Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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TL;DR: In this paper, the structure of a ternary compound, MoSb2S, was identified by single-crystal X-ray diffraction, which was synthesized by heating the elements in stoichiometric ratios in sealed silica tubes at 600−800 °C using small amounts of I2 as a mineralizator.
Abstract: The structure of a new ternary compound, MoSb2S, was identified by single-crystal X-ray diffraction. The title compound was synthesized by heating the elements in stoichiometric ratios in sealed silica tubes at 600−800 °C using small amounts of I2 as a mineralizator. The compound crystallizes in a new structure type in the monoclinic space group C2/m [a = 36.157(3) A, b = 6.3823(5) A, c = 6.5379(5) A, β = 95.093(2)°, Z = 16, R1/wR2 = 0.035/0.059]. Its crystal structure contains CdI2-related layers (MoSbS) and Sb columns, namely a zigzag (cis-trans) chain and an equidistant ladder, both of which are located between the MoSbS layers. The results of thermoelectric measurements and electronic structure calculations indicate metallic properties.
8 citations
01 May 1979
TL;DR: In this paper, the authors used comparative characterization techniques for identically processed low and one gravity samples of commercially available aluminum antimonide (AlSb) and reported on gravitational influences such as density driven convection or sedimentation, that cause microscopic phase separation and nonequilibrium conditions to exist in earth-based melts of AlSb.
Abstract: Although the III-V compound aluminum antimonide (AlSb) shows promise as a highly efficient solar cell material, its semiconducting properties have not been exploited for device development due to difficulties in synthesizing a homogeneous stoichiometric compound and growing single crystals by conventional techniques. Liquid-state homogenization analysis, which examines the relative influence of gravitational flowvs interatomic diffusion, suggested that the microscopic inhomogeneities observed in commercial polycrystalline samples could be due to gravitational influences caused by large density differences between Al- and Sb-rich phases in earth based melts. Several liquid-state homogenization and solidification experiments performed on earth and a similar experiment performed during the Apollo-Soyuz Test Project mission in July 1975 verify this theoretical conclusion. Using comparative characterization techniques for identically processed low and one gravity samples of commercially available AlSb, this paper reports on gravitational influences, such as density driven convection or sedimentation, that cause microscopic phase separation and nonequilibrium conditions to exist in earth based melts of AlSb. The reported experiments have, likewise, shown that such phase separations can be greatly reduced in a low gravity environment and lead to major improvements in microscopic homogeneity of the re crystallized material.
8 citations
TL;DR: In this article, a mesa diode was used as a terahertz mixer with a cutoff frequency of 6.5THz and a capacitance of 1.2fF∕μm2 for a 5μm diameter diode.
Abstract: Antimonide-based p+N junctions have been grown by molecular beam epitaxy and processed into diodes. The diodes have good rectification with ideality factors near 1, and high saturation current densities of 2.5×10−2A∕cm2. S-parameter measurements to 50GHz indicate a 1Ω series resistance and a capacitance of 1.2fF∕μm2 for a 5μm diameter mesa diode. A cutoff frequency of 6.5THz is estimated from the RC product. The high saturation current indicates that this diode will reach forward bias currents at substantially lower voltages than GaAs Schottky diodes. These properties suggest using the diode as a terahertz mixer.
8 citations
TL;DR: In this paper, the authors studied the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its type-II broken band alignment and inverted band structure.
Abstract: We study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its type-II broken band alignment and inverted band structure. Under constant optical excitation, the majority charge carrier type switches from electron to hole. Within the majority charge carrier type transition, the coexisting minority charge carrier contribution indicates electron-hole hybridization with a nontrivial topological insulating phase. The optical tuning is attributed to the negative photoconductivity of antimonide materials in combination with a persistent charge carrier buildup of photogenerated charges at the surface and substrate side of the device, respectively. Our study of the tuning of an InAs/GaSb double quantum well heterostructure reveals that an electro-optical switching is possible and paves the way to an optical control of the phase diagram of InAs/GaSb topological insulators.
8 citations
Patent•
17 Nov 2000
TL;DR: In this article, the problem of providing a thermoelectric material having a high Z value as well as being excellent in temperature stability is addressed. But the problem is not addressed in this paper.
Abstract: PROBLEM TO BE SOLVED: To provide a thermoelectric material having a high Z value as well as being excellent in temperature stability. SOLUTION: Related to a thermal converter comprising a p-doped or an n-doped semiconductor material, the semiconductor material is at least one kind of ternary material formed by combining at least two kinds of compounds among material substance classes, while selected among them; silicide, boride, germanide, telluride, sulfide, selenide, antimonide, lead compound, and semiconductor oxide.
8 citations