Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Antimonide-based high-speed electronics: a transistor perspective

Abstract: Antimony containing III-V compounds have long been considered to be promising for high-speed applications at millimeter wave frequencies. Part of their attractiveness comes from the flexibility in heterostructure design afforded by the addition of antimony to arsenic and/or phosphorus containing compounds. A central design feature of antimonide heterostructures is the presence of a staggered "type-II" band line up, and we consider the implications of this special lineup for InAs/AlSb quantum well HFETs, PnP AlSb/InAs/AlSb double heterojunction bipolar transistors (DHBTs), and InP/GaAsSb/InP NpN DHBTs. Whereas Sb- containing heterostructure devices have so far largely maintained the status of laboratory curiosity, recent developments in InP/GaAsSb DHBTs suggest they may break into commercial applications in the very near future.

Stoichiometry-induced roughness on antimonide growth surfaces

Abstract: Phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry. High-resolution scanning tunneling microscopy confirms the interpretation of the phase shift. These results are consistent with a previous structural assignment of the AlSb β(4×3) and α(4×3) surface reconstructions and provide guidelines for producing smooth interfaces in antimonide-based heterostructures.

Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl

Abstract: The antimonide laser heterostructures growth technology using MBE epitaxy is currently well-developed, while MOVPE method is still being improved. It is known that the principal problem for MOVPE is the oxygen and carbon contamination of aluminium containing waveguides and claddings. The solution would be to apply a proper aluminium precursor. In this study we present the results of metal-organic epitaxy of In- and Al-containing layers and quantum well structures composing antimonide lasers devices. Special emphasis was put on the aluminium precursor and its relation to AlGaSb and AlGaAsSb materials properties. The crystalline quality of the layers grown with two different Al precursors was compared, very good structural quality films were obtained. The results suggested a substantial influence of precursors pre-reactions on the epitaxial process. The oxygen contamination was measured by SIMS, which confirmed its dependence on the precursor choice. We also optimised the GaSb substrate thermal treatment to deposit high quality GaSb homoepitaxial layers. Quaternary InGaAsSb layers were obtained even within the predicted miscibility gap, when arsenic content reached high above 10% values. InGa(As)Sb/AlGa(As)Sb quantum wells were grown and their optical properties were characterised by photoluminescence and photoreflectance spectroscopy. Type-I quantum wells showed a fundamental optical transition in the 1.9–2.1 μm range at room temperature. The epitaxial technology of the structures was subjected to an optimisation procedure. The investigated layers and heterostructures can be considered for application in laser devices.

Performance enhancement in a novel amalgamation of arsenide/antimonide tunneling interface with charge plasma junctionless-TFET

Abstract: In this article, a novel combination of an arsenide/antimonide tunneling interface using binary (InAs) and ternary (AlGaSb) compound semiconducting materials and junctionless tunnel field effect transistor (JLFET) has been explored to induce a charge-plasma based tunable bandgap source/channel (S/C) interface. The hetero-material JLTFET (H-JLTFET) depicts superior performance than conventional homo-material Si JLTFET in terms of DC characteristics showing ~128 and ~1.27 × 108 times higher ION and ION/IOFF along with ~10−6 times, ~50%, and 88% lower IOFF, Vth, and SS. The superior performance is attributed to the conduction band local minimum induced at the channel yielding to narrower tunneling barrier width at an optimized Al-mole fraction (0.15) of AlGaSb. Furthermore, 77 times higher gm of H-JLTFET led to 5 × 106 and 205 times higher device efficiency and fT along with ~66% reduction in the parasitic capacitance making it favorable for high-speed switching applications as compared to Si JLTFET.