Showing papers on "Atomic layer deposition published in 1986"

Deposition processes for films and coatings

Abstract: Deposition of films and coatings on different substrates is carried out mainly by using physical and chemical vapour deposition (CVD). Various films and coatings of metals, oxides, carbides, nitrides, suicides, borides, etc., are successfully deposited by the CVD process. An update on the deposition process and its applications is discussed in this paper.

Method for producing a semiconductor device using a chemical vapour deposition step

Abstract: A semiconductor device is produced in such a manner that light λ having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film (405) is formed on the substrate (401) in accordance with a chemical vapor deposition method.

A planar multi-level tungsten interconnect technology

Abstract: A novel planar interconnect technology based on selective deposition of W has been developed. The conventional approach to metallization, by depositing, patterning and etching of a metal layer, usually results in many steps on the wafer surface. In the W Interconnect Technology (WIT) to be presented, the interconnects are formed by selective deposition of W into oxide channels. Figure 1 outlines the processing sequence to form a level of metallization. A layer of LPCVD Si02 as thick as the desired W layer is deposited. Subsequently, a Si3N4 layer of 100 nm thick is deposited. The channels for the W interconnects are formed by patterning and etching the composite dielectrics. After the photoresist is removed, Si atoms at 40 KeV are implanted. Typically, a dosage as high as l~lO~’cm-~ is required to initiate the deposition of W. A photoresist mask cannot be used because of potential heating problem. The Si3N4 mask is selectively removed in hot H3PO4 solution. The etch rate of SigNq does not appear to be affected by the Si implant. A W film is then electively deposited to fill the Si02 channels [l], which becomes a level of interconnects. This process is repeated to form vias and subsequent levels of interconnects. This W interconnect technology has many desireable features. First, patterning and etching of a metal layer are no longer required. The wafer surface is completely planar after each level of interconnect or via formation] as shown in Figure 2. Only an initial planarization before the first metal is required for multi-level metallization. The adhesion of W on implanted Si02 is very good, with no lifting observed on lines as long as 1000 um. The improved adhesion, over that of blanket CVD W on Si02, is probably due to the Si implant. The W interconnects exhibit a resistivity of 7 pn-cm, which is similar to reported bulk resistivity [2]. A low contact resistivity between W levels is also achieved.

Plasma CVD: New Ways To Control Thin Film Deposition Processes

Abstract: The plasma deposition process can produce coatings with highly desirable properties, attributable to the ion and neutral chemistry at the surface of the growing film. The ultimate technical success of this technique depends upon the ability to control the reactive species in the plasma, their fluxes, and their energies. Recently, progress has been made in identifying deposition mechanisms and understanding how they can be controlled via the available parameters such as plasma excitation power and frequency, reactor geometry, gas pressure, and flow rates. The need to understand and control the mass transport mechanisms at the growing surface has become very clear, and convincing evidence has been demonstrated that back-etching or "surface scrubbing" can be important. This effect can be used to selectively scavenge undesirable phases in the growing film. The influence of these mechanisms on film properties will be discussed. A brief description will also be given of the properties of different types of films available by this process, and a number of examples will be discussed that show how plasmas have been controlled to achieve desired properties for these films.

Direct-write pyrolytic laser deposition

Abstract: Direct-wire pyrolytic laser deposition is capable of maskless pattern generation of a wide range of materials of interest to the semiconductor device industry. Effects that influence the deposition rate and resolution in direct-write thermal deposition are discussed for metallic film deposition from gas and solid phases.