Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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01 May 2006
TL;DR: The first GaInNAsSb solar cells were reported in this article, where the dilute nitride antimonide material, grown by molecular beam epitaxy, has a bandgap of 0.92 eV and maintains excellent carrier collection efficiency.
Abstract: The first GaInNAsSb solar cells are reported. The dilute nitride antimonide material, grown by molecular beam epitaxy, has a bandgap of 0.92 eV and maintains excellent carrier collection efficiency. Internal quantum efficiency of nearly 80% at maximum is obtained in the narrow bandgap GaInNAsSb cells. The short-circuit current density produced by the GaInNAsSb cells underneath a GaAs sub-cell in a multijunction stack, determined from the overlap of the quantum efficiency and the low-AOD spectrum, is 14.8 mA/cm2. This is sufficient to current match the GaInNAsSb sub-cell to the other sub-cells in a GaInP/GaAs/GaInNAsSb solar cell. However, the open-circuit voltage and fill factor of the antimonide devices, 0.28 V and 0.61, are somewhat reduced when compared to GaInNAs devices with 1.03 eV bandgaps. The GaInNAsSb devices had wider depletion regions, which improves the collection efficiency but adversely affects the fill-factor and dark current by increasing depletion region recombination.
34 citations
TL;DR: In this article, the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb were studied, and the Ni-antimonide-based metal source/drain (S/D) p-channel metal-oxide-semiconductor field effect transistors were demonstrated, in which heterostructure design was adopted to further improve the performance.
Abstract: In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing (300°C), low Schottky barrier height for holes (~0.1 eV), low sheet resistance of Ni-InGaSb (53 Ω/\square), and low specific contact resistivity (7.6×10)-7Ω cm2), show good progress toward antimonide-based metal source/drain (S/D) p-channel metal-oxide-semiconductor field-effect transistors. Devices with a self-aligned metal S/D were demonstrated, in which heterostructure design is adopted to further improve the performance, e.g., ON/OFF ratio , subthreshold swing (140 mV/decade), and high effective-field hole mobility of ~510 cm2/Vs at sheet charge density of 2×1012 cm-2.
34 citations
TL;DR: A new and compact photoacoustic sensor for trace gas detection in the 2-2.5 microm atmospheric window is reported and an optimized modulation scheme based on wavelength modulation of the laser source combined with second harmonic detection has been implemented for efficient suppression of wall noise.
34 citations
TL;DR: In this paper, the use of bulk antimonide based materials and type-II antimony-based superlattices in the development of large area mid-wavelength infrared (MWIR) focal plane arrays (FPAs) is demonstrated.
34 citations
TL;DR: In this article, the intrinsic emittance and response time of electron bunches extracted from this material were reported. And the authors showed that the cathode is rugged enough to deliver tens of mA of average current with no or minimal degradation.
Abstract: Sodium potassium antimonide photocathodes with Quantum Efficiency (QE) in the range of few percent have been grown, and their photoemission properties are measured. We report the intrinsic emittance and response time of electron bunches extracted from this material. It is possible to recover the QE of an overheated cathode by simple potassium addition, and the cathode is rugged enough to deliver tens of mA of average current with no or minimal degradation.
33 citations