Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Mid-infrared Semiconductor Optoelectronics

Abstract: Part I: Materials and Device Design Considerations- Theory of Mid-Wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies- Bandstructure and High-pressure Measurements- Part II: Lasers- III-Sb-based Type-I QW Diode Lasers- VCSELs Emitting in the 2 - 3 m Wavelength Range- Antimonide Type-II 'W' Lasers- Interface Lasers with Asymmetric Band Offset Confinement- IV-VI Semiconductors for Mid-Infrared Optoelectronic Devices- Mid-infrared Vertical Cavity Surface Emitting Lasers based on the Lead Salt Compounds- Optically Pumped MIR Lasers- Mid-infrared Quantum Cascade Lasers- Part III: Detectors- Mid-infrared Electroluminescence in LEDs Based on InAs and Related Alloys- LED-Photodiode Opto-pairs- QWIP Detectors for the MWIR- Negative Luminescence- Mid-Infrared Quantum Dot Photodetectors- Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors- High-speed Avalanche Photodiodes for the 2-5 m Spectral Range- Part IV: Applications- Infrared Methods for Gas Detection- Mid-infrared Biomedical Applications- The Development of Infrared Countermeasure Technology and Systems- Survey of Thermophotovoltaic (TPV) Devices

InAs/GaSb type-II superlattice infrared detectors: Future prospect

Abstract: Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher op...

Tracking sodium-antimonide phase transformations in sodium-ion anodes; insights from operando pair distribution function analysis and solid-state NMR spectroscopy

Abstract: Operando pair distribution function (PDF) analysis and ex situ 23Na magic-angle spinning solid-state nuclear magnetic resonance (MAS ssNMR) spectroscopy are used to gain insight into the alloying mechanism of high-capacity antimony anodes for sodium-ion batteries. Subtraction of the PDF of crystalline NaxSb phases from the total PDF, an approach constrained by chemical phase information gained from 23Na ssNMR in reference to relevant model compounds, identifies two previously uncharacterized intermediate species formed electrochemically; a-Na3–xSb (x ≈ 0.4–0.5), a structure locally similar to crystalline Na3Sb (c-Na3Sb) but with significant numbers of sodium vacancies and a limited correlation length, and a-Na1.7Sb, a highly amorphous structure featuring some Sb–Sb bonding. The first sodiation breaks down the crystalline antimony to form first a-Na3–xSb and, finally, crystalline Na3Sb. Desodiation results in the formation of an electrode formed of a composite of crystalline and amorphous antimony networks...

Recombination processes in doubly capped antimonide-based quaternary thin films

Abstract: Recombination processes in antimonide-based materials for thermophotovoltaic (TPV) devices have been investigated using a radio-frequency (rf) photoreflectance technique, in which a Nd–YAG pulsed laser is used to excite excess carriers, and the short-pulse response and photoconductivity decay are monitored with an inductively coupled noncontacting rf probe. Both lattice-matched AlGaAsSb and GaSb have been used to double cap InGaAsSb active layers to evaluate bulk lifetime and surface recombination velocity with different active layer thicknesses. With an active layer doping of 2×1017 cm−3, effective bulk lifetimes of 95 ns and surface recombination velocities of 1900 cm/s have been obtained. As the laser intensity is increased the lifetime decreases, which is attributed to radiative recombination under these high-level injection conditions. Similar measurements have been taken on both TPV device structures and starting substrate materials for comparison purposes.

Synthesis and properties of antimonide nanowires

Abstract: Antimonide semiconductors are suitable for low-power electronics and long-wavelength optoelectronic applications. In recent years research on antimonide nanowires has become a rapidly growing field, and nano-materials have promising applications in fundamental physics research, for tunnel field-effect transistors, and long-wavelength detectors. In this review, we give an overview of the field of antimonide nanowires, beginning with a description of the synthesis of these nano-materials. Here we summarize numerous reports on antimonide nanowire growth, with the aim to give an overall picture of the distinctive properties of antimonide nanowire synthesis. Secondly, we review the data on the physical properties and emerging applications for antimonide nanowires, focusing on applications in electronics and optics.