Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
Papers published on a yearly basis
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TL;DR: In this article, the authors present some of the widely used characterization tools for antimonide based III-V compounds, focusing on characterization of defects that limit device operation and the effect of microstructure on the electro-optical properties of GaSb and GaInAsSb important in devices.
Abstract: This paper presents some of the widely used characterization tools for antimonide based III-V compounds, focusing on characterization of defects that limit device operation. The effect of microstructure on the electro-optical properties of GaSb and GaInAsSb important in devices is emphasized.
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27 Oct 2003TL;DR: In this paper, high performance optically-pumped type-II antimonide laser was demonstrated in the 3-5 micron wavelength range with high power conversion efficiency and good beam quality.
Abstract: This paper demonstrates high performance optically-pumped type-II antimonide lasers. These optically-pumped mid-infrared (mid-IR) lasers based on InAs/InGaSb/InAs type-II quantum wells exhibit exceptionally high power conversion efficiency and good beam quality in the 3-5 micron wavelength range.
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23 Jul 2010TL;DR: In this paper, an antimonide-based heterostructural p-channel HFET epitaxies consisting of an In 0.44 Ga 0.56 Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy.
Abstract: Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In 0.44 Ga 0.56 Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In 0.44 Ga 0.56 Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm2/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.
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09 Oct 2006TL;DR: In this article, the authors describe high-brightness, broad-area mid-IR semiconductor lasers using a commercial solid-source MBE system, configured specifically for antimonide alloy deposition.
Abstract: We describe high-brightness, broad-area mid-IR semiconductor lasers. These devices were fabricated in our laboratory using a commercial solid-source MBE system, configured specifically for antimonide alloy deposition. The laser structures incorporated fourteen type-II quantum wells embedded in thick waveguide/absorber regions composed of In0.2Ga0.8AsySb1-y . Each type-II well is comprised of a ~24 Aring thick In0.4 Ga0.6Sb hole bearing layer, which is sandwiched in between two coupled InAs electron wells; as we vary the InAs thickness from 3 to 30 Aring we tune the laser from 2.5 mum to 9.5 mum