scispace - formally typeset
Search or ask a question
Topic

Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


Papers
More filters
01 Jan 2006
TL;DR: In this paper, an antimonide-based compound semiconductor (ABCS) microstrip MMIC, an X-band low-noise amplifier and an rf switch, using 0.1µm gate length ABCS metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 µm GaAs substrate.
Abstract: Keywords—low noise amplifier, antimonide-based compound semiconductor (ABCS) HEMT, InAs/AlSb HEMT. Abstract—Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-µm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 µm GaAs substrate. The compact 0.7 mm 2 two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain of 22.3 dB. The measured dc power dissipation of the ABCS LNA was an ultra-low 1.6mW per stage, or 3.2 mW total which is less than one-tenth the dc power dissipation of a typical equivalent InGaAs/AlGaAs/GaAs HEMT LNA. Operation with degraded gain and noise figure at 0.98 mW total dc power dissipation is also verified. The compact 0.9 mm 2 single- pole double-throw X-band RF switch demonstrated a 0.99 dB on-state insertion loss and an off -state isolation of > 32 dB. These results demonstrate the outstanding potential of the ABCS HEMT technology for low-power X-band applications. Fig. 1. A photomicrograph of the two-stage ABCS HEMT MMIC X-band LNA. The compact die measures 1.4mm by 0.7 mm with a thickness of 50 µm.

9 citations

Journal ArticleDOI
TL;DR: In this article, CxKySb photocathodes were manufactured on a niobium substrate and evaluated over a range of temperatures from 300 to 77 K. Measurements of the photocathode spectral response provided a means to evaluate the photocpathode band gap dependence on the temperature and to predict the photoconductor quantum efficiency at 4 K, a typical temperature at which superconducting radio frequency photoguns operate.
Abstract: CsxKySb photocathodes were manufactured on a niobium substrate and evaluated over a range of temperatures from 300 to 77 K. Vacuum conditions were identified that minimize surface contamination due to gas adsorption when samples were cooled below room temperature. Measurements of the photocathode spectral response provided a means to evaluate the photocathode band gap dependence on the temperature and to predict the photocathode quantum efficiency at 4 K, a typical temperature at which superconducting radio frequency photoguns operate.

9 citations

Journal ArticleDOI
Luca Cultrera1, Colwyn Gulliford1, Adam Bartnik1, Hyeri Lee1, Ivan Bazarov1 
TL;DR: In this article, a bi-alkali Rb-K-Sb photocathode has been installed in a high voltage DC gun at Cornell University and the intrinsic electron beam emittance was measured at different photon energies.
Abstract: High quantum efficiency alkali antimonide photocathodes have been grown over both stainless steel and glass substrates using sequential evaporation of Sb, K, Rb, and Cs. Quantum efficiencies well above 25% have been measured at 400 nm. A bi-alkali Rb-K-Sb photocathode grown on a stainless steel substrate has been installed in a high voltage DC gun at Cornell University and the intrinsic electron beam emittance was measured at different photon energies.

9 citations

Journal ArticleDOI
TL;DR: The quaternary compounds EuMnPnF (Pn = P, As, Sb) have been prepared via solid state route at 1173 K, and their crystal and electronic structures as well as magnetic and transport properties have been elucidated.

9 citations

Journal ArticleDOI
TL;DR: In this article, a gas detection setup of side wall corrugated distributed feed-back antimonide diode laser emitting at 2.28 and 2.67 µm was presented.
Abstract: We report on the modeling, growth, processing, characterization and integration in a gas detection setup of side wall corrugated distributed feed-back antimonide diode lasers emitting at 2.28 and 2.67 μm. The laser structures were grown by molecular beam epitaxy on GaSb substrate. Ridge lasers were fabricated from the grown wafers according to the following process: a second order Bragg grating was defined on the sides of the ridges by interferometric lithography, optical lithography and etched in a Cl-based inductively coupled plasma reactor. The devices exhibit a power reaching 40 mW, a side mode suppression ratio better than 28 dB and a tuning range of 3 nm at room temperature. One of these devices was successfully integrated in a tunable diode laser absorption spectroscopy setup, thus demonstrating that they are suitable for gas analysis.

9 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
84% related
Band gap
86.8K papers, 2.2M citations
84% related
Thin film
275.5K papers, 4.5M citations
83% related
Oxide
213.4K papers, 3.6M citations
82% related
Raman spectroscopy
122.6K papers, 2.8M citations
81% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836