Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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TL;DR: In this article, the first successful application of reactive ion beam etching (RIBE) to the dry etching of bulk InSb and InAs0.15Sb0.85/InSb strained layer superlattices (SLSs) was performed in a load-locked ultrahigh vacuum chamber using an electron cyclotron resonance ion source.
Abstract: We report the first successful application of Cl2 reactive ion beam etching (RIBE) to the dry etching of bulk InSb and InAs0.15Sb0.85/InSb strained‐layer superlattices (SLSs). Etching was performed in a load‐locked ultrahigh vacuum chamber using an electron cyclotron resonance ion source. Etching rates for InSb and InAs0.15Sb0.85/InSb SLS with a 500 eV Cl2 beam at 0.6 mA/cm2 are 280 and 240 nm/min, respectively, compared to 310 nm/min for GaAs. The sputter yield for Cl2 RIBE in this antimonide system is double that obtained by Ar ion milling under identical conditions.
13 citations
TL;DR: In this article, the lasing characteristics of mid-IR type-II "W" structures are found to correlate strongly with the growth conditions and low-temperature photoluminescence properties.
Abstract: The lasing characteristics of mid-IR type-II “W” [InAs/GaInSb/InAs/AlAsSb] structures are found to correlate strongly with the growth conditions and low-temperature photoluminescence (PL) properties. The highest PL intensities and narrowest PL lines are obtained when the wafers are grown at ≈480–510°C with mixed interface bonds. A number of structures grown at a non-optimal lower temperature (≈425°C) nonetheless yielded lower lasing thresholds, lower internal losses, and longer Shockley-Read lifetimes than any grown previously on the present Riber 32P MBE system. All of the laser spectra display regularly-spaced multiple peaks that are consistent with periodic modulation of the cavity loss due to mode-leakage into the GaSb substrate.
13 citations
TL;DR: In this paper, the influence of the material quality on the intensity of the luminescence and on the electrical properties of the detectors is studied and a good correlation between the photodetector currentvoltage (IV) characteristics and the PL intensity is observed.
Abstract: In this study the material quality and optical properties of type II InAs/GaSb superlattices are investigated using transmission and photoluminescence (PL) spectroscopy. The influence of the material quality on the intensity of the luminescence and on the electrical properties of the detectors is studied and a good correlation between the photodetector current-voltage (IV) characteristics and the PL intensity is observed. Studies of the temperature dependence of the PL reveal that Shockley-Read-Hall processes are limiting the minority carrier lifetime in both the mid-IR wavelength and the long-IR wavelength detector material studied. These results demonstrate that PL spectroscopy is a valuable tool for optimization of infrared detectors.
12 citations
TL;DR: In this article, a magnetic structure with a easy axis and two types of uranium sites having different values of the moment was found for both compounds, and the appearance of such a structure was ascribed to a low local symmetry of the U-ion environment and hybridization-mediated two-ion interactions.
Abstract: Experiments using polarized and unpolarized neutrons have been performed on single crystals of and . A magnetic structure with a [001], easy axis and two types of uranium site having different values of the moment was found for both compounds. The values of magnetic moment at these two sites are 2.11 and for bismuthide, and 2.14 and for antimonide. The appearance of such a structure is ascribed to a low local symmetry of the U-ion environment and hybridization-mediated two-ion interactions.
12 citations
TL;DR: In this article, the effect of interface trap density Dit on the dc drive current and transconductance gm was studied in detail using split C-V/G -V, pulsed I-V, and radio-frequency measurements.
Abstract: Antimonide (Sb) quantum-well MOSFETs are demonstrated with an integrated high- κ dielectric (1-nm Al2O3 /10-nm HfO2). The effect of interface trap density Dit on the dc drive current and transconductance gm is studied in detail using split C-V/G -V, pulsed I -V, and radio-frequency measurements. Pulsed I-V measurements show improved on current, transconductance, and subthreshold slope due to reduced charge trapping in the dielectric at high frequencies. The long-channel Sb nMOSFET exhibits effective electron mobility of 6000 cm2/V·s at high field (2 × 1012/cm2 of charge density Ns), which is 15× higher than Si NMOS inversion layer mobility, and one of the highest values reported for III-V MOSFETs. The short-channel Sb nMOSFET (LG = 150 nm) exhibits a cutoff frequency fT of 120 GHz, an fT × LG product of 18 GHz·μm , and a source-side injection velocity veff of 2.7 × 107 cm/s at a drain bias VDS of 0.75 V and a gate overdrive of 0.6 V.
12 citations