Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Structure of multialkali antimonide photocathodes studied by X-ray photoelectron spectroscopy

Abstract: From a comparison of the relative intensities of photoelectrons with different escape depths for Na, K, Cs, and Sb in several multialkali antimonide photocathodes covering a range of high photosensitivities, a model of the structure of these surfaces can be given. In particular, the results indicate for Na2KSb(Cs), the S-20, a surface layer consisting of K2CsSb and NaK2Sb approximately 30 AA thick over a base layer of Na2KSb.

Improved InAs/AlSb/GaSb heterostructures for quantum cascade laser application

Abstract: We describe some key growth issues for Mid-Infrared electroluminescent devices based on a quantum-cascade design using InAs/AlSb heterostructures grown on GaSb substrates. Structural and optical properties of antimonide/arsenide interfaces are first investigated on InAs/AlSb multiple quantum well samples with different types of Sb-like interfaces and various InAs thicknesses. We show that X-ray reflectometry is a powerful complementary tool to High Resolution X-ray Diffraction (HRXRD) to extract both individual layer thicknesses and interface roughnesses using only electronic densities as input parameters. The good structural quality of samples is evidenced by the persistence of sharp high order satellite peaks on HRXRD spectra. The associated optical properties are studied by photo-induced intersubband absorption. Strong E 12 p- polarized intersubband absorptions are observed with a full- width-at-half-maximum (FWHM) around 12 meV at 77 K showing good material quality. Absorption peak positions are compared to theoretical simulations based on a 2 X 9-band k.p calculation. These results allow us to properly design and fabricate InAs/AlSb quantum cascade light emitting devices in the 3 - 5 micrometers wavelength window taking into account the growth constraints. Well-resolved Mid-Infrared (3.7 - 5.3 micrometers ) electroluminescence peaks are observed up to 300 K with FWHM to emission energy ratio ((Delta) E/E) around 8%.

Gain and threshold current density characteristics of 2-μm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset

Abstract: Compressively strained 2 micrometer GaInAsSb quantum well lasers with large valence band offsets and broadened waveguides display a record characteristic temperature, T 0 equals 140 degrees Kelvin for a 4-QW laser and a differential efficiency of 0.74 for a pulsed 2-QW device. The T 0 of these antimonide lasers is 65% more than that reported for phosphide-based lasers operating at 2 micrometer wavelength. A room-temperature threshold current density as low as 173 A/cm 2 has been observed for a 2-QW device and 225 A/cm 2 for the 4-QW laser.

Compound semiconductor multilayer thin film and semiconductor device

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which is very reliable and has a high mobility and a high resistance over a wide range of temperature by forming a strained aluminum.gallium.indium antimonide carrier supply layer which is doped with impurities and whose lattice constant in the direction horizontal with the surface of a substrate is the same as that of InSb. SOLUTION: On a substrate 01 made of semi-insulating or insulating material whose electrical conductivity per unit area is 0.005 S (siemens) or below, a doped InSb buffer layer 02 and an undoped InSb active layer 03 are formed. Then, a strained aluminum.gallium.indium antimonide(AlGaInSb) carrier supply layer 04 which is doped with impurities and whose lattice constant in the direction horizontal with the surface of the substrate 01 is the same as that of InSb is formed. Thereon, an undoped InSb supply layer is formed.