Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.

Microscopic description of electronic structure and scattering in disordered antimonide-based heterostructures

Abstract: Quantitative theoretical predictions of the carrier lifetimes in a number of imperfect GaxIn1−xSb–InAs superlattices are presented. Strain-dependent empirical pseudopotentials are used to provide a microscopic description of the stationary states in the structures and scattering theory is employed to extract lifetime information. The effect of interface islands is examined, and lifetimes are found to depend upon the detailed size, shape, and composition of the islands. The effect of higher order multiple scattering events is seen to be significant. For isolated isovalent Sb substitutional defects in the InAs layers, a lifetime of ≈0.4 μs is found to be typical. This is shown to be an order of magnitude shorter than in the case of As defects in the alloy layers.

Optical properties and electronic polarizability of boron-antimonide semiconductor

Abstract: The high-frequency and static dielectric constants, the reflex index, the total optical electronegativity difference, the bulk modulus, the micro-hardness, the plasmon energy and the electronic polarizability of cubic zincblende boron-antimonide semiconductor have been estimated by using some empirical formulas. These parameters are analyzed by comparing them against the available experimental and theoretical data. In general, our obtained results agree well with other theoretical data from the literature.

Chemical Ordering in Bi1–xSbx Nanostructures: Alloy, Janus, or Core–Shell

Abstract: Bismuth antimonide is an important material in nanoelectronics as a topological insulator and thermoelectric material. However, some of its thermal properties are still mostly unknown at the nanosc...

Li2CsSb: A highly-efficient photocathode material

Abstract: The electronic band structure of the alkali antimonide Li2CsSb has been calculated Based on this calculation, estimates are given for the absorption coefficient and the radiative lifetime of the photoelectron The optical generation of photoelectrons in this material proceeds via a direct optical transition, but after relaxation of the photoelectron it is prohibited to recombine with a valence band hole due to the indirect band gap The photoelectron lifetime and the diffusion lengths are compared with other photocathode materials The results suggest that for Li2CsSb the photocathode can be made significantly thicker and therefore more efficient

A Possibility to achieve emission in the mid-infrared wavelength range from semiconductor laser active regions

Abstract: In the present paper the results of the computer analysis of the arsenide-based (GaInNAs/AlGaInAs) and antimonide-based (GaInAsSb/AlGaAsSb) active regions emitting in the mid-infrared wavelength region are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for arsenide-based active region is very low, irrespective of the nitrogen content and compressive strain in GaInNAs. Much higher optical gain in this wavelength range can be obtained for antimonide-based active region, which offers relatively high gain even at 5 μm, when the indium content in GaInAsSb and compressive strain in this layer are higher than 80% and 1.5%, respectively.