Topic
Antimonide
About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.
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03 Apr 2008TL;DR: In this paper, an optical storage structure is proposed comprising a substrate equipped with physical marks whose geometrical configuration defines the recorded information, a superposition of three layers on top of the substrate marks, and a transparent protective layer, the superposition comprising a layer of indium or gallium antimonide inserted between two ZnS/SiO 2 dielectric layers.
Abstract: The invention relates to the field of optical information recording. According to the invention, an optical storage structure is proposed comprising a substrate equipped with physical marks whose geometrical configuration defines the recorded information, a superposition of three layers on top of the substrate marks, and a transparent protective layer on top of this superposition, the superposition comprising a layer of indium or gallium antimonide inserted between two ZnS/SiO 2 dielectric layers. The antimonide layer has a polycrystalline structure with an average crystal grain size between 5 and 50 nanometers. The non-linear behavior of the superposition of three layers under the read laser makes it possible to read information having a size below the theoretical resolution of the reading system.
7 citations
TL;DR: In this article, the influence of several process parameters such as substrate temperature and reactor geometry on the quality of the resulting GaSb material films is discussed, and a specifically designed HV-MOCVD reactor is built, which can be used for the deposition of GaSB material films.
Abstract: Tailor-made single source precursors of the type [R2GaSbR′2]x (R, R′ = alkyl) have been prepared by a novel synthetic pathways. According to their very low vapor pressures, a specifically designed HV-MOCVD reactor was built, which can be used for the deposition of GaSb material films. The influence of several process parameters such as substrate temperature and reactor geometry on the quality of the resulting films will be discussed.
6 citations
TL;DR: In this article, the mass spectrum of doubly charged ions, M22+, from liquid-metal ion sources (LMISs) is observed and a strong dependence of Sb22+ intensity upon the source matrix is found.
Abstract: Emission of doubly charged ions, M22+, from liquid-metal ion sources (LMISs) is observed The Sb22+ peak is confirmed in the mass spectrum of ions emitted from LMIS using gold antimonide (Au-Sb) alloy The Sb22+ intensity is about 18% of the (Sb++Sb22+) intensity after isotope correction and accounts for approximately 3% of total emission intensities at a total ion current of 20 µA The Sb22+ ions emitted from platinum antimonide (Pt-Sb) LMIS, on the other hand, have only several tenths of 1% of the (Sb++Sb22+) intensity A strong dependence of Sb22+ intensity upon the source matrix is found
6 citations
12 Jun 2012
TL;DR: In this article, the authors have demonstrated that Sb NMOS exhibits effective electron mobility of 6,000 cm2/Vs at high field (2 × 1012 /cm2 of charge density (N s )), which is the highest reported value for any III-V MOSFET.
Abstract: Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-к dielectric (1nmAl 2 O 3 –10nm HfO 2 ). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm2/Vs at high field (2 × 1012 /cm2 of charge density (N s )), which is the highest reported value for any III–V MOSFET. The short channel Sb NMOSFET (L G = 150nm) exhibits a cut-off frequency (f T ) of 120GHz, f T - L G product of 18GHz.µm and source side injection velocity (v eff ) of 2.7×107 cm/s, at drain bias (V DS ) of 0.75V and gate overdrive of 0.6V. The measured f T and f T × L G are 2 x higher, and v eff is 4x higher than Si NMOS (1.0–1.2V V DD ) at similar L G , and are the highest for any III–V MOSFET.
6 citations
TL;DR: In this article, the authors discuss the new achievements in the field of infrared devices based on antimony compounds and highlight the recent advance of III-V antimonide structures, which have stronger chemical bonds and are more attractive than II-VI compounds provided that the same range of bandgaps can be covered.
Abstract: Publisher Summary This chapter discusses the new achievements in the field of infrared devices based on antimony compounds. On comparison with other materials systems highlights the recent advance of III–V antimonide structures. The advances have been dramatic in the case of infrared lasers, where improved performance is linked with the suppression of nonradiative Auger recombination by band structure engineering associated with the introduction of thin InAs layers into the devices and associated type II band alignments at the interfaces. The energy band structure can be adjusted by strain and the transition energy can be controlled by varying the thickness of the layer, which may result in better uniformity over a larger area. The III–V materials have stronger chemical bonds and are, therefore, more attractive than II–VI compounds provided that the same range of bandgaps can be covered. The introduction of epitaxial growth methods has widened the range of material combinations available.
6 citations