Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Thermoelectric compound based on n-doped magnesium antimonide

Abstract: The invention mainly concerns a thermoelectric compound based on n-doped magnesium antimonide Mg3Sb2, the dopant being chosen among lanthanum, yttrium, cerium, praseodymium, neodymium, gadolinium, erbium, terbium, thulium and lutetium, being a mixture of these elements or being mischmetal, and said compound being devoid of bismuth. The invention also concerns such a thermoelectric compound for which the dopant is mischmetal.

Antimonide-based linear mode avalanche photodiodes for Lidar applications

Abstract: A low noise linear mode avalanche photodiodes (LmAPDs) is a critically enabling component for eye-safe long range LiDAR and remote sensing applications. Unlike PIN diodes, APDs provide internal gain that can lead to increased signal to noise ratio and suppress downstream circuit noise. Commercial APDs use an InGaAs absorber with an InAlAs or InP multipliers. We have recently demonstrate GaAsSb/AlGaAsSb separate absorber charge and multiplier (SACM) heterostructures . We will discuss the technical challenges associated with the design, growth, fabrication and test of these LmAPDs and the potential for the development of these critical APD arrays for active 3D sensing and imaging systems.

Multi Bandgap Photodetectors with Buried Epitaxial Metallic Contacts

Abstract: : A method for growing single crystal arrays of semimetallic vertical and horizontal erbium antimonide nanorods, nanotrees, and nanosheets embedded within a semiconducting gallium antimonide matrix was investigated. The nanostructures form simultaneously with the matrix and have epitaxial, coherent interfaces with no evidence of stacking faults or dislocations as observed by high-resolution transmission electron microscopy. By combining molecular beam epitaxy growth and in-situ scanning tunneling microscopy, images of the growth surface one atomic layer at a time showed that the nanostructured composites form via a surface mediated self-assembly mechanism that is controlled entirely at the growth front and is not a product of bulk diffusion or bulk segregation. These highly tuneable nanocomposites show promise for direct integration into epitaxial semiconductor device structures, and also provide a unique system in which to study the atomic scale mechanisms for nucleation and growth.