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Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


Papers
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Journal ArticleDOI
TL;DR: In this paper, inductively coupled plasma (ICP) etching of GaSb, AlGaAsSb and InGaSb using BCl 3 /Ar plasma discharges was investigated for the fabrication of GaInAssb/AlGaAssSb/InGaAs sb/GaS sb laser diodes.
Abstract: Inductively coupled plasma (ICP) etching of GaSb, AlGaAsSb, and InGaAsSb using BCl 3 /Ar plasma discharges was investigated for the fabrication of GaInAsSb/AlGaAsSb/GaSb laser diodes. Etching rates and selectivity were characterized as functions of gas flow ratio, accelerating voltage, and ICP source power, and the etching mechanism was discussed in detail. It is observed that the etch rate of GaSb and AlGaAsSb is much higher than that of InGaAsSb. The etched surfaces of GaSb, AlGaAsSb all have comparable root-mean-square roughness to the unetched samples over a wide range of plasma conditions; however, it is much rougher in etching of InGaAsSb. The selectivity between GaSb and AlGaAsSb was close to unity over the entire range of plasma conditions investigated, which is desirable for the fabrication of quaternary antimonide laser diodes.

5 citations

Patent
13 Jan 2010
TL;DR: In this article, a method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots, which can realize the research and development of the low-dimension epitaxial growth of antimonide systems is presented.
Abstract: With specific lattice parameters and energy band structure properties, III-V antimonides show more and more important research value and application value in the aspect of near and medium infrared semiconductor devices. The research and development of GaAs-based 1.5mu m Sb-based quantum dot lasers can provide the probability for replacing InP-based material devices, overcome the disadvantages of difficult superintegration among the InP-based materials and poor temperature stability, and provide a novel optical source with low cost, low power consumption and good performance for optical communication. The invention relates to epitaxial growth design and a method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots, which can realize the research and development of the low-dimension epitaxial growth of antimonide systems.

5 citations

Patent
21 Feb 1987
TL;DR: In this article, an aluminum gallium arsenide antimonide (AAsSb) was grown on a GaSb substrate and a 4-element solution of AlGaSb which contained As was matched in grating with the substrate.
Abstract: PURPOSE:To form a crystal having excellent characteristics as a material for a photodiode or an APD by interposing an aluminum gallium arsenide antimonide crystal layer between a gallium antimonide substrate and aluminum gallium antimonide crystal layer and growing it to obtain a crystal having no solute inclusion in a hetero boundary. CONSTITUTION:4-element crystal layer 3 of AlxGa1-xAsySb1-y is grown on a GaSb substrate 1, and an AlxGa1-xSb crystal layer 2 is then grown on the layer 3. When An AlxGa1-xAsySb1-y crystal matched in grating with the substrate is grown on the GaSb substrate from 4-element solution of AlGaAsSb which contains As, since the segregation coefficient of the As is large, solution from a solid-phase side (substrate side) does not occur. Thus, a crystal which does not contain solute inclusion is grown. Then, when an AlxGa1-xSb crystal is grown on 4-element crystal of AlxGa1-xAsySb1-y, the solid-phase side (4-element crystal side) is not unstable. A crystal which does not contain solute inclusion is grown on a substrate boundary on the basis of this action.

5 citations

Journal ArticleDOI
TL;DR: In this article, the lattice dynamics of La-filled skutterudite compounds, LaT 4 X 12 (T = Fe, Ru, and Os, and X = P, As, and Sb), have been investigated from first-principles calculations.
Abstract: Lattice dynamics of La-filled skutterudite compounds, LaT 4 X 12 (T = Fe, Ru, and Os, and X = P, As, and Sb), has been investigated from first-principles calculations. The calculations show that distortions of the cage comprised of 12 pnictogens are important for La vibrations. The distortions decrease the energies of the La vibrations, and become large from the phosphorous compounds to the antimonide compounds. The La vibrations in the antimonide compounds can affect electronic states through the accompanying distortions. Although the La vibrations display no sign of Kohn anomaly, three pnictogen vibrations indicate Kohn anomaly, i.e., they show anomalous decrease of their energies around the wavevector q =(1, 0, 0) in a few compounds. One of the modes is non-degenerate mode, and the other two are degenerate. If the non-degenerate one becomes unstable, the resulting structure has the space group Pm 3 . The structure is the same as the low-temperature structure in PrRu 4 P 12 .

5 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836