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Antimonide

About: Antimonide is a research topic. Over the lifetime, 972 publications have been published within this topic receiving 10981 citations. The topic is also known as: antimonides.


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Patent
16 Dec 1957

5 citations

Journal ArticleDOI
TL;DR: In this paper, nuclear magnetic resonance signals are observed from nuclei in domains and in domain walls in ferromagnetic manganese antimonide, and the observed broadening of the resonance lines is discussed.
Abstract: Nuclear magnetic resonance signals are observed from nuclei in domains and in domain walls in ferromagnetic manganese antimonide. Internal magnetic fields are measured at the manganese, antimony sites at 77 K and 296 K. The difference in the internal magnetic fields measured at the Sb site using the Sb 123 , Sb 121 resonances respectively could be explained to a hyperfine anomaly 121 Δ 123 =-(0.36±0.05)%. Resonance signals are also observed in Cr x Mn 1- x Sb ( x =0.01, 0.03 and 0.05). The observed broadening of the resonance lines is discussed.

5 citations

Journal ArticleDOI
TL;DR: In this article, the authors reported quantum efficiency enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers.
Abstract: We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 percent, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 percent on average and up to 80 percent at localized hot spot regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.

5 citations

Patent
08 Jul 1975
TL;DR: In this article, the input screen of an X-ray or γ-ray image tube comprises a barrier layer 54 between scintillator 51 and photocathode 55, made of two sub-layers, one 52 of alumina, Al 2 O 3, 50 to 150 angstrom units in thickness, and the other of silicon sesquioxide Si 2 o 3, 200 to 1000 angstrom unit in thickness.
Abstract: The input screen 5 of an X-ray or γ -ray image tube comprises a barrier layer 54 between scintillator 51 and photocathode 55, made of two sub-layers, one 52 of alumina, Al 2 O 3 , 50 to 150 angstrom units in thickness, and the other of silicon sesquioxide Si 2 O 3 , 200 to 1000 angstrom units in thickness. The photocathode is made of an alkaline antimonide and the scintillator of an alkaline halide.

5 citations

Journal ArticleDOI
TL;DR: In this article, the optical and electrical confinement of a GaSb-based quantum well structure have been improved by inserting an aluminium oxide layer obtained by wet oxidation of AlAs in the upper confinement layer.
Abstract: Low-threshold laser emission at room temperature of a GaSb-based quantum well structure is reported in this paper. The optical and electrical confinement of the structure have been improved by inserting an aluminium oxide layer obtained by wet oxidation of AlAs in the upper confinement layer. The strains between the oxide layer and the contiguous layers (GaAs and GaSb) are compensated by an AlAs/GaAs superlattice. The resulting morphology of the oxidized AlAs layers is presented.

5 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202320
202242
202118
202021
201929
201836