Showing papers on "Atomic layer deposition published in 1988"

Handbook of thin-film deposition processes and techniques : principles, methods, equipment, and applications

Abstract: Recent Changes in the Semiconductor Industry Deposition Technologies and Applications: Introduction and Overview Silicon Epitaxy by Chemical Vapor Deposition Chemical Vapor Deposition of Silicon Dioxide Films Metal Organic Chemical Vapor Deposition: Technology and Equipment Feature Scale Modeling The Role of Metrology and Inspection in Semiconductor Processing Contamination Control, Defect Detection, and Yield Enhancement in Gigabit Manufacturing Sputtering and Sputter Deposition Laser and Electron Beam Assisted Processing Molecular Beam Epitaxy: Equipment and Practice Ion Beam Deposition Chemical Mechanical Polishing Organic Dielectrics in Multilevel Metalization of Integrated Circuits Performance, Processing, and Lithography Trends Index

Mass selected ion beam deposition: a tool for parametric growth studies, process development and fabrication of diamondlike films

Abstract: Diamondlike films have unique properties that can be tailored between those of diamond and those of graphite to meet industrial applications. The purpose of this review is to emphasize the ability to prepare films with specific properties through control of the deposition parameters. The three basic approaches, plasma deposition, chemical vapor deposition, and ion beam deposition, are presented. Since the first two methods consist of complex chemical-physical systems which limit the possibilities for controlled parametric studies, the focus herein is on the latter technique. This work presents the unique capabilities of mass-selected carbon ion beam deposition in controlling deposition parameters over a wide range, particularly when combined with in-situ analysis of film evolution. The role of different deposition parameters on diamond film growth is discussed. The Houston deposition system that manifests the above features is described. A summary of results of some ongoing experiments is given t...

Laser chemical vapour deposition

Abstract: The special role of lasers in material processing is outlined in this article. In the background of the various chemical vapour deposition processes, the laser-induced chemical vapour deposition processes have been described. The unique aspects of pyrolytic and photolytic laser chemical vapour deposition have been stressed. Some of the recent experimental results on thin film deposition by laser have been reviewed. The problems and future of laser deposition processes have also been mentioned.

Thin Film Deposition Processes

Abstract: Thin film materials pervade our everyday life as transparent conductors in LCD watches and computer displays and in defrosters for automobiles... antireflection coatings for camera lenses… optical fibers for communication … architectural glass coatings for both color and energy efficiency… solar cells… decorative coatings on plastics such as for toys and automobiles parts… a whole host of electronic and optoelectronic devices… hard coatings for cutting tools, drill bits, and bearings … even metallic coatings inside potato chip bags to keep the chips crisp!Without thin films our lifestyles would be drastically different. And this trend toward increased use of thin film technology will only continue.The varied reasons for using thin films and the specific deposition processes for preparing them are often complex; but usually relate to function, cost, beauty, materials and energy efficiency, and performance. In addition to technological applications, scientists are finding thin films to be an invaluable tool for investigating new physical phenomena, even at the quantum level. For instance, two of the most important new materials—high temperature ceramic superconductors and diamond coatings — are currently being made by several thin film deposition processes in order to explore both their scientific and technological potential.Just 25 years ago the variety of deposition processes for preparing thin films was quite limited. Thin film scientists and technologists had at their disposal electrodeposition, elementary chemical vapor deposition, evaporation, and dc sputtering. Commercial equipment for electron-beam evaporation, a mainstay in the optical coatings industry, was just being developed. Most of the deposition processes reviewed in this and next month's MRS BULLETIN were either not commercially available or were not even conceived of then.

A bipolar structure with semi-dielectric device isolation by selective epitaxial growth

Abstract: A bipolar structure with an estimated f/sub T/ of 5 GHz was fabricated on a selective epitaxial layer. A shallow buried layer (0.25 mu m approximately 0.50 mu m) was formed by diffusing arsenic atoms from an arsenic-implanted polysilicon layer. The polysilicon layer was removed by converting it to oxide and etching the oxide. The defective regions at the edges of the selective epitaxial layer were removed by a plasma etch step to form defect-free base-collector junctions; the junctions can be placed less than 2 mu m from the edges without degrading the device characteristics. Using the selective epitaxial growth, LOCOS isolation and the shallow buried layer, semi-dielectric transistor isolation was achieved. >

Silicon Molecular Beam Epitaxy : Status ; Devices ; Trends

Abstract: The single crystal growth, by molecular beam epitaxy, of materials compatible with silicon heterojunction devices are fabricated, strained layer Si/Ge superlattices are investigated, and sillicon based monolithic integration of heterojunction devices and conventional devices is suggested.

New development in CVD tungsten technology for multilevel interconnection

Abstract: A newly developed low-temperature silane-reduced selective tungsten deposition process is described, which is suitable for applications in VLSI multilevel interconnection. The most important advances in the selective deposition process are the lowered deposition temperature and increased deposition rate. With the addition of silane, the deposition temperature has been lowered to below 300 degrees C from 450 to 550 degrees C for the conventional two-step process involving Si reduction followed by hydrogen reduction. At the same time, the deposition rate has been increased by a factor of five to ten depending on the optical density of the exposed area. Other benefits of the low-temperature process include absence of leakage currents caused by tunneling and encroachment, and much enhanced selectivity. The frequency of cleaning the deposition system has also been reduced because of reduced deposition temperature. Significantly improved electrical properties have been obtained on various devices. >

Stacked capacitor DRAM process using photo-CVD Ta/sub 2/O/sub 5/ film

Abstract: Stacked-capacitor DRAM (dynamic random-access memory) cells were fabricated using a high dielectric insulator, tantalum pentoxide (Ta/sub 2/O/sub 5/), which was formed at lower temperature by photo-CVD (chemical vapor deposition) and subsequent photo-oxygen annealing, obtaining a film with low-leakage current and step coverage good enough for a 3-D DRAM cell of more than 16-Mb class. Capitalizing on these features, a novel process for a stacked-capacitor (WSi/sub 2//Ta/sub 2/O/sub 5//WSi/sub 2/) DRAM was developed. In this process, the capacitor is fabricated after the transistor. Since the maximum temperature needed in the capacitor fabrication is 300 degrees C, and is lower than that of the conventional process after contact formation (440 degrees C), the characteristics of the transistor under the capacitor is not affected in this process. This process is compatible with the conventional one, and higher integration is realized without major layout change. >

High field conduction in poly-p-xylylene thin film

Abstract: Poly-p-xylylene (PPX) films prepared by thermal chemical vapor deposition showed a negative temperature dependence of high-field current, dJ/dT >

Laser-Induced Chemical Vapor Deposition of Ge-Se Thin Films

Abstract: The synthesis of Ge-Se deposits has been demonstrated by using continuous wave CO2 laser excited reactions of GeC14 and Se2Cl2 precursors, each transported in an argon carrier gas. The deposited Ge-Se layers are rich in Ge with a composition of 70% of Ge and 30% of Se. Microstructural examinations reveal that the microstructure consists of amorphous Ge-Se particles ranging in diameter from 2000 A to 7000 A. Suggestions are made for the possible mechanisms that might occur during film deposition including, pyrolytic reactions, multiphoton dissociations, and Volmer-Weker film growth.