Antimony

About: Antimony is a research topic. Over the lifetime, 11450 publications have been published within this topic receiving 155660 citations. The topic is also known as: Sb & element 51.

Chromatography of metal ions with a thioglycolate chelating resin

Abstract: The synthesis and properties of a chelating resin containing a thioglycoloyloxymethyl functional group are described. This resin retains silver(I), bismuth(III), tin(IV), antimony(III), mercury(II), and gold(III) from 0.1 M acid and cadmium(II), lead(II), and uranium(VI) from pH 3.5 solution. On a column containing this resin, separations of several of these metal ions are obtained by elution with acetate and hydrochloric acid eluents. Application to real samples is demonstrated by the successful analysis of NBS samples for antimony, and of acidic brine solutions for traces of mercury(II). 5 figures, 2 tables.

Electrolysis of a molten semiconductor

Abstract: Metals cannot be extracted by electrolysis of transition-metal sulfides because as liquids they are semiconductors, which exhibit high levels of electronic conduction and metal dissolution. Herein by introduction of a distinct secondary electrolyte, we reveal a high-throughput electro-desulfurization process that directly converts semiconducting molten stibnite (Sb2S3) into pure (99.9%) liquid antimony and sulfur vapour. At the bottom of the cell liquid antimony pools beneath cathodically polarized molten stibnite. At the top of the cell sulfur issues from a carbon anode immersed in an immiscible secondary molten salt electrolyte disposed above molten stibnite, thereby blocking electronic shorting across the cell. As opposed to conventional extraction practices, direct sulfide electrolysis completely avoids generation of problematic fugitive emissions (CO2, CO and SO2), significantly reduces energy consumption, increases productivity in a single-step process (lower capital and operating costs) and is broadly applicable to a host of electronically conductive transition-metal chalcogenides.

Silicon self-interstitial supersaturation during phosphorus diffusion

Abstract: The effect of phosphorus introduction and diffusion on the diffusivities of boron, arsenic, and antimony in silicon was studied using arsenic and antimony buried layers in a boron‐doped silicon substrate It was found that the diffusivity of boron and arsenic was enhanced, while that of antimony was retarded directly under the silicon surface exposed to phosphorus Since antimony diffuses primarily via a vacancy mechanism while the other two elements via a combination of vacancy and interstitialcy mechanisms, these results suggest that phosphorus predeposition enhances the silicon self‐interstitial concentration and reduces the concentration of vacancies

Effect of Substrate Temperature on Crystallization of Amorphous Antimony Film

Abstract: A study is made of the crystallization of amorphous antimony film deposited on a glass substrate. The substrate is maintained at a desired temperature between 20°C and 90°C. The crystal growth in the films of thickness 210-550 A is directly observed through an optical microscope. At any substrate temperature Ts the rate of crystal growth v is found to change with the thickness d in accordance with the expression v=v∞(1-dc/d), where dc is the critical thickness for crystallization of the amorphous antimony film and v∞ the rate of crystal growth for bulk antimony. The critical thickness dc decreases with the rise of Ts. The activation energy of atoms for crystallization Q is found to be 0.32 eV for bulk antimony.