Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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Patent•
29 Oct 2009
TL;DR: In this article, an intermediate infrared antimonide laser device structure adopting DWELL was presented, where a DOT is embedded in a WELL, and the efficiency of the device was improved by increasing the number of the validity period of DWEll in the device.
Abstract: The invention discloses an intermediate infrared antimonide laser device structure adopting DWELL, namely the intermediate infrared laser structure of DWELL, wherein, a DOT is embedded in a WELL, and the efficiency of the device is improved by increasing the number of the validity period of DWELL in the device. In component of active area is reduced, and quantum dots, well width and covering layers are optimized to reduce epitaxial layer strain to the minimum. As the emission efficiency and optical gain of the quantum dots are stronger than quantum wells; the capture ability, reflectivity and optical limiting ability of DWELL to electrons are stronger than single-layered quantum dots and multi-quantum dot structure, and the DWELL structure has higher emission efficiency. The intermediate infrared laser of the DWELL structure has both characteristics of the traditional quantum well and a quantum dot laser, and the carrier in DWELL has higher composite efficiency, thus the laser structure can work under higher temperature.
TL;DR: The title compounds were prepared from mixtures of LnSb (Ln: La, Sm, Gd, Ho) and Ln2O3 in a 1:1 molar ratio for Ln3SbO3 and Sb in a 8:8:1 ratio for ln8Sb3O8 (Ta tubes, 1300-1600 °C, 2-6 h).
Abstract: The title compounds are prepared from mixtures of LnSb (Ln: La, Sm, Gd, Ho) and Ln2O3 in a 1:1 molar ratio for Ln3SbO3, and LnSb, Ln2O3, and Sb in a 8:8:1 ratio for Ln8Sb3O8 (Ta tubes, 1300—1600 °C, 2—6 h).
13 Mar 2009
TL;DR: In this paper, the authors used molecular beam epitaxy (MBE) to create epitaxial metal-semiconductor structures containing embedded metallic nanoparticles, including erbium arsenide (ErAs), InOaAs and GaSb structures.
Abstract: : In this program we used molecular beam epitaxy (MBE) to create epitaxial metal-semiconductor structures containing embedded metallic nanoparticles, metallic epitaxial films and epitaxial metal-semiconductor junctions. We incorporated epitaxial metallic nanoparticles of erbium arsenide and erbium antimonide in GaAs, InOaAs and GaSb structures by molecular beam epitaxy. The metallic nanoparticles in semiconductors produced: (1) electrical doping of semiconductors, (2) electron/hole recombination enhancement, (3) electron/hole tunnel junction enhancement. (4) thermal conductivity control, (5) microwave rectification improvement and (6) strong electron plasma resonances. Tunnel currents of GaAs np junctions were enhanced by up to five orders of magnitude by the embedded nanoparticles. Electron-hole recombination times in a series of ErAs/InGaAs codepositions were reduced to less than 100 femtoseconds. We produced the first epitaxial growth of GdN on GaN. This research thus established a foundation for development of improved artificially structured thermoelectric power generation materials, for new materials for terahertz wave generation and detection and for development of highly conducting contacts for the nitride semiconductors.
Patent•
14 May 2019
TL;DR: In this paper, an antimony current automatic regulating and controlling method for manufacturing a high-performance alkali metal antimonide photoelectric cathode is presented, which is suitable for an alkali and antimony simultaneous evaporation stage.
Abstract: The invention provides an antimony current automatic regulating and controlling method for manufacturing a high-performance alkali metal antimonide photoelectric cathode; the method comprises the following steps of carrying out alkali metal evaporation, antimony evaporation, optical current curve fitting and prediction, optical current curve slope judgment and antimony evaporation current adjustment. The method is suitable for an alkali metal and antimony simultaneous evaporation stage, and firstly, an optical current curve is fitted, and then whether the slope of the optical current curve reaches an expected value or not in the future fixed time range is predicted, and next, whether the actual slope of the optical current curve reaches an expected value or not is judged; if any of the tworeaches the expected value, whether the actual slope of the optical current curve reaches a specified value or not is judged; and finally, antimony evaporation current adjustment is carried out according to the judgment condition, and the process is repeated until the slope of the optical current curve reaches the specified angle and the process is ended. The method can be used for solving the problem that the proportion of alkali metal and antimony is disordered due to the fact that the antimony yield is not controllable in the production process of the alkali metal antimonide photoelectriccathode, and the photoelectric emission performance of the alkali metal antimonide photoelectric cathode is improved.