Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Fabrication and characterization of n-ZnO/p-GaSb heterojunction diode

Abstract: The purpose of this paper is to examine the growth and characterization of the two different compound semiconductors, namely, n-zinc oxide (ZnO) and p-gallium antimonide (GaSb). In this paper, fabrication and characterization of n-ZnO/p-GaSb heterojunction diode is analyzed.,Thermo vertical direction solidification (TVDS) method was used to synthesize undoped GaSb ingot from high purity Ga (5N) and Sb (4N) host materials. Thermal evaporation technique is used to prepare a film of GaSb on glass substrate from the pre-synthesized bulk material by TVDS method. Undoped ZnO film was grown on GaSb film by sol–gel method by using chemical wet and dry (CWD) technique to fabricate n-ZnO/p-GaSb heterojunction diode.,The formation of crystalline structure and surface morphological analysis of both the GaSb bulk and film have been carried out by x-ray diffraction (XRD) analysis and scanning electron microscopy analysis. From the XRD studies, the structural characterization and phase identification of ZnO/GaSb interface. The current–voltage characteristic of the n-ZnO/p-GaSb heterostructure is found to be rectifying in nature.,GaSb film growth on any substrate by thermal evaporation method taking a small piece of the sample from the pre-synthesized GaSb bulk ingot has not been reported yet. Semiconductor device with heterojunction diode by using two different semiconductors such as ZnO/GaSb was used by this group for the first time.

Method of obtaining antimonide gallium with a large specific electrical resistance

Abstract: FIELD: electricity.SUBSTANCE: in the method of manufacturing gallium antimonide with a large specific electrical resistance including growing gallium antimonide by epitaxy on a substrate of gallium antimonide, the process of growing gallium antimonide is carried out by gas phase epitaxy from organometallic compounds at a temperature in the range from 550 to 620°C, when the content of antimony atoms is exceeded in relation to the content of gallium atoms in the gas phase, 20-50 times.EFFECT: creation of a method for the industrial manufacture of GaSb with a large specific electrical resistance.1 cl

Development of MWIR and LWIR nBn photodetectors at i3system

Abstract: In modern infrared systems, barrier infrared detectors (BIRDs) have been widely used because a barrier is effective in reducing dark current by Shockley-Reed-Hall (SRH) process. Many researches have been studied on design of the barrier that prevents majority carrier flow and permits minority carrier flow. In this paper, we have studied on type-II superlattice (T2SL) nBn detectors having an unipolar barrier, where design and epi. growth are relatively simple for MWIR high operating temperature (HOT) and cooled LWIR detectors. InAs/InAsSb nBn for MWIR detection and InAs/GaSb nBn for LWIR detection were designed and fabricated. The fabricated MWIR and LWIR devices showed a dark current density of ≤ 2×10-6 A/cm2 at 150 K and ≤ 5×10-6 A/cm2 at 80 K, respectively. Also, 15 μm VGA MWIR and LWIR FPAs showed excellent performance with an average noise equivalent temperature difference (NETD) of ≤ 20 mK and operability of 99.5 % at 150 K and 80 K, respectively. MWIR HOT detector exhibited measured NETD similar to theoretical NETD considering dark current. And 10 μm SXGA HOT MWIR detector for high resolution imaging showed perfornance with an average NETD of ≤ 25 mK and operability of ≥99.5 % up to 130 K.