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Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


Papers
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Journal ArticleDOI
TL;DR: The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step, resulting in high material quality nanowires.
Abstract: We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.

7 citations

Proceedings ArticleDOI
22 Jan 2010
TL;DR: In this article, a Type II InAs/GaSb superlattice mid-infrared photon detector was demonstrated with a noise equivalent temperature of 10mK at 77k and a detectivity of 3x10 13 cm.
Abstract: Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ~4.2 m cut-off devices exhibit a differential reP sistance area product in excess of the measurement system limit (10 6 Ohm.cm 2 ) and a detectivity of 3x10 13 cm.Hz 1/2 /W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of 10mK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron. Keywords: Type II superlattice, InAs/GaS b, M-structure, photodetector s, MWIR, focal plane arrays. INTRODUCTION: TYPE II ANTIMONIDE BASED SUPERLATTICES

7 citations

Journal ArticleDOI
TL;DR: In this paper, the chemical bonding in CdSb and the synthesis of Csb-based materials for novel optical, thermoelectric, and other devices are discussed.
Abstract: Data are presented on the chemical bonding in CdSb and the synthesis of CdSb-based materials for novel optical, thermoelectric, and other devices.

7 citations

Journal ArticleDOI
TL;DR: In this paper, anion incorporation was controlled during the epitaxial growth process to develop InAs/GaInSb superlattice (SL) materials for very long wavelength infrared applications.

7 citations

Patent
29 Dec 2010
TL;DR: In this article, a doping molybdenum antimonide-based thermoelectric material and the preparation method, which is characterized in that the invention adopts arc melting and discharging plasma rapid sintering method for combination.
Abstract: The invention relates to a doping molybdenum antimonide-based thermoelectric material and the preparation method, which is characterized in that the invention adopts arc melting and discharging plasma rapid sintering method for combination. The preparation method which is provided by the invention is the arc melting and the discharging plasma rapid sintering; Sb and Te/Se are firstly melted to form Sb2Te3Sb2Se3 and then are treated with the arc melting with the stoichiometric ratio of Mo and Sb; finally, the discharging plasma rapid sintering technology is introduced for preparing a dense single-phase material. The invention provides the rapid, simple and effective preparation method of the molybdenum antimonide-based thermoelectric material, which has good practical prospect.

7 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836