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Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


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Journal ArticleDOI
01 Nov 1997-Pramana
TL;DR: In this article, the phonon dispersion curves for aluminium arsenide and antimonide have been investigated by using a deformation bond approximation model, and the results obtained from this model are compared with the experimental values wherever it is available.
Abstract: The phonon dispersion curves for aluminium arsenide and antimonide have been investigated by using a deformation bond approximation model. The results obtained from this model are compared with the experimental values wherever it is available. Since there is no complete experimental phonon dispersion curves for AlAs, we could not compare our calculated results, but the results of AlSb have been compared with the inelastic neutron scattering measurements at 15 K. However, we compare the phonon frequencies of AlAs and AlSb at critical points of the Brillouin zone obtained by our calculations and Raman spectroscopy measurements. This model predicts the phonon modes satisfactorily in all the symmetry directions of the Brillouin zone (BZ). The spectrum has similar features as observed in other III–V compound semiconductors.

5 citations

Journal ArticleDOI
TL;DR: In this paper, the energy band gap and lattice constants were obtained even for the unknown compositions by applying interpolation methods, and the peritectic temperatures were found to be 745°C and 715°C for GaAsSb and GaAlAs Sb, respectively.
Abstract: Semiconductor AIII−BV ternary and quaternary antimonides are useful materials for optoelectronic and microelectronic applications. Only a few members of possible combinations were prepared, mostly as epitaxial layers grown onto a binary or ternary AIII−BV compound. The energy band gap and lattice constants can be obtained even for the unknown compositions by applying interpolation methods. In some AIII−BV antimonide systems the presence of a miscibility gap makes the situation very difficult. The phase diagram is unknown in details for many antimonide compounds and these facts throw difficulties in the way of liquid phase epitaxy. Due to limitations imposed by phase relations the growth of device quality layer structures is rather complicated and only the GaAsSb and GaAlAsSb structures have practical applications as light sources and detectors. Both ternary and quaternary systems have a peritectic type phase diagram. The peritectic temperatures (Tp) were found to be 745°C for GaAsSb and 715°C for GaAlAsSb.

5 citations

Journal ArticleDOI
TL;DR: In this paper, (titanium (Ti) + magnesium antimonide (Mg3Sb2)/magnesium composites with Ti contents of 0, 5, 10, and 15% (mass fraction, %) were fabricated by powder metallurgers.
Abstract: In the present research work, (titanium (Ti) + magnesium antimonide (Mg3Sb2)/magnesium (Mg) composites with Ti contents of 0, 5%, 10%, and 15% (mass fraction, %) were fabricated by powder metallurg...

5 citations

Journal ArticleDOI
TL;DR: In this paper, a new passivation method (zinc sulfide coating after anodic fluoride) was proposed for InAs/GaSb superlattice infrared detectors, which can decrease the occurrence of defects with similar pyramidal structure.
Abstract: One of the major challenges of antimonide-based devices arises owing to the large number of surface states generated during fabrication processes. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of this material system. In this paper, we proposed a new passivation method (zinc sulfide coating after anodic fluoride) for InAs/GaSb superlattice infrared detectors. InAs/GaSb superlattice short-wavelength infrared materials were grown by molecular beam epitaxy on GaSb (100) substrates. A GaSb buffer layer, which can decrease the occurrence of defects with similar pyramidal structure, was grown for optimized superlattice growth condition. High resolution X-ray diffraction indicated that the period of the superlattice corresponding to fourth satellite peak was 39.77 A. The atomic force microscopy images show the roughness was below 1.7 nm. The result of photoresponse spectra shows that the cutoff wavelength was 3.05 μm at 300 K.

5 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836