Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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TL;DR: The triptycen can be prepared in 23 per cent yield starting from the fluorobenzene and anthracene as mentioned in this paper, which is a very high dilution rate.
16 citations
TL;DR: In this paper, two modifications of mixed arsenide/antimonide resonant tunneling structures, in which one of the binary components is replaced by a ternary alloy, were studied.
Abstract: We have studied two modifications of mixed arsenide/antimonide resonant tunneling structures, in which one of the binary components is replaced by a ternary alloy. The first structure is based on an InAs/AlSb/GaSb resonant interband tunneling structure with the GaSb quantum well layer replaced by a GaAs x Sb 1 − x alloy layer. The added As decreases the lattice constant in the well, and the resulting strain can shift the heavy hole subbands below the incoming electron energy. We find that the negative resistance effect can be enhanced by properly adjusting the splitting via the As concentration. A maximum enhancement in the peak-to-valley ratio was obtained with a 10% As concentration in the diodes we fabricated. The second structure is a modification of a conventional InAs/AlSb double barrier structure, in which the AlSb barriers are replaced by Al x Ga 1 − x Sb with x ≈ 0.5. In these structures, the pronounced type II band alignment results in an entirely new type of current vs voltage characteristic exhibiting intrinsic current bistability (double-valued currents for a given voltage) instead of the conventional voltage bistability. Peak-to-valley voltage ratios as high as 1.5 have been observed with current densities in the 10 5 A/cm 2 range.
16 citations
17 May 2006
TL;DR: The addition of small amounts of nitrogen to III-V semiconductors leads to a large degree of band-gap bowing, giving rise to band-gaps smaller than in the associated binary materials as mentioned in this paper.
Abstract: The addition of small amounts of nitrogen to III-V semiconductors leads to a large degree of band-gap bowing, giving rise to band-gaps smaller than in the associated binary materials. The addition of a small percentage of nitrogen to GaSb or InSb is predicted to move their response wavelengths into the long or even very long wavelength IR ranges. We report the growth of GaNxSb1-x by MBE, using an r.f. plasma nitrogen source, examining the influence of plasma power, substrate temperature and growth rate. We demonstrate high structural quality, as determined by x-ray diffraction, and show a reduction in band-gap by over 300meV, compared with GaSb, based on FTIR transmission spectroscopy. We also report initial experiments on the growth of InNxSb1-x and Ga1-yInyNxSb1-x, with a view to extending the response into the long and very long wavelength IR ranges.
16 citations
TL;DR: Optically pumped terahertz lasers based on interband transitions in type-II antimonide heterostructures are proposed and modeled in detail in this article, where the activated nature of the Auger and phonon-assisted mechanisms should provide substantially longer nonradiative lifetimes and higher gains than are attainable with intersubband devices.
Abstract: Optically pumped terahertz lasers based on interband transitions in type-II antimonide heterostructures are proposed and modeled in detail. At cryogenic temperatures, the activated nature of the Auger and phonon-assisted mechanisms should provide substantially longer nonradiative lifetimes and higher gains than are attainable with intersubband devices. For emission at λ=27 μm, pulsed operation is projected up to 60 K, and >25 mW of cw output power is calculated for T=30 K. At T=4 K, lasing is expected out to wavelengths as long as 100 μm.
16 citations
TL;DR: In this paper, the electronic and phonon transport properties of graphene-like boron phosphide (BP), Boron arsenide (BAs), and BSb monolayers were investigated using first-principles calculations combined with the Boltzmann theory.
Abstract: The electronic and phonon transport properties of graphene-like boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers are investigated using first-principles calculations combined with the Boltzmann theory. By considering both the phonon-phonon and electron-phonon scatterings, we demonstrate that the strong bond anharmonicity in the BAs and BSb monolayers can dramatically suppress the phonon relaxation time but hardly affect that of electron. As a consequence, both systems exhibit comparable power factors with that of the BP monolayer but much lower lattice thermal conductivities. Accordingly, a maximum ZT value above 3.0 can be realized in both BAs and BSb monolayers at optimized carrier concentration. Interestingly, very similar p - and n-type thermoelectric performance is observed in the BSb monolayer along the zigzag direction, which is of vital importance in the fabrication of thermoelectric modules with comparable efficiencies.
16 citations