Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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01 Oct 2021
TL;DR: In this paper, the authors investigated the multiplication characteristics of two multipliers on InP substrates: AlGaAsSb and AlInAsSsb and demonstrated decreases in the excess noise factors by growing the multipliers as ternary superlattices, extremely low hole to electron impact ionization coefficient ratios (k~0.01), and low dark current densities.
Abstract: We have investigated the multiplication characteristics of two multipliers on InP substrates: AlGaAsSb and AlInAsSb. We have demonstrated decreases in the excess noise factors by growing the multipliers as ternary superlattices, extremely low hole to electron impact ionization coefficient ratios (k~0.01), and low dark current densities $(^{\sim}10\mu \mathrm{A}/\text{cm}^{2}$ ) at 300 K.
05 Jun 2006
TL;DR: In this article, the indium antimonide based quantum well field effect transistors with 85 nm physical gate length have been demonstrated, achieving a unity gain cutoff frequency exceeding 300 GHz at an operating voltage of only 0.5 VDS.
Abstract: We have recently demonstrated indium antimonide based quantum well field effect transistors with 85 nm physical gate length. Enhancement mode n-channel InSb quantum well transistors (QWFETs) exhibit unity gain cutoff frequency, exceeding 300 GHz at an operating voltage of only 0.5 V VDS. The InSb quantum well transistors demonstrate 50% higher intrinsic speed, than silicon NMOS transistors while consuming 10 times less active DC power