Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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TL;DR: In this paper, a self-consistent numerical calculation of the electronic structure of field effect transistors where the electric transport channel is a quasi-two-dimensional plan of antimonide doping in a silicon crystal is presented.
22 May 2005
TL;DR: In this paper, the antimonide (AlGaAsSb) semiconductor saturable absorber mirror (SESAM) based on InP and grown by MOVPE achieved self-starting and passive mode locking of an Er:Yb:glass laser at 1535 nm and 61 MHz.
Abstract: We demonstrate the first antimonide (AlGaAsSb) semiconductor saturable absorber mirror (SESAM) based on InP and grown by MOVPE. We achieved self-starting and passive mode locking of an Er:Yb:glass laser at 1535 nm and 61 MHz.
TL;DR: In this article, the structure of a ternary compound, MoSb2S, was identified by single-crystal X-ray diffraction, which was synthesized by heating the elements in stoichiometric ratios in sealed silica tubes at 600−800 °C using small amounts of I2 as a mineralizator.
Abstract: The structure of a new ternary compound, MoSb2S, was identified by single-crystal X-ray diffraction. The title compound was synthesized by heating the elements in stoichiometric ratios in sealed silica tubes at 600−800 °C using small amounts of I2 as a mineralizator. The compound crystallizes in a new structure type in the monoclinic space group C2/m [a = 36.157(3) A, b = 6.3823(5) A, c = 6.5379(5) A, β = 95.093(2)°, Z = 16, R1/wR2 = 0.035/0.059]. Its crystal structure contains CdI2-related layers (MoSbS) and Sb columns, namely a zigzag (cis-trans) chain and an equidistant ladder, both of which are located between the MoSbS layers. The results of thermoelectric measurements and electronic structure calculations indicate metallic properties.
TL;DR: In this article , the effect of radiation defects in specially non-doped and tellurium-, indium, and cadmium antimonide (CAM) crystals before and after high doses of 60Co γ-quanta irradiation was studied on the basis of measurements and analysis of temperature dependences of electrical conductivity.