(dimethylamino)antimony [TDMASb] = (Me2N)3Sb, and tris(dimethylamino)phosphine [TDMAP] = (Me2N)3P. The cleaning process removes the native oxide layer on the surface of the substrate, leaving a smooth, atomically flat surface suitable for epitaxial growth. The process is of particular importance to thermally unstable substrates, for example indium antimonide (InSb), which are difficult to clean using conventional techniques.

Type-II hybrid absorber photodetector

Abstract: A type-II hybrid absorber photodetector (PD) is provided with ultrafast speed and high-power performance at terahertz (THz) regime. Through narrowed bandgap and enhanced absorption process at a type-II interface between absorption layers of gallium arsenic antimonide (GaAs0.5Sb0.5) and indium gallium arsenide (In0.53Ga0.47As), the incorporation of the type-II P+-GaAs0.5Sb0.5/i-In0.53Ga0.47As hybrid absorber in an indium phosphide (InP) UTC-PD obtains improvement in responsivity. Current blocking effect is minimized owing to the high-excess energy of photo-generated electrons injected from the GaAs0.5Sb0.5 layer to an InP-based collector layer. The flip-chip bonding packaged device shows a moderate responsivity along with a record wide optical-to-electrical bandwidth at 0.33 THz, among all the reported for long-wavelength ultrafast PDs. A saturation current exceeding 13 mA and a continuous-wave output power of −3 decibel-milliwatts are demonstrated at an operating frequency of 0.32 THz under an optical signal with a sinusoidal wave and a ˜63% modulation depth for PD excitation.

Growth of aluminum antimonide in solid aluminum-liquid antimony diffusion couples

Abstract: An investigation was made of the isothermal growth of the intermediate alloy phase aluminum antimonide AlSb, at the interfaces of diffusion couples consisting either of solid aluminum and liquid antimony or of solid aluminum and of an Sb−Al alloy slightly supersaturated in AlSb. The diffusion anneals were carried out in the temperature range 635° to 655°C and for times up to 48 hr. In the solid aluminum vs liquid antimony couples, it was found that considerable dissolution of solid aluminum occurred at the solid-liquid interface before the first crystals of AlSb appeared. Subsequently, a two-phase region, consisting of AlSb crystals of greatly varying sizes interspersed throughout the liquid antimony developed between the instantaneous solid-liquid interface and the original solid-liquid interface. The results suggest that the dominant mechanism influencing the growth of AlSb in these diffusion couples is diffusional mass transport of aluminum in liquid antimony. The rapid diffusion of aluminum leads first to the dissolution of solid aluminum and saturation of the liquid antimony, and next to the growth of large discrete crystals of AlSb presumably via an Ostwald-ripening mechanism.

Near-Infrared Tunable Reflection and Absorption Using Nanostructured Thin Film Structures Employing Phase-Change Material

Abstract: We present the design of a polarization-dependent tunable nanostructured thin film absorber in the nearinfrared region. Germanium antimonide tellurite (GST) was employed as the phase change material in the designed structure. Our structure is composed of a periodic grating-type array of 150 nm thick Au buried with 50 nm thick GST layer from the top of the Au layer. The period of the gratings is 2 µm and in each period, GST width is 1 µm. GST was selected as the active phase change material because its optical properties undergo a substantial change during a structural transition from amorphous to crystalline phase. The optical absorption and reflection properties of the designed structure with respect to the geometric and material parameters were systematically investigated using the finite dierence time domain computations. It was shown that absorption peak or reflection dip at the resonant wavelengths in the near-infrared region was red shifted from 2039 nm to 2143 nm wavelength by switching the phase change material from its amorphous to crystalline states. The distributions of the electric field and absorbed power at the resonant wavelengths with respect to dierent phases of the GST were investigated to further explain the physical origin of the absorption. Our study provides a path toward the realization of tunable infrared absorbers for applications, such as selective infrared emitters, infrared camouflage, sensors, and photovoltaic devices. DOI: 10.12693/APhysPolA.129.464 PACS/topics: 78.67.Pt