Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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TL;DR: In this paper, the oxidation process of aluminum antimonide (AlSb) in air is investigated in detail using Rutherford backscattering spectroscopy (RBS) and it is verified that AlSb is extremely liable to be oxidized by slight exposure to air.
Abstract: The oxidation process of aluminum antimonide (AlSb) in air is investigated in detail using Rutherford backscattering spectroscopy (RBS) It is verified that AlSb is extremely liable to be oxidized by slight exposure to air The oxidation is found to be a two-step process: an initial fast step and a subsequent slower one In the initial step, a surface oxide with a thickness of about 150 A is formed after AlSb is exposed to air for only a matter of minutes This oxide gradually thickens in the subsequent step, reaching the AlSb/GaSb interface after exposure for about eighty hours It is also clarified that the oxidized AlSb layer is amorphous and that a partly oxidized region is formed under the amorphous oxidized AlSb layer in a precursory state
23 citations
Patent•
07 Sep 1989TL;DR: In this article, a combination of semiconductor heterojunctions provided a quantum effect device with resonant or enhanced transmission of electrons (or holes) due to tunneling into a quantum well state in the valence (or conduction) band.
Abstract: A novel combination of semiconductor heterojunctions provide a quantum-effect device with resonant or enhanced transmission of electrons (or holes) due to tunneling into a quantum well state in the valence (or conduction) band. A particular heterostructure comprising sequentially grown layers of indium arsenide, aluminum antimonide, gallium antimonide, aluminum antimonide and indium arsenide, permits electrons tunneling from the indium arsenide conduction band through the aluminum antimonide barrier into a sub-band level in the valence band quantum well of the gallium antimonide. This particular embodiment produced a current-voltage characteristic with negative differential resistance and a peak-to-valley current ratio of about 20 at room temperature and 88 at liquid nitrogen temperature. The present invention can be used either as a two-contact device such as a diode or a three-contact device such as a transistor.
23 citations
TL;DR: In this article, a superficially oxidized cesium antimonide photoemitting surfaces were studied by X-ray photoelectron spectroscopy, and the production of Cs2O was not ruled out in this process since its signature at 527.5 eV was masked by an antimony shake-up peak at 5 27 eV.
Abstract: Superficially oxidized cesium antimonide photoemitting surfaces prepared in ultrahigh vacuum were studied by X-ray photoelectron spectroscopy. Oxidation of Cs3Sb to produce a surface with enhanced photosensitivity converts part of the antimony to elemental antimony and part of the cesium to cesium suboxide. The latter is identified on the basis of an O1 s peak at 531.3 eV, characteristic of Cs11O3. The production of Cs2O is not ruled out in this process since its signature at 527.5 eV is masked by an antimony shake-up peak at 527 eV.
23 citations
TL;DR: In this paper, the etch pit density (EPD) was determined by the image analysis method and the variation of EPD along the length and diameter of the ingot as well as with the Mn concentration was studied.
23 citations
TL;DR: In this paper, a ternary diluted magnetic semiconductor (DMS) alloy was newly synthesized with different Mn concentrations (x=0.0048, 0.01,0.05 and 0.14) using Bridgman growth technique.
Abstract: Ga1-x Mnx Sb, a ternary diluted magnetic semiconductor (DMS) alloy was newly synthesised with different Mn concentrations (x=0.0048, 0.01, 0.05 and 0.14) using Bridgman growth technique. The stoichiometry and the composition were verified by the electron probe microanalysis and X-ray diffraction analysis. At room temperature electrical parameters like resistivity, Hall co-efficient, carrier concentration and mobility were determined. The variations of resistivity and Hall co-efficient with temperature were studied and it was found that the alloy was degenerate in nature.
23 citations