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Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


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Journal ArticleDOI
TL;DR: A combined scanning electron microscope, transmission electron microscopy, and scanning tunneling microscopy study of gold-nucleated ternary InAs/InAs(1-x)Sb(x) nanowire heterostructures grown by molecular beam epitaxy finds correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth.
Abstract: III‐V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1 xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1 xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core‐shell structure, with an Sb-rich shell.

115 citations

Journal ArticleDOI
TL;DR: In this article, the electrochemical reactivity of cobalt oxide and antimonide, metallic cobalt and antimony thin films toward lithium was investigated using pulsed laser deposition using a stoichiometric target.

112 citations

Proceedings ArticleDOI
01 Dec 2011
TL;DR: In this article, the authors demonstrate hetero tunnel FET (TFET) with record high drive currents (I ON ) of 190µA/µm and 100 µA/m at V DS = 0.75V and 0.3V, respectively (L G = 150nm).
Abstract: Type II arsenide/antimonide compound semiconductor with highly staggered GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I ON ) of 190µA/µm and 100µA/µm at V DS =0.75V and 0.3V, respectively (L G =150nm). In x Ga 1−x As (x=0.53, 0.7) homo-junction TFETs and GaAs 0.5 Sb 0.5 /In 0.53 Ga 0.47 As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOS-FETs for 300mV logic applications.

111 citations

Journal ArticleDOI
TL;DR: In this paper, the authors performed hybrid density functional calculations for single-layer boron pnictides and showed that these materials exhibit a direct bandgap of 6.1, 1.4, 0.6, and 1.2, respectively.
Abstract: Single-layer materials such as graphene and boron nitride promise alternative routes to electronic devices. Hybrid density functional calculations for single-layer boron pnictides boron nitride (BN), boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) show that these materials exhibit a direct bandgap of 6.1, 1.4, 1.2, and 0.6 eV, respectively, that originates from the energy difference of the pz orbitals of the species and is tunable by strain. The bandgap linearly decreases with strain for BN, while it increases non-linearly for BP, BAs, and BSb. The calculated natural band offsets between the various boron pnictides are all of type I.

106 citations

Journal Article
TL;DR: In this article, the authors performed hybrid density functional calculations for single-layer boron pnictides and showed that these materials exhibit a direct bandgap of 6.1, 1.4, 0.6, and 1.2, respectively.
Abstract: Single-layer materials such as graphene and boron nitride promise alternative routes to electronic devices. Hybrid density functional calculations for single-layer boron pnictides boron nitride (BN), boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) show that these materials exhibit a direct bandgap of 6.1, 1.4, 1.2, and 0.6 eV, respectively, that originates from the energy difference of the pz orbitals of the species and is tunable by strain. The bandgap linearly decreases with strain for BN, while it increases non-linearly for BP, BAs, and BSb. The calculated natural band offsets between the various boron pnictides are all of type I.

100 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836