Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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TL;DR: In this paper, the deformation of the layer unit cells is determined with high accuracy, taking into account relaxation, layer tilting, and asymmetrical strain, and layer compositions are determined and layer sequences are examined accurately also considering the results of reflective high-energy electron diffraction studies during growth.
1 citations
Patent•
12 Jan 2018
TL;DR: In this article, a surface cleaning method of a gallium antimonide substrate and a second-type antimide-base superlattice material is proposed. But the surface roughness of the material is low after cleaning, the subsequent generation of the materials is greatly facilitated, and higher interface quality can be achieved.
Abstract: The invention relates to a surface cleaning method of a gallium antimonide substrate and a second-type antimonide-base superlattice material. The method includes the steps of packing a sample into a high-vacuum chamber, wherein the vacuum degree is higher than 1*10 Torr; raising the temperature of the sample to a target temperature value and maintaining the temperature of the sample; releasing a beam of an atomic hydrogen source to cover the sample continuously for 1-50 minutes till oxidative products on the surface of the sample are completely removed, wherein the vacuum degree is 1*10 - 1*10 Torr during the process; closing the atomic hydrogen source, and executing a subsequent material generation process in the same vacuum system. According to the surface cleaning method,at a low temperature, through assistance of the atomic hydrogen, an oxidation layer and other remaining impurities on the surface are removed, so that damage caused by high temperature to the material surface or each interface of the superlattice can be avoided; the surface roughness of the material is low after cleaning, the subsequent generation of the material is greatly facilitated, and higher interface quality can be achieved.
1 citations
06 Aug 2002
TL;DR: Modified liquid phase epitaxy (LPE) techniques can be adapted for the growth of relatively thick (50 to 500 micron) epitaxial layers of ternary and quaternary Ill-V antimonide alloys as discussed by the authors.
Abstract: Modified liquid-phase epitaxy (LPE) techniques can be adapted for the growth of relatively thick (50 to 500 micron) epitaxial layers of ternary and quaternary Ill-V antimonide alloys, including InAsSb, InGaSb, AlGaAsSb, InGaAsSb, and InAsSbP. These structures can function as 'virtual' substrates with adjustable lattice constants for epitaxy of various optoelectronic devices such as mid-infrared photodiodes. A variety of substrate structures can be realized either by effecting gradual, continuous compositional grading of thick epilayers, or by growing multilayers with abrupt but incremental compositional changes between adjacent layers. Both approaches can be combined with selective removal of the seeding substrate and wafer bonding techniques. Low-defect alloy substrates with increased functionality, and with lattice constants and bandgaps significantly different than available with binary compound wafers (e.g., InAs or GaSb), appear feasible.
1 citations
TL;DR: In this paper, photoreflectance (PL) experiments are performed on GaAsSb/InP heterostructures in order to get information about ordering and segregation effects in antimonide alloys.
Abstract: GaAsSb is a promising material for the base of a new generation of Heterojunction Bipolar Transistors (HBT) on InP, as it is expected to allow the elaboration of high-speed digital circuits (80 to 100 Gbits/s). Emitter-base interfaces between GaAsSb and InP need to be well controlled to ensure good performance of the HBT, and this requires a careful analysis of both material and interface quality. Photoluminescence (PL) experiments as a function of temperature and of power excitation density, as well as photoreflectance (PR) measurements are performed on GaAsSb/InP heterostructures in order to get information about ordering and segregation effects in antimonide alloys. From the PL recombination energy across the type II interface and at the GaAsSb band-edge, the band offset ΔE C between InP and GaAsSb is calculated. The evolution of the band to band PL recombination is studied as a function of temperature: the energy and intensity of the type I PL transition are shown to exhibit specific behaviors, which are typical of carrier localization effects in semiconductor alloys. At low temperature, the shape of the PR spectrum results in an atypical steplike background, which is analyzed as a band filling effect in consequence of the carrier localization on potential fluctuations.
1 citations