Topic
Antimony
About: Antimony is a research topic. Over the lifetime, 11450 publications have been published within this topic receiving 155660 citations. The topic is also known as: Sb & element 51.
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TL;DR: In this paper, an antimony/multilayer graphene hybrid, in which antimony is homogeneously anchored on multilayer graphite, is produced by a confined vapor deposition method.
Abstract: Sodium-ion batteries have recently attracted considerable attention as a promising alternative to lithium-ion batteries owing to the natural abundance and low cost of sodium compared with lithium. Among all proposed anode materials for sodium-ion batteries, antimony is a desirable candidate due to its high theoretical capacity (660 mA h g–1). Herein, an antimony/multilayer graphene hybrid, in which antimony is homogeneously anchored on multilayer graphene, is produced by a confined vapor deposition method. The chemical bonding can realize robust and intimate contact between antimony and multilayer graphene, and the uniform distribution of antimony and the highly conductive and flexible multilayer graphene can not only improve sodium ion diffusion and electronic transport but also stabilize the solid electrolyte interphase upon the large volume changes of antimony during cycling. Consequently, the antimony/multilayer graphene hybrid shows a high reversible sodium storage capacity (452 mA h g–1 at a current...
135 citations
Patent•
13 Mar 2015TL;DR: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source as discussed by the authors, where the reactionant may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides.
Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
134 citations
TL;DR: For some metals, which are important from an occupational as well as an environmental viewpoint, ICP-MS is more sensitive than atomic absorption spectrometry (AAS), and is welcome as a reference method for AAS with the additional advantage of multi-element measurement.
Abstract: Objective: An analytical method has been established to determine the concentration of antimony (Sb), bismuth (Bi), lead (Pb), cadmium (Cd), mercury (Hg), palladium (Pd), platinum (Pt), tellurium (Te), tin (Sn), thallium (Tl) and tungsten (W) in urine. The aim was to develop a method which is equally suitable for the determination of environmentally as well as occupationally caused metal excretion. Methods: Inductively coupled plasma-mass spectroscopy (ICP-MS) was used for the determination of metals. Calibration was done using aqueous solutions and standard addition respectively. Results: Urine samples of 14 persons occupationally non-exposed to metals were analysed. With the exception of Pt and Bi all the metals were found in these urine samples. The detection limits for these metals lie between 5 and 50 ng/l. Conclusions: For some metals, which are important from an occupational as well as an environmental viewpoint, ICP-MS is more sensitive than atomic absorption spectrometry (AAS). ICP-MS, moreover, is welcome as a reference method for AAS with the additional advantage of multi-element measurement.
134 citations
133 citations
TL;DR: In this paper, the authors comprehensively review the growth of III-V antimony-based semiconductor materials using metal-organic chemical vapor deposition (MOCVD) techniques.
Abstract: This article comprehensively reviews the growth of III–V antimony-based semiconductor materials using metal-organic chemical vapor deposition (MOCVD). It does this by first discussing the general trends found for the growth of these materials. Next the specific growth techniques are discussed for each of the antimony-based systems including the binaries InSb, GaSb, and AlSb. The growth techniques used for many of the ternaries and quaternaries of these materials are also discussed. Following this a brief description of the use of dopants, novel organometallic sources and superlattices is presented. Next, the use of common characterization techniques is presented for different types of materials. A variety of the types of devices is then presented followed by a short summary and forecast of future directions that are currently being pursued in these materials.
133 citations