Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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TL;DR: In this article, a review of the current growth techniques (liquid phase epitaxy LPE, chemical vapor deposition CVD or molecular beam epitaxy MBE) for antimony-based devices is presented.
Abstract: Antimony-based semiconducting materials are of great interest to the research and technology development communities for mid- and long-infrared applications. In particular, the antimony-based detector is a key component in advanced high-speed and low-noise optical receiver systems. However, the growth and fabrication of antimony-based detectors face several challenges, of which, the most important is the reduction of surface leakage which severely limits their performance. In this paper, a review of the current growth techniques (liquid phase epitaxy LPE, chemical vapor deposition CVD or molecular beam epitaxy MBE) for antimony-based devices is presented. The metamorphic growth technique is also discussed because it allows a device designer to use any conventional starting wafer and then to subsequently grow layers of arbitrary composition of antimony-containing alloys that allows for changing the detection wavelength of interest. However, since surface leakage severely limits the detector’s performance, then suitable techniques to passivate and neutralize the reactive GaSb-surface, and also to finally encapsulate the detectors are required. This reduction of the leakage currents will lead to detectors having higher detectivity and efficiency. Further, avalanche photodetectors with gain can be designed using antimonide-based materials if the processing steps can be optimized. Therefore, in this paper, we also present an up-to-date review of the available techniques for reducing surface leakage. This includes neutralizing the exposed side-walls using sulfur-passivation and/or by depositing another semiconducting layer using either MBE-regrowth or chemical deposition. Finally, antimony-based detectors are reviewed and their detectivity, zero-bias-resistance-area product and surface resistivity are compared.
27 citations
TL;DR: In this article, an antimonide-based thermophotovoltaic monolithic interconnected module has been fabricated and tested using In 0.1 Ga 0.9 As 0.6 As 0 0.04 Sb 0.92 cell isolation diodes.
26 citations
26 citations
TL;DR: Antimonide-based HEMTs have been fabricated with an InAsSb channel in this article, and the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I.
Abstract: Antimonide-based HEMTs have been fabricated with an InAsSb channel Infra-red photoluminescence measurements at 5 K confirm that the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I These HEMTs with 01 /spl mu/m gate length exhibit decreased output conductance and improved voltage gain At V/sub DS/=06 V, a microwave transconductance of 700 mS/mm and an output conductance of 110 mS/mm were obtained corresponding to a voltage gain of 6
26 citations
TL;DR: In this article, a heterostructure bandgap engineered midwave infrared photodetectors based on type-II InAs/GaSb strained layer superlattices with high operating temperatures have been reported.
26 citations