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Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


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Journal ArticleDOI
TL;DR: In this article, the effect of heat, electric contact, and cathode surface roughness to emission characterizations is analyzed, and the methods to maintain the high current-density emission and avoid the fatigue of the photocathode are verified.
Abstract: High photocurrent density cathodes that enable small cross-section electron beams are required for high-power terahertz vacuum devices. Multi-alkali antimonide photocathodes may be well suited for generating sub-mm electron beam sources. This paper involves the repeatability, stability, uniformity, and linearity experiments of the multi-alkali antimonide photocathodes electron emission operations under a continuous-wave 450 nm laser with a bias voltage of 5000 V. The effect of heat, electric contact, and cathode surface roughness to emission characterizations is analyzed. The methods to maintain the high-current-density emission and avoid the fatigue of the photocathode are verified. The emission can be repeated with increased optical power. The stable photocurrent density of near 1 A/cm2 and maximum current density of near 1.43 A/cm2 is recorded. The continuous photocurrent density is significantly improved compared to the current density reported in traditional applications. It is found that the current curves measuring at different areas of the photocathode differ greatly after the laser power of 800 mW. The increase in current for some areas may be attributed to the conductive current caused by built-in electric fields between the emission rough area and its adjacent areas.

5 citations

Book ChapterDOI
01 Jan 2010
TL;DR: In this paper, the authors present a comprehensive account of research carried out so far on indium antimonide (InSb), indium bismuth antimonides (InBi x Sb1-x), and indium arsenic antimonite (InAs X Sb 1-x, InAs Sb 2-x) in terms of crystal growth in bulk and epitaxial forms and interesting device feasibility.
Abstract: Materials for the generation and detection of 7–12 μm wavelength radiation continue to be of considerable interest for many applications such as night vision, medical imaging, sensitive pollution gas monitoring, etc. For such applications HgCdTe has been the main material of choice in the past. However, HgCdTe lacks stability and uniformity over a large area, and only works under cryogenic conditions. Because of these problems, antimony-based III–V materials have been considered as alternatives. Consequently, there has been a tremendous growth in research activity on InSb-based systems. In fact, InSb-based compounds have proved to be interesting materials for both basic and applied research. This chapter presents a comprehensive account of research carried out so far. It explores the materials aspects of indium antimonide (InSb), indium bismuth antimonide (InBi x Sb1–x), indium arsenic antimonide (InAs x Sb1–x), and indium bismuth arsenic antimonide (InBi x As y Sb1–x–y) in terms of crystal growth in bulk and epitaxial forms and interesting device feasibility. The limiting single-phase composition of InAs x Sb1–x and InBi x Sb1–x using near-equilibrium technique has been also addressed. An overview of the structural, transport, optical, and device-related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as device applications are discussed. These include the role of defects and impurity on structural, optical, and electrical properties of the materials.

5 citations

Proceedings ArticleDOI
23 Jul 2010
TL;DR: In this article, the Czochralski technique has been used to grow single crystal InSb and GaSb ingots with typical etch pit densities of <1E2 cm−2 and <2E3 cm −2, respectively.
Abstract: In this work we report on the crystal growth and surface characterization of antimonide substrate materials. The Czochralski technique has been used to grow single crystal InSb and GaSb ingots with typical etch pit densities of <1E2 cm−2 and <2E3 cm−2, respectively. X-Ray topographs (XRT) have enabled the high resolution mapping of the defect structure in GaSb substrates, demonstrating that ingots can be produced with large areas of zero dislocation density. Epitaxyready surfaces with very low levels of surface roughness and uniform oxide coverage have been demonstrated for 4” GaSb. We have shown that smaller diameter antimonide ingot and wafer production processes can be scaled to deliver high quality substrates in large diameter form.

5 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836