Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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TL;DR: In this paper, the Fourier Transform Optics (FTO) was used to obtain high quality spectra for low-energy gap semiconductors with tunable dye lasers.
Abstract: The atomic perfection of interfaces and local impurity distribution are important parameters in the control of low dimensional semiconductor systems. Over the past few years photoluminescence excitation spectroscopy has proved to be of immense value in the detailed characterisation of such systems. This is especially the case for the GaAs/AIGaAs material technology in which tunable dye lasers can readily supply the variable wavelength excitation source needed for such work. However this form of characterisation is much more difficult for semiconductors with smaller energy gaps e.g. the ternary InGaAs or many materials in the important antimonide based system. No readily available dye lasers exist which can be used to resonantly excite the semiconductor. We have overcome this difficulty by using Fourier Transform Optics to source the excitation. We have successfully observed excitation spectra from InGaAs/InP and InGaAs/GaAs quantum well systems. The multiplex nature and high optical throughput of the Fourier Transform spectrometer yield high quality spectra with short measurement times. In this paper we review the experimental technique and demonstrate its enormous potential for “low” gap semiconductors. We illustrate the technique by describing its application to various quantum well systems.
Patent•
02 Apr 2014
TL;DR: In this paper, a flame retardant composition in a PVC (polyvinyl chloride) cable material was presented. But the method was based on a mixture of antimony trioxide and sodium antimonide.
Abstract: The invention relates to a flame retardant composition in a PVC (polyvinyl chloride) cable material One dose of the original antimony trioxide flame retardant is prepared from equal amounts of antimony trioxide and sodium antimonide (1:1), ie prepared from 05 part of antimony trioxide and 05 part of sodium antimonide A preparation method comprises the following processing steps: 1) respectively stirring antimony trioxide and sodium antimonide with plasticizer according to a weight ratio of 1:1, and milling; and 2) weighing and adding: weighing the milled flame retardant according to a antimony trioxide/sodium antimonide ratio of 1:1, mixing, and adding into a high-speed stirrer, wherein the time for respectively milling the antimony trioxide and the sodium antimonide with the plasticizer on a double-roller machine is 5 minutes According to the invention, the flame-retardant effect of one dose of flame retardant exceeds that of two doses of antimony trioxide, and the oxygen index of a PVC wire/cable material can be increased The sodium antimonide material is wide in resources and 1/5 of the antimony trioxide in price; and while the purpose of flame-retardant modification is achieved, the mechanical property and flame retardancy of the material are enhanced
TL;DR: In this article, the authors applied a standard semiconductor-grade CMP to two groups of antimonide substrates separated from the same boule and analyzed the substrate-surface orientation, atomic roughness, oxide desorption, and crystallinity as a function of CMP process.
Abstract: The high optical transparency of indium antimonide (InSb) substrates makes them attractive for IR focal-plane arrays (IRFPAs) and detectors, free-space communications, transistors, and integrated optoelectronics.1–3 A large-diameter crystalline InSb surface can accommodate new and bigger advanced IRFPA designs. However, the 150mm diameter of these antimonides poses unique surface-polishing challenges to substrate manufacturers. To improve the resolution and sensitivity of highperformance IRFPA imaging systems in the 1–5.4μm region (77◦K), the substrates’ surface must meet or surpass stringent demands. In particular, for detector-fabrication processes requiring epitaxy growth for the device layer, the starting InSb surface must be ultrasmooth, less than one atomic layer in roughness. It should also desorb the Sb and In surface oxides in an abrupt and fast outgassing process.4 A consistent and easily desorbable surface oxide helps improve advanced-device epilayer yield and performance in Sb-based IRFPA manufacturing. The substrate’s chemomechanical-polish (CMP) history is a primary factor in InSb surface smoothness and oxide desorption. We wanted to consistently produce surfaces suitable for recent epitaxy processes with stringent substrate-surface specifications. To do so, we analyzed the substrate-surface orientation, atomic roughness, oxide desorption, and crystallinity as a function of CMP process. Our resulting CMP process for largerdiameter InSb single-crystal surfaces has produced a smoother InSb starting surface and abrupt oxide-desorption characteristics suitable for device-layer molecular-beam-epitaxy (MBE) material growth.5 We applied a standard semiconductor-grade CMP to two groups of antimonide substrates separated from the same boule. We used a proprietary CMP process for group A. For group Figure 1. Thermal x-ray photoelectron spectroscopy analysis spectra in electron volts (eV) for the antimonide (Sb) 3d (electron orbital) binding-energy peaks of both Group A and B chemomechanical polish surfaces at 400◦C shows the Sb oxide removed for Group B polished surfaces. CMP: Chemomechanical polish.